NL6917810A - - Google Patents
Info
- Publication number
- NL6917810A NL6917810A NL6917810A NL6917810A NL6917810A NL 6917810 A NL6917810 A NL 6917810A NL 6917810 A NL6917810 A NL 6917810A NL 6917810 A NL6917810 A NL 6917810A NL 6917810 A NL6917810 A NL 6917810A
- Authority
- NL
- Netherlands
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/049—Equivalence and options
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/106—Masks, special
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US77996768A | 1968-11-29 | 1968-11-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
NL6917810A true NL6917810A (fr) | 1970-06-02 |
NL142526B NL142526B (nl) | 1974-06-17 |
Family
ID=25118147
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL696917810A NL142526B (nl) | 1968-11-29 | 1969-11-26 | Werkwijze voor het vervaardigen van halfgeleiderinrichtingen omvattende een halfgeleiderlichaam met nauwkeurig vastgestelde halfgeleidergebieden en afstanden daartussen. |
Country Status (3)
Country | Link |
---|---|
US (1) | US3560278A (fr) |
DE (1) | DE1959895A1 (fr) |
NL (1) | NL142526B (fr) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3648127A (en) * | 1970-09-28 | 1972-03-07 | Fairchild Camera Instr Co | Reach through or punch{13 through breakdown for gate protection in mos devices |
US3719535A (en) * | 1970-12-21 | 1973-03-06 | Motorola Inc | Hyperfine geometry devices and method for their fabrication |
US3776786A (en) * | 1971-03-18 | 1973-12-04 | Motorola Inc | Method of producing high speed transistors and resistors simultaneously |
DE2157633C3 (de) * | 1971-11-20 | 1980-01-24 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Verfahren zum Herstellen von Zonen einer monolithisch integrierten Festkörperschaltung |
US3800412A (en) * | 1972-04-05 | 1974-04-02 | Alpha Ind Inc | Process for producing surface-oriented semiconducting devices |
JPS524426B2 (fr) * | 1973-04-20 | 1977-02-03 | ||
US3919005A (en) * | 1973-05-07 | 1975-11-11 | Fairchild Camera Instr Co | Method for fabricating double-diffused, lateral transistor |
US3979230A (en) * | 1973-10-30 | 1976-09-07 | General Electric Company | Method of making isolation grids in bodies of semiconductor material |
US3953875A (en) * | 1974-01-02 | 1976-04-27 | Motorola, Inc. | Capacitor structure and circuit facilitating increased frequency stability of integrated circuits |
US3966515A (en) * | 1974-05-17 | 1976-06-29 | Teledyne, Inc. | Method for manufacturing high voltage field-effect transistors |
FR2282162A1 (fr) * | 1974-08-12 | 1976-03-12 | Radiotechnique Compelec | Procede de realisation de dispositifs semiconducteurs |
DE2453134C3 (de) * | 1974-11-08 | 1983-02-10 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Planardiffusionsverfahren |
US4153487A (en) * | 1974-12-27 | 1979-05-08 | Tokyo Shibaura Electric Co., Ltd. | Method of manufacturing intergrated injection logic semiconductor devices utilizing self-aligned double-diffusion techniques |
US4151019A (en) * | 1974-12-27 | 1979-04-24 | Tokyo Shibaura Electric Co., Ltd. | Method of manufacturing integrated injection logic semiconductor devices utilizing self-aligned double-diffusion techniques |
US4058419A (en) * | 1974-12-27 | 1977-11-15 | Tokyo Shibaura Electric, Co., Ltd. | Method of manufacturing integrated injection logic semiconductor devices utilizing self-aligned double-diffusion techniques |
US4018627A (en) * | 1975-09-22 | 1977-04-19 | Signetics Corporation | Method for fabricating semiconductor devices utilizing oxide protective layer |
US4135954A (en) * | 1977-07-12 | 1979-01-23 | International Business Machines Corporation | Method for fabricating self-aligned semiconductor devices utilizing selectively etchable masking layers |
US4219369A (en) * | 1977-09-30 | 1980-08-26 | Hitachi, Ltd. | Method of making semiconductor integrated circuit device |
US4233337A (en) * | 1978-05-01 | 1980-11-11 | International Business Machines Corporation | Method for forming semiconductor contacts |
US4443932A (en) * | 1982-01-18 | 1984-04-24 | Motorla, Inc. | Self-aligned oxide isolated process and device |
DE4006478C2 (de) * | 1990-03-02 | 1999-02-18 | Klaus Wolf | Hilfsgerät zum Betätigen von Absperrschiebern |
DE19718861C2 (de) * | 1996-04-30 | 2000-06-08 | Weiss Gmbh & Co Leonhard | Bagger, insbesondere Teleskop-Bagger |
-
1968
- 1968-11-29 US US779967A patent/US3560278A/en not_active Expired - Lifetime
-
1969
- 1969-11-26 NL NL696917810A patent/NL142526B/xx unknown
- 1969-11-28 DE DE19691959895 patent/DE1959895A1/de active Pending
Also Published As
Publication number | Publication date |
---|---|
NL142526B (nl) | 1974-06-17 |
DE1959895A1 (de) | 1970-07-09 |
US3560278A (en) | 1971-02-02 |