NL7117975A - - Google Patents

Info

Publication number
NL7117975A
NL7117975A NL7117975A NL7117975A NL7117975A NL 7117975 A NL7117975 A NL 7117975A NL 7117975 A NL7117975 A NL 7117975A NL 7117975 A NL7117975 A NL 7117975A NL 7117975 A NL7117975 A NL 7117975A
Authority
NL
Netherlands
Application number
NL7117975A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7117975A publication Critical patent/NL7117975A/xx

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/0788—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type comprising combinations of diodes or capacitors or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/136—Resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
NL7117975A 1970-12-28 1971-12-28 NL7117975A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10188570A 1970-12-28 1970-12-28

Publications (1)

Publication Number Publication Date
NL7117975A true NL7117975A (xx) 1972-06-30

Family

ID=22286966

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7117975A NL7117975A (xx) 1970-12-28 1971-12-28

Country Status (3)

Country Link
US (1) US3667009A (xx)
DE (2) DE7148143U (xx)
NL (1) NL7117975A (xx)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3964941A (en) * 1971-06-21 1976-06-22 Motorola, Inc. Method of making isolated complementary monolithic insulated gate field effect transistors
JPS4982257A (xx) * 1972-12-12 1974-08-08
JPS49105490A (xx) * 1973-02-07 1974-10-05
JPS5739058B2 (xx) * 1973-05-07 1982-08-19
US4033797A (en) * 1973-05-21 1977-07-05 Hughes Aircraft Company Method of manufacturing a complementary metal-insulation-semiconductor circuit
US4015147A (en) * 1974-06-26 1977-03-29 International Business Machines Corporation Low power transmission line terminator
US3967295A (en) * 1975-04-03 1976-06-29 Rca Corporation Input transient protection for integrated circuit element
US3999205A (en) * 1975-04-03 1976-12-21 Rca Corporation Rectifier structure for a semiconductor integrated circuit device
US4051504A (en) * 1975-10-14 1977-09-27 General Motors Corporation Ion implanted zener diode
US4099998A (en) * 1975-11-03 1978-07-11 General Electric Company Method of making zener diodes with selectively variable breakdown voltages
US4602267A (en) * 1981-02-17 1986-07-22 Fujitsu Limited Protection element for semiconductor device
JPS5944862A (ja) * 1982-09-07 1984-03-13 Toshiba Corp 半導体装置
US4626882A (en) * 1984-07-18 1986-12-02 International Business Machines Corporation Twin diode overvoltage protection structure
US4757363A (en) * 1984-09-14 1988-07-12 Harris Corporation ESD protection network for IGFET circuits with SCR prevention guard rings
US4739437A (en) * 1986-10-22 1988-04-19 Siemens-Pacesetter, Inc. Pacemaker output switch protection
JPH01194349A (ja) * 1988-01-29 1989-08-04 Toshiba Corp 半導体装置
US4890143A (en) * 1988-07-28 1989-12-26 General Electric Company Protective clamp for MOS gated devices
US5138413A (en) * 1990-10-22 1992-08-11 Harris Corporation Piso electrostatic discharge protection device
US5272097A (en) * 1992-04-07 1993-12-21 Philip Shiota Method for fabricating diodes for electrostatic discharge protection and voltage references
US5591661A (en) * 1992-04-07 1997-01-07 Shiota; Philip Method for fabricating devices for electrostatic discharge protection and voltage references, and the resulting structures
KR960015900A (ko) * 1994-10-06 1996-05-22 반도체 장치 및 그 제조방법
US5563525A (en) * 1995-02-13 1996-10-08 Taiwan Semiconductor Manufacturing Company Ltd ESD protection device with FET circuit
US5897348A (en) * 1998-03-13 1999-04-27 Texas Instruments - Acer Incorporated Low mask count self-aligned silicided CMOS transistors with a high electrostatic discharge resistance
US6753580B1 (en) * 2000-05-05 2004-06-22 International Rectifier Corporation Diode with weak anode
EP1267397A1 (en) * 2001-06-11 2002-12-18 Infineon Technologies SC300 GmbH & Co. KG Semiconductor device with self-aligned contact and method for manufacturing said device
JP5990986B2 (ja) 2012-04-10 2016-09-14 三菱電機株式会社 保護ダイオード

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3244949A (en) * 1962-03-16 1966-04-05 Fairchild Camera Instr Co Voltage regulator
CH439499A (fr) * 1965-04-07 1967-07-15 Centre Electron Horloger Résistance semiconductrice et procédé pour sa fabrication
US3551760A (en) * 1966-03-28 1970-12-29 Hitachi Ltd Semiconductor device with an inversion preventing layer formed in a diffused region
US3450961A (en) * 1966-05-26 1969-06-17 Westinghouse Electric Corp Semiconductor devices with a region having portions of differing depth and concentration

Also Published As

Publication number Publication date
DE7148143U (de) 1972-07-06
DE2163596A1 (de) 1972-08-17
US3667009A (en) 1972-05-30

Similar Documents

Publication Publication Date Title
AR204384A1 (xx)
ATA96471A (xx)
AU2044470A (xx)
AU1146470A (xx)
AU1473870A (xx)
AU1326870A (xx)
AU2085370A (xx)
AU1336970A (xx)
AU2017870A (xx)
AU1833270A (xx)
AU1716970A (xx)
AU1517670A (xx)
AR195465A1 (xx)
AU1591370A (xx)
AU1872870A (xx)
AU2131570A (xx)
AU1277070A (xx)
AU1343870A (xx)
AU1247570A (xx)
AU1086670A (xx)
AU2130770A (xx)
AU2130570A (xx)
AU1235770A (xx)
AU1581370A (xx)
AU1189670A (xx)