FR2125462B1 - - Google Patents
Info
- Publication number
- FR2125462B1 FR2125462B1 FR7204948A FR7204948A FR2125462B1 FR 2125462 B1 FR2125462 B1 FR 2125462B1 FR 7204948 A FR7204948 A FR 7204948A FR 7204948 A FR7204948 A FR 7204948A FR 2125462 B1 FR2125462 B1 FR 2125462B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/117—Oxidation, selective
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/151—Simultaneous diffusion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/981—Utilizing varying dielectric thickness
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US115428A US3921282A (en) | 1971-02-16 | 1971-02-16 | Insulated gate field effect transistor circuits and their method of fabrication |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2125462A1 FR2125462A1 (fr) | 1972-09-29 |
FR2125462B1 true FR2125462B1 (fr) | 1977-12-23 |
Family
ID=22361342
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7204948A Expired FR2125462B1 (fr) | 1971-02-16 | 1972-02-15 |
Country Status (4)
Country | Link |
---|---|
US (1) | US3921282A (fr) |
DE (1) | DE2207264A1 (fr) |
FR (1) | FR2125462B1 (fr) |
NL (1) | NL7202027A (fr) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS598065B2 (ja) * | 1976-01-30 | 1984-02-22 | 松下電子工業株式会社 | Mos集積回路の製造方法 |
DE2733514A1 (de) * | 1976-07-26 | 1978-02-09 | Hitachi Ltd | Halbleiter-vorrichtungen |
US4151020A (en) * | 1977-01-26 | 1979-04-24 | Texas Instruments Incorporated | High density N-channel silicon gate read only memory |
US4102733A (en) * | 1977-04-29 | 1978-07-25 | International Business Machines Corporation | Two and three mask process for IGFET fabrication |
IT1097967B (it) * | 1977-07-18 | 1985-08-31 | Mostek Corp | Procedimnto e struttura per l'incrocio di segnali di informazione in un dispositivo a circuito integrato |
US4192059A (en) * | 1978-06-06 | 1980-03-11 | Rockwell International Corporation | Process for and structure of high density VLSI circuits, having inherently self-aligned gates and contacts for FET devices and conducting lines |
US4221044A (en) * | 1978-06-06 | 1980-09-09 | Rockwell International Corporation | Self-alignment of gate contacts at local or remote sites |
US4280271A (en) * | 1979-10-11 | 1981-07-28 | Texas Instruments Incorporated | Three level interconnect process for manufacture of integrated circuit devices |
JPS60116167A (ja) * | 1983-11-29 | 1985-06-22 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
JPH0644593B2 (ja) * | 1984-11-09 | 1994-06-08 | 株式会社東芝 | 半導体集積回路装置 |
US4966864A (en) * | 1989-03-27 | 1990-10-30 | Motorola, Inc. | Contact structure and method |
US5298792A (en) * | 1992-02-03 | 1994-03-29 | Micron Technology, Inc. | Integrated circuit device with bi-level contact landing pads |
US5391510A (en) * | 1992-02-28 | 1995-02-21 | International Business Machines Corporation | Formation of self-aligned metal gate FETs using a benignant removable gate material during high temperature steps |
KR100191347B1 (ko) * | 1996-08-09 | 1999-06-15 | 윤종용 | 반도체 공정의 주사전자현미경 관리용 미세선폭 관리시료 |
US6362527B1 (en) * | 1996-11-21 | 2002-03-26 | Advanced Micro Devices, Inc. | Borderless vias on bottom metal |
KR100446300B1 (ko) * | 2002-05-30 | 2004-08-30 | 삼성전자주식회사 | 반도체 소자의 금속 배선 형성 방법 |
US20080070405A1 (en) * | 2002-05-30 | 2008-03-20 | Park Jae-Hwa | Methods of forming metal wiring layers for semiconductor devices |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1001908A (en) * | 1962-08-31 | 1965-08-18 | Texas Instruments Inc | Semiconductor devices |
US3436611A (en) * | 1965-01-25 | 1969-04-01 | Texas Instruments Inc | Insulation structure for crossover leads in integrated circuitry |
DE1614928A1 (de) * | 1966-07-19 | 1970-12-23 | Solitron Devices | Verfahren zur Kontaktierung von Halbleiter-Bauelementen |
US3676921A (en) * | 1967-06-08 | 1972-07-18 | Philips Corp | Semiconductor device comprising an insulated gate field effect transistor and method of manufacturing the same |
US3535775A (en) * | 1967-12-18 | 1970-10-27 | Gen Electric | Formation of small semiconductor structures |
US3519901A (en) * | 1968-01-29 | 1970-07-07 | Texas Instruments Inc | Bi-layer insulation structure including polycrystalline semiconductor material for integrated circuit isolation |
US3576478A (en) * | 1969-07-22 | 1971-04-27 | Philco Ford Corp | Igfet comprising n-type silicon substrate, silicon oxide gate insulator and p-type polycrystalline silicon gate electrode |
-
1971
- 1971-02-16 US US115428A patent/US3921282A/en not_active Expired - Lifetime
-
1972
- 1972-02-15 FR FR7204948A patent/FR2125462B1/fr not_active Expired
- 1972-02-16 NL NL7202027A patent/NL7202027A/xx unknown
- 1972-02-16 DE DE19722207264 patent/DE2207264A1/de active Pending
Also Published As
Publication number | Publication date |
---|---|
FR2125462A1 (fr) | 1972-09-29 |
DE2207264A1 (de) | 1972-08-31 |
NL7202027A (fr) | 1972-08-18 |
US3921282A (en) | 1975-11-25 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |