NL7104496A - - Google Patents

Info

Publication number
NL7104496A
NL7104496A NL7104496A NL7104496A NL7104496A NL 7104496 A NL7104496 A NL 7104496A NL 7104496 A NL7104496 A NL 7104496A NL 7104496 A NL7104496 A NL 7104496A NL 7104496 A NL7104496 A NL 7104496A
Authority
NL
Netherlands
Application number
NL7104496A
Other versions
NL170901C (nl
NL170901B (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to NLAANVRAGE7104496,A priority Critical patent/NL170901C/xx
Priority to CH467272A priority patent/CH542513A/de
Priority to SE7204115A priority patent/SE381955B/xx
Priority to DE19722215351 priority patent/DE2215351C3/de
Priority to GB1502272A priority patent/GB1388486A/en
Priority to AT283372A priority patent/AT324430B/de
Priority to BE781538A priority patent/BE781538A/fr
Priority to FR7211541A priority patent/FR2132347B1/fr
Priority to IT68034/72A priority patent/IT954586B/it
Priority to ES401405A priority patent/ES401405A1/es
Priority to AR241272A priority patent/AR192354A1/es
Priority to JP47033423A priority patent/JPS51438B1/ja
Priority to BR721920A priority patent/BR7201920D0/pt
Priority to CA138,769A priority patent/CA963173A/en
Publication of NL7104496A publication Critical patent/NL7104496A/xx
Priority to US437005A priority patent/US3873383A/en
Priority to US05/458,526 priority patent/US3961356A/en
Priority to ES428726A priority patent/ES428726A1/es
Priority to HK597/76*UA priority patent/HK59776A/xx
Publication of NL170901B publication Critical patent/NL170901B/xx
Application granted granted Critical
Publication of NL170901C publication Critical patent/NL170901C/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/676—Combinations of only thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P14/61—
    • H10P14/6309—
    • H10P14/6322—
    • H10W10/0121—
    • H10W10/0126—
    • H10W10/13—
    • H10W74/43—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective
NLAANVRAGE7104496,A 1971-04-03 1971-04-03 Werkwijze voor het vervaardigen van een halfgeleiderinrichting. NL170901C (nl)

Priority Applications (18)

Application Number Priority Date Filing Date Title
NLAANVRAGE7104496,A NL170901C (nl) 1971-04-03 1971-04-03 Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
CH467272A CH542513A (de) 1971-04-03 1972-03-29 Halbleiteranordnung und Verfahren zur Herstellung derselben
SE7204115A SE381955B (sv) 1971-04-03 1972-03-29 Halvledaranordning och sett att framstella densamma
DE19722215351 DE2215351C3 (de) 1971-04-03 1972-03-29 Verfahren zur Herstellung eines Halbleiterbauelements
GB1502272A GB1388486A (en) 1971-04-03 1972-03-30 Semiconductor device manufacture
IT68034/72A IT954586B (it) 1971-04-03 1972-03-31 Dispositivo semiconduttore e pro cedimento per la sua fabbricazione
BE781538A BE781538A (fr) 1971-04-03 1972-03-31 Dispositif semiconducteur et son procede de fabrication
FR7211541A FR2132347B1 (cg-RX-API-DMAC10.html) 1971-04-03 1972-03-31
AT283372A AT324430B (de) 1971-04-03 1972-03-31 Halbleiteranordnung und verfahren zur herstellung derselben
ES401405A ES401405A1 (es) 1971-04-03 1972-04-01 Un dispositivo semiconductor.
JP47033423A JPS51438B1 (cg-RX-API-DMAC10.html) 1971-04-03 1972-04-03
BR721920A BR7201920D0 (pt) 1971-04-03 1972-04-03 Dispositivo semicondutor e processo de fabricar o mesmo
AR241272A AR192354A1 (es) 1971-04-03 1972-04-03 Dispositivo semiconductor y metodo de fabricacion del dispositivo semiconductor
CA138,769A CA963173A (en) 1971-04-03 1972-04-04 Semiconductor device and method of manufacturing the semiconductor device
US437005A US3873383A (en) 1971-04-03 1974-01-28 Integrated circuits with oxidation-junction isolation and channel stop
US05/458,526 US3961356A (en) 1971-04-03 1974-04-08 Integrated circuit with oxidation-junction isolation and channel stop
ES428726A ES428726A1 (es) 1971-04-03 1974-07-29 Un metodo de fabricacion de un dispositivo semiconductor.
HK597/76*UA HK59776A (en) 1971-04-03 1976-09-23 Semiconductor device manufacture

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
NLAANVRAGE7104496,A NL170901C (nl) 1971-04-03 1971-04-03 Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
US23878472A 1972-03-28 1972-03-28
US437005A US3873383A (en) 1971-04-03 1974-01-28 Integrated circuits with oxidation-junction isolation and channel stop
US05/458,526 US3961356A (en) 1971-04-03 1974-04-08 Integrated circuit with oxidation-junction isolation and channel stop

Publications (3)

Publication Number Publication Date
NL7104496A true NL7104496A (cg-RX-API-DMAC10.html) 1972-10-05
NL170901B NL170901B (nl) 1982-08-02
NL170901C NL170901C (nl) 1983-01-03

Family

ID=27483791

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7104496,A NL170901C (nl) 1971-04-03 1971-04-03 Werkwijze voor het vervaardigen van een halfgeleiderinrichting.

Country Status (7)

Country Link
US (2) US3873383A (cg-RX-API-DMAC10.html)
AT (1) AT324430B (cg-RX-API-DMAC10.html)
CA (1) CA963173A (cg-RX-API-DMAC10.html)
CH (1) CH542513A (cg-RX-API-DMAC10.html)
FR (1) FR2132347B1 (cg-RX-API-DMAC10.html)
GB (1) GB1388486A (cg-RX-API-DMAC10.html)
NL (1) NL170901C (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7512333A (nl) * 1974-10-29 1976-05-04 Fairchild Camera Instr Co Werkwijze voor het vervaardigen van oxyde-geiso- leerde verticale bipolaire transistoren en com- plementaire oxyde-geisoleerde laterale bipolaire transistoren, en dergelijke aldus vervaardigde transistoren.

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4005453A (en) * 1971-04-14 1977-01-25 U.S. Philips Corporation Semiconductor device with isolated circuit elements and method of making
US3992232A (en) * 1973-08-06 1976-11-16 Hitachi, Ltd. Method of manufacturing semiconductor device having oxide isolation structure and guard ring
GB1457139A (en) * 1973-09-27 1976-12-01 Hitachi Ltd Method of manufacturing semiconductor device
US3979765A (en) * 1974-03-07 1976-09-07 Signetics Corporation Silicon gate MOS device and method
US4023195A (en) * 1974-10-23 1977-05-10 Smc Microsystems Corporation MOS field-effect transistor structure with mesa-like contact and gate areas and selectively deeper junctions
US3993513A (en) * 1974-10-29 1976-11-23 Fairchild Camera And Instrument Corporation Combined method for fabricating oxide-isolated vertical bipolar transistors and complementary oxide-isolated lateral bipolar transistors and the resulting structures
US3967002A (en) * 1974-12-31 1976-06-29 International Business Machines Corporation Method for making high density magnetic bubble domain system
DE2510593C3 (de) * 1975-03-11 1982-03-18 Siemens AG, 1000 Berlin und 8000 München Integrierte Halbleiter-Schaltungsanordnung
US4013484A (en) * 1976-02-25 1977-03-22 Intel Corporation High density CMOS process
US4137109A (en) * 1976-04-12 1979-01-30 Texas Instruments Incorporated Selective diffusion and etching method for isolation of integrated logic circuit
US4047217A (en) * 1976-04-12 1977-09-06 Fairchild Camera And Instrument Corporation High-gain, high-voltage transistor for linear integrated circuits
US4149177A (en) * 1976-09-03 1979-04-10 Fairchild Camera And Instrument Corporation Method of fabricating conductive buried regions in integrated circuits and the resulting structures
US4198649A (en) * 1976-09-03 1980-04-15 Fairchild Camera And Instrument Corporation Memory cell structure utilizing conductive buried regions
US4197143A (en) * 1976-09-03 1980-04-08 Fairchild Camera & Instrument Corporation Method of making a junction field-effect transistor utilizing a conductive buried region
US4064527A (en) * 1976-09-20 1977-12-20 Intersil, Inc. Integrated circuit having a buried load device
JPS5356972A (en) * 1976-11-01 1978-05-23 Mitsubishi Electric Corp Mesa type semiconductor device
US4149906A (en) * 1977-04-29 1979-04-17 International Business Machines Corporation Process for fabrication of merged transistor logic (MTL) cells
US4316319A (en) * 1977-10-25 1982-02-23 International Business Machines Corporation Method for making a high sheet resistance structure for high density integrated circuits
US4140558A (en) * 1978-03-02 1979-02-20 Bell Telephone Laboratories, Incorporated Isolation of integrated circuits utilizing selective etching and diffusion
JPS5951743B2 (ja) * 1978-11-08 1984-12-15 株式会社日立製作所 半導体集積装置
JPS5852339B2 (ja) * 1979-03-20 1983-11-22 富士通株式会社 半導体装置の製造方法
JPS55153342A (en) * 1979-05-18 1980-11-29 Fujitsu Ltd Semiconductor device and its manufacture
US4289550A (en) * 1979-05-25 1981-09-15 Raytheon Company Method of forming closely spaced device regions utilizing selective etching and diffusion
US4261763A (en) * 1979-10-01 1981-04-14 Burroughs Corporation Fabrication of integrated circuits employing only ion implantation for all dopant layers
JPS5673446A (en) * 1979-11-21 1981-06-18 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
US4373965A (en) * 1980-12-22 1983-02-15 Ncr Corporation Suppression of parasitic sidewall transistors in locos structures
US4824797A (en) * 1985-10-31 1989-04-25 International Business Machines Corporation Self-aligned channel stop
DE4119904A1 (de) * 1991-06-17 1992-12-24 Telefunken Electronic Gmbh Halbleiteranordnung
US6087677A (en) * 1997-11-10 2000-07-11 Integrated Silicon Solutions Inc. High density self-aligned antifuse
DE19840032C1 (de) * 1998-09-02 1999-11-18 Siemens Ag Halbleiterbauelement und Herstellungsverfahren dazu
US6819089B2 (en) * 2001-11-09 2004-11-16 Infineon Technologies Ag Power factor correction circuit with high-voltage semiconductor component
US6825514B2 (en) * 2001-11-09 2004-11-30 Infineon Technologies Ag High-voltage semiconductor component

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1095413A (cg-RX-API-DMAC10.html) * 1964-12-24
US3386865A (en) * 1965-05-10 1968-06-04 Ibm Process of making planar semiconductor devices isolated by encapsulating oxide filled channels
NL159817B (nl) * 1966-10-05 1979-03-15 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting.
NL152707B (nl) * 1967-06-08 1977-03-15 Philips Nv Halfgeleiderinrichting bevattende een veldeffecttransistor van het type met geisoleerde poortelektrode en werkwijze ter vervaardiging daarvan.
NL6916988A (cg-RX-API-DMAC10.html) * 1969-11-11 1971-05-13
NL169936C (nl) * 1970-07-10 1982-09-01 Philips Nv Halfgeleiderinrichting omvattende een halfgeleiderlichaam met een althans ten dele in het halfgeleiderlichaam verzonken oxydepatroon.
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure
US3751722A (en) * 1971-04-30 1973-08-07 Standard Microsyst Smc Mos integrated circuit with substrate containing selectively formed resistivity regions
US3796613A (en) * 1971-06-18 1974-03-12 Ibm Method of forming dielectric isolation for high density pedestal semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7512333A (nl) * 1974-10-29 1976-05-04 Fairchild Camera Instr Co Werkwijze voor het vervaardigen van oxyde-geiso- leerde verticale bipolaire transistoren en com- plementaire oxyde-geisoleerde laterale bipolaire transistoren, en dergelijke aldus vervaardigde transistoren.

Also Published As

Publication number Publication date
CA963173A (en) 1975-02-18
NL170901C (nl) 1983-01-03
US3961356A (en) 1976-06-01
NL170901B (nl) 1982-08-02
GB1388486A (en) 1975-03-26
US3873383A (en) 1975-03-25
CH542513A (de) 1973-11-15
FR2132347A1 (cg-RX-API-DMAC10.html) 1972-11-17
DE2215351A1 (de) 1972-10-12
FR2132347B1 (cg-RX-API-DMAC10.html) 1977-08-26
DE2215351B2 (de) 1977-05-05
AT324430B (de) 1975-08-25

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Legal Events

Date Code Title Description
V4 Discontinued because of reaching the maximum lifetime of a patent