CA933676A - Method of manufacturing a semiconductor device - Google Patents

Method of manufacturing a semiconductor device

Info

Publication number
CA933676A
CA933676A CA122056A CA122056A CA933676A CA 933676 A CA933676 A CA 933676A CA 122056 A CA122056 A CA 122056A CA 122056 A CA122056 A CA 122056A CA 933676 A CA933676 A CA 933676A
Authority
CA
Canada
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA122056A
Other languages
English (en)
Other versions
CA122056S (en
Inventor
P. Tijburg Rudolf
G. Kock Hendrikus
De Nobel Dirk
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of CA933676A publication Critical patent/CA933676A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/02—Contacts, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
CA122056A 1970-09-08 1971-09-03 Method of manufacturing a semiconductor device Expired CA933676A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7013227A NL7013227A (ko) 1970-09-08 1970-09-08

Publications (1)

Publication Number Publication Date
CA933676A true CA933676A (en) 1973-09-11

Family

ID=19810981

Family Applications (1)

Application Number Title Priority Date Filing Date
CA122056A Expired CA933676A (en) 1970-09-08 1971-09-03 Method of manufacturing a semiconductor device

Country Status (10)

Country Link
US (1) US3767482A (ko)
AU (1) AU3308571A (ko)
BE (1) BE772254A (ko)
BR (1) BR7105887D0 (ko)
CA (1) CA933676A (ko)
DE (1) DE2142342A1 (ko)
FR (1) FR2106380B1 (ko)
GB (1) GB1357650A (ko)
NL (1) NL7013227A (ko)
SE (1) SE375186B (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3890455A (en) * 1972-06-23 1975-06-17 Ibm Method of electrolessly plating alloys
FR2230078B1 (ko) * 1973-05-18 1977-07-29 Radiotechnique Compelec
GB1450998A (en) * 1974-03-29 1976-09-29 Secr Defence Transferred electron devices
US4000508A (en) * 1975-07-17 1976-12-28 Honeywell Inc. Ohmic contacts to p-type mercury cadmium telluride
US4081824A (en) * 1977-03-24 1978-03-28 Bell Telephone Laboratories, Incorporated Ohmic contact to aluminum-containing compound semiconductors
US4379005A (en) * 1979-10-26 1983-04-05 International Business Machines Corporation Semiconductor device fabrication
JPS6348392A (ja) * 1986-08-15 1988-03-01 Toa Netsuken Kk 石炭の排ガスダストのクリンカ−アツシユ抑制方法
US6632730B1 (en) * 1999-11-23 2003-10-14 Ebara Solar, Inc. Method for self-doping contacts to a semiconductor
GB2424312B (en) * 2005-03-14 2010-03-03 Denso Corp Method of forming an ohmic contact in wide band semiconductor

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2801348A (en) * 1954-05-03 1957-07-30 Rca Corp Semiconductor devices
US2801375A (en) * 1955-08-01 1957-07-30 Westinghouse Electric Corp Silicon semiconductor devices and processes for making them
NL209275A (ko) * 1955-09-02
US3070466A (en) * 1959-04-30 1962-12-25 Ibm Diffusion in semiconductor material
NL269092A (ko) * 1960-09-09 1900-01-01
US3211594A (en) * 1961-12-19 1965-10-12 Hughes Aircraft Co Semiconductor device manufacture
US3243325A (en) * 1962-06-09 1966-03-29 Fujitsu Ltd Method of producing a variable-capacitance germanium diode and product produced thereby
FR1404315A (fr) * 1963-08-19 1965-06-25 Ibm Dispositif semi-conducteurs et leur procédé de fabrication
FR1522197A (fr) * 1966-06-08 1968-04-19 Western Electric Co Procédé pour former un contact ohmique sur de l'arséniure de gallium du type n
US3533856A (en) * 1967-07-17 1970-10-13 Bell Telephone Labor Inc Method for solution growth of gallium arsenide and gallium phosphide

Also Published As

Publication number Publication date
SE375186B (ko) 1975-04-07
DE2142342A1 (de) 1972-03-16
BE772254A (fr) 1972-03-06
FR2106380B1 (ko) 1976-05-28
BR7105887D0 (pt) 1973-04-17
NL7013227A (ko) 1972-03-10
US3767482A (en) 1973-10-23
FR2106380A1 (ko) 1972-05-05
AU3308571A (en) 1973-03-08
GB1357650A (en) 1974-06-26

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