NL7117879A - - Google Patents
Info
- Publication number
- NL7117879A NL7117879A NL7117879A NL7117879A NL7117879A NL 7117879 A NL7117879 A NL 7117879A NL 7117879 A NL7117879 A NL 7117879A NL 7117879 A NL7117879 A NL 7117879A NL 7117879 A NL7117879 A NL 7117879A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/747—Bidirectional devices, e.g. triacs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7436—Lateral thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP45124925A JPS5135114B1 (xx) | 1970-12-28 | 1970-12-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7117879A true NL7117879A (xx) | 1972-06-30 |
Family
ID=14897530
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7117879A NL7117879A (xx) | 1970-12-28 | 1971-12-27 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3753055A (xx) |
| JP (1) | JPS5135114B1 (xx) |
| AU (1) | AU443096B2 (xx) |
| CA (1) | CA931662A (xx) |
| FR (1) | FR2120042B1 (xx) |
| GB (1) | GB1306570A (xx) |
| NL (1) | NL7117879A (xx) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2945380A1 (de) * | 1979-11-09 | 1981-05-21 | Siemens AG, 1000 Berlin und 8000 München | Triac mit einem mehrschichten-halbleiterkoerper |
| DE2945347A1 (de) * | 1979-11-09 | 1981-05-21 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit hilfsemitterelektrode und verfahren zu seinem betrieb |
| DE2945366A1 (de) * | 1979-11-09 | 1981-05-14 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit steuerbaren emitter-kurzschluessen |
| JPS5681972A (en) * | 1979-12-07 | 1981-07-04 | Toshiba Corp | Mos type field effect transistor |
| CA1145057A (en) * | 1979-12-28 | 1983-04-19 | Adrian R. Hartman | High voltage solid-state switch |
| DE3041035A1 (de) * | 1980-10-31 | 1982-06-09 | Wolfgang Dipl.-Ing. 1000 Berlin Krautschneider | Durch feldeffekt aus- und einschaltbare halbleitervierschichtstruktur |
| US4400711A (en) * | 1981-03-31 | 1983-08-23 | Rca Corporation | Integrated circuit protection device |
| US4468686A (en) * | 1981-11-13 | 1984-08-28 | Intersil, Inc. | Field terminating structure |
| EP0367301A3 (en) * | 1984-06-22 | 1990-05-16 | Hitachi, Ltd. | Semiconductor switch circuit |
| US4694313A (en) * | 1985-02-19 | 1987-09-15 | Harris Corporation | Conductivity modulated semiconductor structure |
| US5412228A (en) * | 1994-02-10 | 1995-05-02 | North Carolina State University | Multifunctional semiconductor switching device having gate-controlled regenerative and non-regenerative conduction modes, and method of operating same |
| KR100206555B1 (ko) * | 1995-12-30 | 1999-07-01 | 윤종용 | 전력용 트랜지스터 |
| KR100256109B1 (ko) * | 1997-05-07 | 2000-05-01 | 김덕중 | 전력 반도체 장치 |
| US9461035B2 (en) * | 2012-12-28 | 2016-10-04 | Texas Instruments Incorporated | High performance isolated vertical bipolar junction transistor and method for forming in a CMOS integrated circuit |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3090873A (en) * | 1960-06-21 | 1963-05-21 | Bell Telephone Labor Inc | Integrated semiconductor switching device |
| NL293292A (xx) * | 1962-06-11 | |||
| GB1066159A (en) * | 1964-10-17 | 1967-04-19 | Matsushita Electric Ind Co Ltd | Semiconductor devices |
| US3391287A (en) * | 1965-07-30 | 1968-07-02 | Westinghouse Electric Corp | Guard junctions for p-nu junction semiconductor devices |
| CA878170A (en) * | 1969-05-12 | 1971-08-10 | L. D. Eng Hung | Field effect controlled switch |
-
1970
- 1970-12-28 JP JP45124925A patent/JPS5135114B1/ja active Pending
-
1971
- 1971-12-22 GB GB5974471A patent/GB1306570A/en not_active Expired
- 1971-12-23 AU AU37289/71A patent/AU443096B2/en not_active Expired
- 1971-12-24 CA CA131144A patent/CA931662A/en not_active Expired
- 1971-12-27 NL NL7117879A patent/NL7117879A/xx unknown
- 1971-12-27 FR FR7146851A patent/FR2120042B1/fr not_active Expired
- 1971-12-28 US US00213128A patent/US3753055A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CA931662A (en) | 1973-08-07 |
| JPS5135114B1 (xx) | 1976-09-30 |
| AU443096B2 (en) | 1973-12-13 |
| AU3728971A (en) | 1973-06-28 |
| DE2163922A1 (de) | 1972-07-13 |
| US3753055A (en) | 1973-08-14 |
| DE2163922B2 (de) | 1976-10-28 |
| FR2120042A1 (xx) | 1972-08-11 |
| GB1306570A (en) | 1973-02-14 |
| FR2120042B1 (xx) | 1977-08-05 |