NL7013227A - - Google Patents

Info

Publication number
NL7013227A
NL7013227A NL7013227A NL7013227A NL7013227A NL 7013227 A NL7013227 A NL 7013227A NL 7013227 A NL7013227 A NL 7013227A NL 7013227 A NL7013227 A NL 7013227A NL 7013227 A NL7013227 A NL 7013227A
Authority
NL
Netherlands
Application number
NL7013227A
Inventor
H G Kock
Nobel D De
R P Tijburg
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL7013227A priority Critical patent/NL7013227A/xx
Priority to DE19712142342 priority patent/DE2142342A1/de
Priority to US00177642A priority patent/US3767482A/en
Priority to AU33085/71A priority patent/AU3308571A/en
Priority to CA122056A priority patent/CA933676A/en
Priority to GB4122571A priority patent/GB1357650A/en
Priority to BE772254A priority patent/BE772254A/xx
Priority to SE7111268A priority patent/SE375186B/xx
Priority to BR5887/71A priority patent/BR7105887D0/pt
Priority to FR7132439A priority patent/FR2106380B1/fr
Publication of NL7013227A publication Critical patent/NL7013227A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/02—Contacts, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
NL7013227A 1970-09-08 1970-09-08 NL7013227A (ko)

Priority Applications (10)

Application Number Priority Date Filing Date Title
NL7013227A NL7013227A (ko) 1970-09-08 1970-09-08
DE19712142342 DE2142342A1 (de) 1970-09-08 1971-08-24 Verfahren zur Herstellung einer Halbleiteranordnung
US00177642A US3767482A (en) 1970-09-08 1971-09-03 Method of manufacturing a semiconductor device
AU33085/71A AU3308571A (en) 1970-09-08 1971-09-03 Manufacturing a semiconductor device
CA122056A CA933676A (en) 1970-09-08 1971-09-03 Method of manufacturing a semiconductor device
GB4122571A GB1357650A (en) 1970-09-08 1971-09-03 Methods of manufacturing semiconductor devices
BE772254A BE772254A (fr) 1970-09-08 1971-09-06 Procede de fabrication d'un dispositif semi-conducteur
SE7111268A SE375186B (ko) 1970-09-08 1971-09-06
BR5887/71A BR7105887D0 (pt) 1970-09-08 1971-09-06 Processo para a fabricacao de um dispositivo semicondutor
FR7132439A FR2106380B1 (ko) 1970-09-08 1971-09-08

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7013227A NL7013227A (ko) 1970-09-08 1970-09-08

Publications (1)

Publication Number Publication Date
NL7013227A true NL7013227A (ko) 1972-03-10

Family

ID=19810981

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7013227A NL7013227A (ko) 1970-09-08 1970-09-08

Country Status (10)

Country Link
US (1) US3767482A (ko)
AU (1) AU3308571A (ko)
BE (1) BE772254A (ko)
BR (1) BR7105887D0 (ko)
CA (1) CA933676A (ko)
DE (1) DE2142342A1 (ko)
FR (1) FR2106380B1 (ko)
GB (1) GB1357650A (ko)
NL (1) NL7013227A (ko)
SE (1) SE375186B (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3890455A (en) * 1972-06-23 1975-06-17 Ibm Method of electrolessly plating alloys
FR2230078B1 (ko) * 1973-05-18 1977-07-29 Radiotechnique Compelec
GB1450998A (en) * 1974-03-29 1976-09-29 Secr Defence Transferred electron devices
US4000508A (en) * 1975-07-17 1976-12-28 Honeywell Inc. Ohmic contacts to p-type mercury cadmium telluride
US4081824A (en) * 1977-03-24 1978-03-28 Bell Telephone Laboratories, Incorporated Ohmic contact to aluminum-containing compound semiconductors
US4379005A (en) * 1979-10-26 1983-04-05 International Business Machines Corporation Semiconductor device fabrication
JPS6348392A (ja) * 1986-08-15 1988-03-01 Toa Netsuken Kk 石炭の排ガスダストのクリンカ−アツシユ抑制方法
US6632730B1 (en) 1999-11-23 2003-10-14 Ebara Solar, Inc. Method for self-doping contacts to a semiconductor
GB2424312B (en) * 2005-03-14 2010-03-03 Denso Corp Method of forming an ohmic contact in wide band semiconductor

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2801348A (en) * 1954-05-03 1957-07-30 Rca Corp Semiconductor devices
US2801375A (en) * 1955-08-01 1957-07-30 Westinghouse Electric Corp Silicon semiconductor devices and processes for making them
NL209275A (ko) * 1955-09-02
US3070466A (en) * 1959-04-30 1962-12-25 Ibm Diffusion in semiconductor material
NL269092A (ko) * 1960-09-09 1900-01-01
US3211594A (en) * 1961-12-19 1965-10-12 Hughes Aircraft Co Semiconductor device manufacture
US3243325A (en) * 1962-06-09 1966-03-29 Fujitsu Ltd Method of producing a variable-capacitance germanium diode and product produced thereby
FR1404315A (fr) * 1963-08-19 1965-06-25 Ibm Dispositif semi-conducteurs et leur procédé de fabrication
FR1522197A (fr) * 1966-06-08 1968-04-19 Western Electric Co Procédé pour former un contact ohmique sur de l'arséniure de gallium du type n
US3533856A (en) * 1967-07-17 1970-10-13 Bell Telephone Labor Inc Method for solution growth of gallium arsenide and gallium phosphide

Also Published As

Publication number Publication date
CA933676A (en) 1973-09-11
US3767482A (en) 1973-10-23
FR2106380A1 (ko) 1972-05-05
BE772254A (fr) 1972-03-06
GB1357650A (en) 1974-06-26
AU3308571A (en) 1973-03-08
SE375186B (ko) 1975-04-07
DE2142342A1 (de) 1972-03-16
BR7105887D0 (pt) 1973-04-17
FR2106380B1 (ko) 1976-05-28

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