NL6818214A - - Google Patents
Info
- Publication number
- NL6818214A NL6818214A NL6818214A NL6818214A NL6818214A NL 6818214 A NL6818214 A NL 6818214A NL 6818214 A NL6818214 A NL 6818214A NL 6818214 A NL6818214 A NL 6818214A NL 6818214 A NL6818214 A NL 6818214A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
- H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
- H10P32/141—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
- H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/59—Bond pads specially adapted therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/003—Anneal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/043—Dual dielectric
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/106—Masks, special
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/141—Self-alignment coat gate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/145—Shaped junctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/923—Diffusion through a layer
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US69148367A | 1967-12-18 | 1967-12-18 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NL6818214A true NL6818214A (enExample) | 1969-06-20 |
| NL162790B NL162790B (nl) | 1980-01-15 |
| NL162790C NL162790C (nl) | 1980-06-16 |
Family
ID=24776712
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL6818214.A NL162790C (nl) | 1967-12-18 | 1968-12-18 | Werkwijze voor het vervaardigen van veldeffect- transistoren met een geisoleerde stuurelektrode. |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3541676A (enExample) |
| CH (1) | CH490739A (enExample) |
| DE (1) | DE1814747C2 (enExample) |
| FR (1) | FR1599294A (enExample) |
| GB (1) | GB1253820A (enExample) |
| NL (1) | NL162790C (enExample) |
| SE (1) | SE335578B (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2064129A1 (enExample) * | 1969-10-03 | 1971-07-16 | Gen Electric | |
| FR2103520A1 (enExample) * | 1970-08-26 | 1972-04-14 | Western Electric Co |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3804681A (en) * | 1967-04-18 | 1974-04-16 | Ibm | Method for making a schottky-barrier field effect transistor |
| US3670403A (en) * | 1970-03-19 | 1972-06-20 | Gen Electric | Three masking step process for fabricating insulated gate field effect transistors |
| US3824677A (en) * | 1970-12-01 | 1974-07-23 | Licentia Gmbh | Method of manufacturing a field effect transistor |
| US3967981A (en) * | 1971-01-14 | 1976-07-06 | Shumpei Yamazaki | Method for manufacturing a semiconductor field effort transistor |
| US3751314A (en) * | 1971-07-01 | 1973-08-07 | Bell Telephone Labor Inc | Silicon semiconductor device processing |
| US3775197A (en) * | 1972-01-05 | 1973-11-27 | A Sahagun | Method to produce high concentrations of dopant in silicon |
| US3798081A (en) * | 1972-02-14 | 1974-03-19 | Ibm | Method for diffusing as into silicon from a solid phase |
| US4048350A (en) * | 1975-09-19 | 1977-09-13 | International Business Machines Corporation | Semiconductor device having reduced surface leakage and methods of manufacture |
| US4317276A (en) * | 1980-06-12 | 1982-03-02 | Teletype Corporation | Method of manufacturing an insulated gate field-effect transistor therefore in a silicon wafer |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3200019A (en) * | 1962-01-19 | 1965-08-10 | Rca Corp | Method for making a semiconductor device |
| FR1373247A (fr) * | 1962-09-07 | 1964-09-25 | Rca Corp | Dispositif semiconducteur et procédé pour la fabrication de ce dispositif |
| BE637064A (enExample) * | 1962-09-07 | Rca Corp | ||
| US3165430A (en) * | 1963-01-21 | 1965-01-12 | Siliconix Inc | Method of ultra-fine semiconductor manufacture |
| US3417464A (en) * | 1965-05-21 | 1968-12-24 | Ibm | Method for fabricating insulated-gate field-effect transistors |
| US3447238A (en) * | 1965-08-09 | 1969-06-03 | Raytheon Co | Method of making a field effect transistor by diffusion,coating with an oxide and placing a metal layer on the oxide |
| US3426422A (en) * | 1965-10-23 | 1969-02-11 | Fairchild Camera Instr Co | Method of making stable semiconductor devices |
| US3438873A (en) * | 1966-05-11 | 1969-04-15 | Bell Telephone Labor Inc | Anodic treatment to alter solubility of dielectric films |
-
1967
- 1967-12-18 US US691483A patent/US3541676A/en not_active Expired - Lifetime
-
1968
- 1968-12-13 GB GB59514/68A patent/GB1253820A/en not_active Expired
- 1968-12-14 DE DE1814747A patent/DE1814747C2/de not_active Expired
- 1968-12-17 CH CH1874868A patent/CH490739A/de not_active IP Right Cessation
- 1968-12-18 SE SE17395/68A patent/SE335578B/xx unknown
- 1968-12-18 NL NL6818214.A patent/NL162790C/xx not_active IP Right Cessation
- 1968-12-18 FR FR1599294D patent/FR1599294A/fr not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2064129A1 (enExample) * | 1969-10-03 | 1971-07-16 | Gen Electric | |
| FR2103520A1 (enExample) * | 1970-08-26 | 1972-04-14 | Western Electric Co |
Also Published As
| Publication number | Publication date |
|---|---|
| NL162790B (nl) | 1980-01-15 |
| FR1599294A (enExample) | 1970-07-15 |
| DE1814747C2 (de) | 1981-10-08 |
| GB1253820A (en) | 1971-11-17 |
| SE335578B (enExample) | 1971-06-01 |
| US3541676A (en) | 1970-11-24 |
| CH490739A (de) | 1970-05-15 |
| NL162790C (nl) | 1980-06-16 |
| DE1814747A1 (de) | 1970-03-05 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| V1 | Lapsed because of non-payment of the annual fee |