NL6818214A - - Google Patents

Info

Publication number
NL6818214A
NL6818214A NL6818214A NL6818214A NL6818214A NL 6818214 A NL6818214 A NL 6818214A NL 6818214 A NL6818214 A NL 6818214A NL 6818214 A NL6818214 A NL 6818214A NL 6818214 A NL6818214 A NL 6818214A
Authority
NL
Netherlands
Application number
NL6818214A
Other versions
NL162790B (nl
NL162790C (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6818214A publication Critical patent/NL6818214A/xx
Publication of NL162790B publication Critical patent/NL162790B/xx
Application granted granted Critical
Publication of NL162790C publication Critical patent/NL162790C/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/40Encapsulations, e.g. protective coatings characterised by their materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/141Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/536Shapes of wire connectors the connected ends being ball-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/59Bond pads specially adapted therefor
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/003Anneal
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/043Dual dielectric
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/053Field effect transistors fets
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/106Masks, special
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/141Self-alignment coat gate
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/145Shaped junctions
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/914Doping
    • Y10S438/923Diffusion through a layer
NL6818214.A 1967-12-18 1968-12-18 Werkwijze voor het vervaardigen van veldeffect- transistoren met een geisoleerde stuurelektrode. NL162790C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US69148367A 1967-12-18 1967-12-18

Publications (3)

Publication Number Publication Date
NL6818214A true NL6818214A (enExample) 1969-06-20
NL162790B NL162790B (nl) 1980-01-15
NL162790C NL162790C (nl) 1980-06-16

Family

ID=24776712

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6818214.A NL162790C (nl) 1967-12-18 1968-12-18 Werkwijze voor het vervaardigen van veldeffect- transistoren met een geisoleerde stuurelektrode.

Country Status (7)

Country Link
US (1) US3541676A (enExample)
CH (1) CH490739A (enExample)
DE (1) DE1814747C2 (enExample)
FR (1) FR1599294A (enExample)
GB (1) GB1253820A (enExample)
NL (1) NL162790C (enExample)
SE (1) SE335578B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2064129A1 (enExample) * 1969-10-03 1971-07-16 Gen Electric
FR2103520A1 (enExample) * 1970-08-26 1972-04-14 Western Electric Co

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3804681A (en) * 1967-04-18 1974-04-16 Ibm Method for making a schottky-barrier field effect transistor
US3670403A (en) * 1970-03-19 1972-06-20 Gen Electric Three masking step process for fabricating insulated gate field effect transistors
US3824677A (en) * 1970-12-01 1974-07-23 Licentia Gmbh Method of manufacturing a field effect transistor
US3967981A (en) * 1971-01-14 1976-07-06 Shumpei Yamazaki Method for manufacturing a semiconductor field effort transistor
US3751314A (en) * 1971-07-01 1973-08-07 Bell Telephone Labor Inc Silicon semiconductor device processing
US3775197A (en) * 1972-01-05 1973-11-27 A Sahagun Method to produce high concentrations of dopant in silicon
US3798081A (en) * 1972-02-14 1974-03-19 Ibm Method for diffusing as into silicon from a solid phase
US4048350A (en) * 1975-09-19 1977-09-13 International Business Machines Corporation Semiconductor device having reduced surface leakage and methods of manufacture
US4317276A (en) * 1980-06-12 1982-03-02 Teletype Corporation Method of manufacturing an insulated gate field-effect transistor therefore in a silicon wafer

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3200019A (en) * 1962-01-19 1965-08-10 Rca Corp Method for making a semiconductor device
FR1373247A (fr) * 1962-09-07 1964-09-25 Rca Corp Dispositif semiconducteur et procédé pour la fabrication de ce dispositif
BE637064A (enExample) * 1962-09-07 Rca Corp
US3165430A (en) * 1963-01-21 1965-01-12 Siliconix Inc Method of ultra-fine semiconductor manufacture
US3417464A (en) * 1965-05-21 1968-12-24 Ibm Method for fabricating insulated-gate field-effect transistors
US3447238A (en) * 1965-08-09 1969-06-03 Raytheon Co Method of making a field effect transistor by diffusion,coating with an oxide and placing a metal layer on the oxide
US3426422A (en) * 1965-10-23 1969-02-11 Fairchild Camera Instr Co Method of making stable semiconductor devices
US3438873A (en) * 1966-05-11 1969-04-15 Bell Telephone Labor Inc Anodic treatment to alter solubility of dielectric films

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2064129A1 (enExample) * 1969-10-03 1971-07-16 Gen Electric
FR2103520A1 (enExample) * 1970-08-26 1972-04-14 Western Electric Co

Also Published As

Publication number Publication date
NL162790B (nl) 1980-01-15
FR1599294A (enExample) 1970-07-15
DE1814747C2 (de) 1981-10-08
GB1253820A (en) 1971-11-17
SE335578B (enExample) 1971-06-01
US3541676A (en) 1970-11-24
CH490739A (de) 1970-05-15
NL162790C (nl) 1980-06-16
DE1814747A1 (de) 1970-03-05

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee