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US3896765A
(en)
*
|
1971-10-06 |
1975-07-29 |
Matsushita Electric Industrial Co Ltd |
Apparatus for liquid-phase epitaxial growth
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JPS5318151B2
(en:Method)
*
|
1971-12-14 |
1978-06-13 |
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US3767481A
(en)
*
|
1972-04-07 |
1973-10-23 |
Rca Corp |
Method for epitaxially growing layers of a semiconductor material from the liquid phase
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JPS5342230B2
(en:Method)
*
|
1972-10-19 |
1978-11-09 |
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US3859148A
(en)
*
|
1972-12-01 |
1975-01-07 |
Bell Telephone Labor Inc |
Epitaxial crystal growth of group iii-v compound semiconductors from solution
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JPS49102652U
(en:Method)
*
|
1972-12-22 |
1974-09-04 |
|
|
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US3762367A
(en)
*
|
1973-01-12 |
1973-10-02 |
Handotai Kenkyu Shinkokai |
Growth apparatus for a liquid growth multi-layer film
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JPS5320193B2
(en:Method)
*
|
1973-01-25 |
1978-06-24 |
|
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JPS49131678A
(en:Method)
*
|
1973-04-21 |
1974-12-17 |
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US3853643A
(en)
*
|
1973-06-18 |
1974-12-10 |
Bell Telephone Labor Inc |
Epitaxial growth of group iii-v semiconductors from solution
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FR2319268A1
(fr)
*
|
1973-07-03 |
1977-02-18 |
Radiotechnique Compelec |
Diode electroluminescente protegee
|
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JPS5418905B2
(en:Method)
*
|
1973-10-24 |
1979-07-11 |
|
|
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JPS5120081A
(en)
*
|
1974-08-12 |
1976-02-17 |
Hitachi Ltd |
Ketsushoseichohoho oyobi sochi
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JPS5515316Y2
(en:Method)
*
|
1975-10-09 |
1980-04-09 |
|
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JPS5252570A
(en)
*
|
1975-10-27 |
1977-04-27 |
Hitachi Ltd |
Device for production of compound semiconductor
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JPS55163835A
(en)
*
|
1979-06-06 |
1980-12-20 |
Toshiba Corp |
Selective liquid phase growth of on semiconductor region
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NL185375C
(nl)
*
|
1980-01-16 |
1990-03-16 |
Philips Nv |
Inrichting voor het epitaxiaal aanbrengen van een laag halfgeleidermateriaal.
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FR2481325A1
(fr)
*
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1980-04-23 |
1981-10-30 |
Radiotechnique Compelec |
Nacelle utilisable pour des depots epitaxiques multicouches en phase liquide et procede de depot mettant en jeu ladite nacelle
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US4317689A
(en)
*
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1980-07-18 |
1982-03-02 |
Honeywell Inc. |
Mercury containment for liquid phase growth of mercury cadmium telluride from tellurium-rich solution
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US4470368A
(en)
*
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1982-03-10 |
1984-09-11 |
At&T Bell Laboratories |
LPE Apparatus with improved thermal geometry
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US4574730A
(en)
*
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1984-02-27 |
1986-03-11 |
Northern Telecom Limited |
Melt dispensing liquid phase epitaxy boat
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US4547230A
(en)
*
|
1984-07-30 |
1985-10-15 |
The United States Of America As Represented By The Secretary Of The Air Force |
LPE Semiconductor material transfer method
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JPH0634956B2
(ja)
*
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1987-08-06 |
1994-05-11 |
セントラル硝子株式会社 |
薄膜のコ−ティング方法およびその装置
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IT1231384B
(it)
*
|
1988-08-26 |
1991-12-02 |
Central Glass Co Ltd |
Procedimento e dispositivo per rivestire la superficie di una piastra con una pellicola sottile di liquido.
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US5223079A
(en)
*
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1991-03-18 |
1993-06-29 |
Motorola, Inc. |
Forming thin liquid phase epitaxial layers
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US20100102419A1
(en)
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2008-10-28 |
2010-04-29 |
Eric Ting-Shan Pan |
Epitaxy-Level Packaging (ELP) System
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US8193078B2
(en)
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2008-10-28 |
2012-06-05 |
Athenaeum, Llc |
Method of integrating epitaxial film onto assembly substrate
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US7905197B2
(en)
*
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2008-10-28 |
2011-03-15 |
Athenaeum, Llc |
Apparatus for making epitaxial film
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US8746283B2
(en)
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2011-10-03 |
2014-06-10 |
Aquasana, Inc. |
Faucet diverter valves
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