NL7202027A - - Google Patents
Info
- Publication number
- NL7202027A NL7202027A NL7202027A NL7202027A NL7202027A NL 7202027 A NL7202027 A NL 7202027A NL 7202027 A NL7202027 A NL 7202027A NL 7202027 A NL7202027 A NL 7202027A NL 7202027 A NL7202027 A NL 7202027A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H10W20/20—
-
- H10P95/00—
-
- H10W10/011—
-
- H10W10/0125—
-
- H10W10/10—
-
- H10W10/13—
-
- H10W20/031—
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/117—Oxidation, selective
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/151—Simultaneous diffusion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/981—Utilizing varying dielectric thickness
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US115428A US3921282A (en) | 1971-02-16 | 1971-02-16 | Insulated gate field effect transistor circuits and their method of fabrication |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7202027A true NL7202027A (OSRAM) | 1972-08-18 |
Family
ID=22361342
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7202027A NL7202027A (OSRAM) | 1971-02-16 | 1972-02-16 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3921282A (OSRAM) |
| DE (1) | DE2207264A1 (OSRAM) |
| FR (1) | FR2125462B1 (OSRAM) |
| NL (1) | NL7202027A (OSRAM) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS598065B2 (ja) * | 1976-01-30 | 1984-02-22 | 松下電子工業株式会社 | Ｍｏｓ集積回路の製造方法 |
| DE2760086C2 (OSRAM) * | 1976-07-26 | 1988-02-18 | Hitachi, Ltd., Tokio/Tokyo, Jp | |
| US4151020A (en) * | 1977-01-26 | 1979-04-24 | Texas Instruments Incorporated | High density N-channel silicon gate read only memory |
| US4102733A (en) * | 1977-04-29 | 1978-07-25 | International Business Machines Corporation | Two and three mask process for IGFET fabrication |
| IT1097967B (it) * | 1977-07-18 | 1985-08-31 | Mostek Corp | Procedimnto e struttura per l'incrocio di segnali di informazione in un dispositivo a circuito integrato |
| US4221044A (en) * | 1978-06-06 | 1980-09-09 | Rockwell International Corporation | Self-alignment of gate contacts at local or remote sites |
| US4192059A (en) * | 1978-06-06 | 1980-03-11 | Rockwell International Corporation | Process for and structure of high density VLSI circuits, having inherently self-aligned gates and contacts for FET devices and conducting lines |
| US4280271A (en) * | 1979-10-11 | 1981-07-28 | Texas Instruments Incorporated | Three level interconnect process for manufacture of integrated circuit devices |
| JPS60116167A (ja) * | 1983-11-29 | 1985-06-22 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
| JPH0644593B2 (ja) * | 1984-11-09 | 1994-06-08 | 株式会社東芝 | 半導体集積回路装置 |
| US4966864A (en) * | 1989-03-27 | 1990-10-30 | Motorola, Inc. | Contact structure and method |
| US5298792A (en) * | 1992-02-03 | 1994-03-29 | Micron Technology, Inc. | Integrated circuit device with bi-level contact landing pads |
| US5391510A (en) * | 1992-02-28 | 1995-02-21 | International Business Machines Corporation | Formation of self-aligned metal gate FETs using a benignant removable gate material during high temperature steps |
| KR100191347B1 (ko) * | 1996-08-09 | 1999-06-15 | 윤종용 | 반도체 공정의 주사전자현미경 관리용 미세선폭 관리시료 |
| US6362527B1 (en) * | 1996-11-21 | 2002-03-26 | Advanced Micro Devices, Inc. | Borderless vias on bottom metal |
| KR100446300B1 (ko) * | 2002-05-30 | 2004-08-30 | 삼성전자주식회사 | 반도체 소자의 금속 배선 형성 방법 |
| US20080070405A1 (en) * | 2002-05-30 | 2008-03-20 | Park Jae-Hwa | Methods of forming metal wiring layers for semiconductor devices |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1001908A (en) * | 1962-08-31 | 1965-08-18 | Texas Instruments Inc | Semiconductor devices |
| US3436611A (en) * | 1965-01-25 | 1969-04-01 | Texas Instruments Inc | Insulation structure for crossover leads in integrated circuitry |
| DE1614928A1 (de) * | 1966-07-19 | 1970-12-23 | Solitron Devices | Verfahren zur Kontaktierung von Halbleiter-Bauelementen |
| US3676921A (en) * | 1967-06-08 | 1972-07-18 | Philips Corp | Semiconductor device comprising an insulated gate field effect transistor and method of manufacturing the same |
| US3535775A (en) * | 1967-12-18 | 1970-10-27 | Gen Electric | Formation of small semiconductor structures |
| US3519901A (en) * | 1968-01-29 | 1970-07-07 | Texas Instruments Inc | Bi-layer insulation structure including polycrystalline semiconductor material for integrated circuit isolation |
| US3576478A (en) * | 1969-07-22 | 1971-04-27 | Philco Ford Corp | Igfet comprising n-type silicon substrate, silicon oxide gate insulator and p-type polycrystalline silicon gate electrode |
-
1971
- 1971-02-16 US US115428A patent/US3921282A/en not_active Expired - Lifetime
-
1972
- 1972-02-15 FR FR7204948A patent/FR2125462B1/fr not_active Expired
- 1972-02-16 DE DE19722207264 patent/DE2207264A1/de active Pending
- 1972-02-16 NL NL7202027A patent/NL7202027A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US3921282A (en) | 1975-11-25 |
| FR2125462A1 (OSRAM) | 1972-09-29 |
| FR2125462B1 (OSRAM) | 1977-12-23 |
| DE2207264A1 (de) | 1972-08-31 |