NL7111459A - - Google Patents

Info

Publication number
NL7111459A
NL7111459A NL7111459A NL7111459A NL7111459A NL 7111459 A NL7111459 A NL 7111459A NL 7111459 A NL7111459 A NL 7111459A NL 7111459 A NL7111459 A NL 7111459A NL 7111459 A NL7111459 A NL 7111459A
Authority
NL
Netherlands
Application number
NL7111459A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7111459A publication Critical patent/NL7111459A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/83135—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having different gate conductor materials or different gate conductor implants
NL7111459A 1970-08-21 1971-08-19 NL7111459A (cg-RX-API-DMAC7.html)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US6585970A 1970-08-21 1970-08-21
US6585870A 1970-08-21 1970-08-21

Publications (1)

Publication Number Publication Date
NL7111459A true NL7111459A (cg-RX-API-DMAC7.html) 1972-02-23

Family

ID=26746091

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7111459A NL7111459A (cg-RX-API-DMAC7.html) 1970-08-21 1971-08-19

Country Status (5)

Country Link
AU (1) AU3258271A (cg-RX-API-DMAC7.html)
BE (1) BE771608A (cg-RX-API-DMAC7.html)
DE (2) DE7132084U (cg-RX-API-DMAC7.html)
FR (1) FR2103427A1 (cg-RX-API-DMAC7.html)
NL (1) NL7111459A (cg-RX-API-DMAC7.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1360770A (en) * 1972-05-30 1974-07-24 Westinghouse Electric Corp N-channel mos transistor
US3943542A (en) * 1974-11-06 1976-03-09 International Business Machines, Corporation High reliability, low leakage, self-aligned silicon gate FET and method of fabricating same
CH657712A5 (de) * 1978-03-08 1986-09-15 Hitachi Ltd Referenzspannungserzeuger.
US5159260A (en) * 1978-03-08 1992-10-27 Hitachi, Ltd. Reference voltage generator device
JPS55132055A (en) * 1979-03-30 1980-10-14 Nec Corp Mos integrated circuit
US5260593A (en) * 1991-12-10 1993-11-09 Micron Technology, Inc. Semiconductor floating gate device having improved channel-floating gate interaction

Also Published As

Publication number Publication date
DE2142050A1 (de) 1972-03-30
FR2103427A1 (cg-RX-API-DMAC7.html) 1972-04-14
AU3258271A (en) 1973-02-22
DE7132084U (de) 1972-01-05
BE771608A (fr) 1972-02-21

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