NL7205410A - - Google Patents
Info
- Publication number
- NL7205410A NL7205410A NL7205410A NL7205410A NL7205410A NL 7205410 A NL7205410 A NL 7205410A NL 7205410 A NL7205410 A NL 7205410A NL 7205410 A NL7205410 A NL 7205410A NL 7205410 A NL7205410 A NL 7205410A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1066—Gate region of field-effect devices with PN junction gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP46028405A JPS526076B1 (de) | 1971-04-28 | 1971-04-28 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NL7205410A true NL7205410A (de) | 1972-10-31 |
| NL180266B NL180266B (nl) | 1986-08-18 |
| NL180266C NL180266C (nl) | 1987-01-16 |
Family
ID=12247739
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NLAANVRAGE7205410,A NL180266C (nl) | 1971-04-28 | 1972-04-21 | Halfgeleiderinrichting, omvattende een halfgeleiderlichaam met een toevoergebied en een afvoergebied dat met het toevoergebied is verbonden met ten minste een kanaalgebied, dat wordt begrensd door een stuurgebied met het aan het geleidingstype van het toevoer-, het afvoer- en het kanaalgebied tegengestelde geleidingstype. |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4337473A (de) |
| JP (1) | JPS526076B1 (de) |
| DE (1) | DE2220789A1 (de) |
| GB (1) | GB1393792A (de) |
| NL (1) | NL180266C (de) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5557119A (en) * | 1971-04-28 | 1996-09-17 | Handotai Kenkyu Shinkokai | Field effect transistor having unsaturated drain current characteristic |
| NL191525C (nl) * | 1977-02-02 | 1995-08-21 | Shinkokai Zaidan Hojin Handot | Halfgeleiderinrichting omvattende een stroomkanaalgebied van een eerste geleidingstype dat wordt omsloten door een van een stuurelektrode voorzien stuurgebied van het tweede geleidingstype. |
| DE2858820C2 (de) * | 1977-02-02 | 1996-09-19 | Zaidan Hojin Handotai Kenkyu | I·2·L-Schaltungsstruktur |
| JPS5425175A (en) * | 1977-07-27 | 1979-02-24 | Nippon Gakki Seizo Kk | Integrated circuit device |
| US4364072A (en) * | 1978-03-17 | 1982-12-14 | Zaidan Hojin Handotai Kenkyu Shinkokai | Static induction type semiconductor device with multiple doped layers for potential modification |
| US4546375A (en) * | 1982-06-24 | 1985-10-08 | Rca Corporation | Vertical IGFET with internal gate and method for making same |
| JPS5940576A (ja) * | 1982-08-30 | 1984-03-06 | Junichi Nishizawa | フオトサイリスタ |
| JPS5941877A (ja) * | 1982-08-31 | 1984-03-08 | Junichi Nishizawa | フオトトランジスタ |
| JPS61121369A (ja) * | 1984-11-19 | 1986-06-09 | Fujitsu Ltd | 半導体装置 |
| JPS62105478A (ja) * | 1985-11-01 | 1987-05-15 | 新技術開発事業団 | 半導体装置 |
| WO1995007548A1 (de) * | 1993-09-08 | 1995-03-16 | Siemens Aktiengesellschaft | Strombegrenzer |
| JPH07297409A (ja) * | 1994-03-02 | 1995-11-10 | Toyota Motor Corp | 電界効果型半導体装置 |
| DE10338689B4 (de) * | 2003-08-22 | 2007-03-29 | Infineon Technologies Ag | Widerstandsbauelement und Verfahren zu dessen Abgleich |
| US8193046B2 (en) | 2009-11-02 | 2012-06-05 | Analog Devices, Inc. | Junction field effect transistor |
| US8390039B2 (en) * | 2009-11-02 | 2013-03-05 | Analog Devices, Inc. | Junction field effect transistor |
| US8462477B2 (en) | 2010-09-13 | 2013-06-11 | Analog Devices, Inc. | Junction field effect transistor for voltage protection |
| CN106449745B (zh) * | 2016-09-23 | 2024-01-12 | 兰州大学 | 基于沟道隐埋层的电流可控型静电感应晶体管 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL96818C (de) * | 1952-03-14 | |||
| US3126505A (en) * | 1959-11-18 | 1964-03-24 | Field effect transistor having grain boundary therein | |
| JPS5217720B1 (de) * | 1971-07-31 | 1977-05-17 |
-
1971
- 1971-04-28 JP JP46028405A patent/JPS526076B1/ja active Pending
-
1972
- 1972-04-21 NL NLAANVRAGE7205410,A patent/NL180266C/xx not_active IP Right Cessation
- 1972-04-27 GB GB1961972A patent/GB1393792A/en not_active Expired
- 1972-04-27 DE DE19722220789 patent/DE2220789A1/de not_active Ceased
-
1977
- 1977-07-19 US US05/817,052 patent/US4337473A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| GB1393792A (en) | 1975-05-14 |
| NL180266B (nl) | 1986-08-18 |
| JPS526076B1 (de) | 1977-02-18 |
| US4337473A (en) | 1982-06-29 |
| DE2220789A1 (de) | 1972-11-16 |
| NL180266C (nl) | 1987-01-16 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A85 | Still pending on 85-01-01 | ||
| V4 | Discontinued because of reaching the maximum lifetime of a patent |