NL7313366A - - Google Patents
Info
- Publication number
- NL7313366A NL7313366A NL7313366A NL7313366A NL7313366A NL 7313366 A NL7313366 A NL 7313366A NL 7313366 A NL7313366 A NL 7313366A NL 7313366 A NL7313366 A NL 7313366A NL 7313366 A NL7313366 A NL 7313366A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP47099060A JPS5218070B2 (de) | 1972-10-04 | 1972-10-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL7313366A true NL7313366A (de) | 1974-04-08 |
Family
ID=14237161
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7313366A NL7313366A (de) | 1972-10-04 | 1973-09-27 |
Country Status (6)
Country | Link |
---|---|
US (1) | US4000507A (de) |
JP (1) | JPS5218070B2 (de) |
DE (1) | DE2349938A1 (de) |
FR (1) | FR2202367B1 (de) |
GB (1) | GB1444823A (de) |
NL (1) | NL7313366A (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5181667U (de) * | 1974-12-23 | 1976-06-30 | ||
DE2603747A1 (de) * | 1976-01-31 | 1977-08-04 | Licentia Gmbh | Integrierte schaltungsanordnung |
US4047196A (en) * | 1976-08-24 | 1977-09-06 | Rca Corporation | High voltage semiconductor device having a novel edge contour |
JPS5347096U (de) * | 1976-09-24 | 1978-04-21 | ||
JPS53103756U (de) * | 1977-01-26 | 1978-08-21 | ||
JPS54149469A (en) * | 1978-05-16 | 1979-11-22 | Toshiba Corp | Semiconductor device |
GB2047461A (en) * | 1979-04-19 | 1980-11-26 | Philips Electronic Associated | Semiconductor device |
GB2080616A (en) * | 1980-07-21 | 1982-02-03 | Siliconix Inc | Power semiconductor devices |
DE3137914A1 (de) * | 1981-09-23 | 1983-04-07 | Siemens AG, 1000 Berlin und 8000 München | Anordnung zur kompensation von korrosionseffekten inintegrierten halbleiterschaltkreisen |
JPS5987316A (ja) * | 1982-11-10 | 1984-05-19 | Kawaguchiko Seimitsu Kk | デジタル測定器 |
US5164813A (en) * | 1988-06-24 | 1992-11-17 | Unitrode Corporation | New diode structure |
DE19517975B4 (de) * | 1994-07-12 | 2007-02-08 | International Rectifier Corp., El Segundo | CMOS-Schaltungsplättchen mit Polysilizium-Feldringstruktur |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA941074A (en) * | 1964-04-16 | 1974-01-29 | Northern Electric Company Limited | Semiconductor devices with field electrodes |
DE1920397A1 (de) * | 1969-04-22 | 1970-11-12 | Siemens Ag | Stabilisiertes Halbleiterbauelement |
GB1260618A (en) * | 1969-08-09 | 1972-01-19 | Soc Gen Semiconduttori Spa | Planar junctions with integrated resistor, for high voltages |
US3713908A (en) * | 1970-05-15 | 1973-01-30 | Ibm | Method of fabricating lateral transistors and complementary transistors |
-
1972
- 1972-10-04 JP JP47099060A patent/JPS5218070B2/ja not_active Expired
-
1973
- 1973-09-27 NL NL7313366A patent/NL7313366A/xx unknown
- 1973-10-01 GB GB4582373A patent/GB1444823A/en not_active Expired
- 1973-10-02 FR FR7335129A patent/FR2202367B1/fr not_active Expired
- 1973-10-04 DE DE19732349938 patent/DE2349938A1/de active Pending
-
1975
- 1975-01-20 US US05/542,301 patent/US4000507A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS5218070B2 (de) | 1977-05-19 |
US4000507A (en) | 1976-12-28 |
FR2202367A1 (de) | 1974-05-03 |
FR2202367B1 (de) | 1977-09-09 |
GB1444823A (en) | 1976-08-04 |
DE2349938A1 (de) | 1974-04-25 |
JPS4958769A (de) | 1974-06-07 |