NL7313366A - - Google Patents

Info

Publication number
NL7313366A
NL7313366A NL7313366A NL7313366A NL7313366A NL 7313366 A NL7313366 A NL 7313366A NL 7313366 A NL7313366 A NL 7313366A NL 7313366 A NL7313366 A NL 7313366A NL 7313366 A NL7313366 A NL 7313366A
Authority
NL
Netherlands
Application number
NL7313366A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7313366A publication Critical patent/NL7313366A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402Field plates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • H01L23/3171Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/585Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60Protection against electrostatic charges or discharges, e.g. Faraday shields
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Thyristors (AREA)
NL7313366A 1972-10-04 1973-09-27 NL7313366A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47099060A JPS5218070B2 (de) 1972-10-04 1972-10-04

Publications (1)

Publication Number Publication Date
NL7313366A true NL7313366A (de) 1974-04-08

Family

ID=14237161

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7313366A NL7313366A (de) 1972-10-04 1973-09-27

Country Status (6)

Country Link
US (1) US4000507A (de)
JP (1) JPS5218070B2 (de)
DE (1) DE2349938A1 (de)
FR (1) FR2202367B1 (de)
GB (1) GB1444823A (de)
NL (1) NL7313366A (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5181667U (de) * 1974-12-23 1976-06-30
DE2603747A1 (de) * 1976-01-31 1977-08-04 Licentia Gmbh Integrierte schaltungsanordnung
US4047196A (en) * 1976-08-24 1977-09-06 Rca Corporation High voltage semiconductor device having a novel edge contour
JPS5347096U (de) * 1976-09-24 1978-04-21
JPS53103756U (de) * 1977-01-26 1978-08-21
JPS54149469A (en) * 1978-05-16 1979-11-22 Toshiba Corp Semiconductor device
GB2047461A (en) * 1979-04-19 1980-11-26 Philips Electronic Associated Semiconductor device
GB2080616A (en) * 1980-07-21 1982-02-03 Siliconix Inc Power semiconductor devices
DE3137914A1 (de) * 1981-09-23 1983-04-07 Siemens AG, 1000 Berlin und 8000 München Anordnung zur kompensation von korrosionseffekten inintegrierten halbleiterschaltkreisen
JPS5987316A (ja) * 1982-11-10 1984-05-19 Kawaguchiko Seimitsu Kk デジタル測定器
US5164813A (en) * 1988-06-24 1992-11-17 Unitrode Corporation New diode structure
DE19517975B4 (de) * 1994-07-12 2007-02-08 International Rectifier Corp., El Segundo CMOS-Schaltungsplättchen mit Polysilizium-Feldringstruktur

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA941074A (en) * 1964-04-16 1974-01-29 Northern Electric Company Limited Semiconductor devices with field electrodes
DE1920397A1 (de) * 1969-04-22 1970-11-12 Siemens Ag Stabilisiertes Halbleiterbauelement
GB1260618A (en) * 1969-08-09 1972-01-19 Soc Gen Semiconduttori Spa Planar junctions with integrated resistor, for high voltages
US3713908A (en) * 1970-05-15 1973-01-30 Ibm Method of fabricating lateral transistors and complementary transistors

Also Published As

Publication number Publication date
JPS5218070B2 (de) 1977-05-19
US4000507A (en) 1976-12-28
FR2202367A1 (de) 1974-05-03
FR2202367B1 (de) 1977-09-09
GB1444823A (en) 1976-08-04
DE2349938A1 (de) 1974-04-25
JPS4958769A (de) 1974-06-07

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