NL7117879A - - Google Patents
Info
- Publication number
- NL7117879A NL7117879A NL7117879A NL7117879A NL7117879A NL 7117879 A NL7117879 A NL 7117879A NL 7117879 A NL7117879 A NL 7117879A NL 7117879 A NL7117879 A NL 7117879A NL 7117879 A NL7117879 A NL 7117879A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/80—Bidirectional devices, e.g. triacs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/251—Lateral thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/40—Thyristors with turn-on by field effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP45124925A JPS5135114B1 (enExample) | 1970-12-28 | 1970-12-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7117879A true NL7117879A (enExample) | 1972-06-30 |
Family
ID=14897530
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7117879A NL7117879A (enExample) | 1970-12-28 | 1971-12-27 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3753055A (enExample) |
| JP (1) | JPS5135114B1 (enExample) |
| AU (1) | AU443096B2 (enExample) |
| CA (1) | CA931662A (enExample) |
| FR (1) | FR2120042B1 (enExample) |
| GB (1) | GB1306570A (enExample) |
| NL (1) | NL7117879A (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2945347A1 (de) * | 1979-11-09 | 1981-05-21 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit hilfsemitterelektrode und verfahren zu seinem betrieb |
| DE2945366A1 (de) * | 1979-11-09 | 1981-05-14 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit steuerbaren emitter-kurzschluessen |
| DE2945380A1 (de) * | 1979-11-09 | 1981-05-21 | Siemens AG, 1000 Berlin und 8000 München | Triac mit einem mehrschichten-halbleiterkoerper |
| JPS5681972A (en) * | 1979-12-07 | 1981-07-04 | Toshiba Corp | Mos type field effect transistor |
| CA1145057A (en) * | 1979-12-28 | 1983-04-19 | Adrian R. Hartman | High voltage solid-state switch |
| DE3041035A1 (de) * | 1980-10-31 | 1982-06-09 | Wolfgang Dipl.-Ing. 1000 Berlin Krautschneider | Durch feldeffekt aus- und einschaltbare halbleitervierschichtstruktur |
| US4400711A (en) * | 1981-03-31 | 1983-08-23 | Rca Corporation | Integrated circuit protection device |
| US4468686A (en) * | 1981-11-13 | 1984-08-28 | Intersil, Inc. | Field terminating structure |
| DE3583897D1 (de) * | 1984-06-22 | 1991-10-02 | Hitachi Ltd | Halbleiterschalter. |
| US4694313A (en) * | 1985-02-19 | 1987-09-15 | Harris Corporation | Conductivity modulated semiconductor structure |
| US5412228A (en) * | 1994-02-10 | 1995-05-02 | North Carolina State University | Multifunctional semiconductor switching device having gate-controlled regenerative and non-regenerative conduction modes, and method of operating same |
| KR100206555B1 (ko) * | 1995-12-30 | 1999-07-01 | 윤종용 | 전력용 트랜지스터 |
| KR100256109B1 (ko) * | 1997-05-07 | 2000-05-01 | 김덕중 | 전력 반도체 장치 |
| US9461035B2 (en) * | 2012-12-28 | 2016-10-04 | Texas Instruments Incorporated | High performance isolated vertical bipolar junction transistor and method for forming in a CMOS integrated circuit |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3090873A (en) * | 1960-06-21 | 1963-05-21 | Bell Telephone Labor Inc | Integrated semiconductor switching device |
| NL293292A (enExample) * | 1962-06-11 | |||
| GB1066159A (en) * | 1964-10-17 | 1967-04-19 | Matsushita Electric Industrial Co Ltd | Semiconductor devices |
| US3391287A (en) * | 1965-07-30 | 1968-07-02 | Westinghouse Electric Corp | Guard junctions for p-nu junction semiconductor devices |
| CA878170A (en) * | 1969-05-12 | 1971-08-10 | L. D. Eng Hung | Field effect controlled switch |
-
1970
- 1970-12-28 JP JP45124925A patent/JPS5135114B1/ja active Pending
-
1971
- 1971-12-22 GB GB5974471A patent/GB1306570A/en not_active Expired
- 1971-12-23 AU AU37289/71A patent/AU443096B2/en not_active Expired
- 1971-12-24 CA CA131144A patent/CA931662A/en not_active Expired
- 1971-12-27 FR FR7146851A patent/FR2120042B1/fr not_active Expired
- 1971-12-27 NL NL7117879A patent/NL7117879A/xx unknown
- 1971-12-28 US US00213128A patent/US3753055A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| GB1306570A (en) | 1973-02-14 |
| DE2163922A1 (de) | 1972-07-13 |
| US3753055A (en) | 1973-08-14 |
| FR2120042B1 (enExample) | 1977-08-05 |
| AU3728971A (en) | 1973-06-28 |
| AU443096B2 (en) | 1973-12-13 |
| CA931662A (en) | 1973-08-07 |
| FR2120042A1 (enExample) | 1972-08-11 |
| JPS5135114B1 (enExample) | 1976-09-30 |
| DE2163922B2 (de) | 1976-10-28 |