CH490739A - Verfahren zur Herstellung von Feldeffekttransistoren - Google Patents

Verfahren zur Herstellung von Feldeffekttransistoren

Info

Publication number
CH490739A
CH490739A CH1874868A CH1874868A CH490739A CH 490739 A CH490739 A CH 490739A CH 1874868 A CH1874868 A CH 1874868A CH 1874868 A CH1874868 A CH 1874868A CH 490739 A CH490739 A CH 490739A
Authority
CH
Switzerland
Prior art keywords
production
field effect
effect transistors
transistors
field
Prior art date
Application number
CH1874868A
Other languages
German (de)
English (en)
Inventor
Marius Brown Dale
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of CH490739A publication Critical patent/CH490739A/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/141—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/003—Anneal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/141—Self-alignment coat gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/923—Diffusion through a layer
CH1874868A 1967-12-18 1968-12-17 Verfahren zur Herstellung von Feldeffekttransistoren CH490739A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US69148367A 1967-12-18 1967-12-18

Publications (1)

Publication Number Publication Date
CH490739A true CH490739A (de) 1970-05-15

Family

ID=24776712

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1874868A CH490739A (de) 1967-12-18 1968-12-17 Verfahren zur Herstellung von Feldeffekttransistoren

Country Status (7)

Country Link
US (1) US3541676A (enExample)
CH (1) CH490739A (enExample)
DE (1) DE1814747C2 (enExample)
FR (1) FR1599294A (enExample)
GB (1) GB1253820A (enExample)
NL (1) NL162790C (enExample)
SE (1) SE335578B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3804681A (en) * 1967-04-18 1974-04-16 Ibm Method for making a schottky-barrier field effect transistor
NL96608C (enExample) * 1969-10-03
US3670403A (en) * 1970-03-19 1972-06-20 Gen Electric Three masking step process for fabricating insulated gate field effect transistors
US3730787A (en) * 1970-08-26 1973-05-01 Bell Telephone Labor Inc Method of fabricating semiconductor integrated circuits using deposited doped oxides as a source of dopant impurities
US3824677A (en) * 1970-12-01 1974-07-23 Licentia Gmbh Method of manufacturing a field effect transistor
US3967981A (en) * 1971-01-14 1976-07-06 Shumpei Yamazaki Method for manufacturing a semiconductor field effort transistor
US3751314A (en) * 1971-07-01 1973-08-07 Bell Telephone Labor Inc Silicon semiconductor device processing
US3775197A (en) * 1972-01-05 1973-11-27 A Sahagun Method to produce high concentrations of dopant in silicon
US3798081A (en) * 1972-02-14 1974-03-19 Ibm Method for diffusing as into silicon from a solid phase
US4048350A (en) * 1975-09-19 1977-09-13 International Business Machines Corporation Semiconductor device having reduced surface leakage and methods of manufacture
US4317276A (en) * 1980-06-12 1982-03-02 Teletype Corporation Method of manufacturing an insulated gate field-effect transistor therefore in a silicon wafer

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3200019A (en) * 1962-01-19 1965-08-10 Rca Corp Method for making a semiconductor device
FR1373247A (fr) * 1962-09-07 1964-09-25 Rca Corp Dispositif semiconducteur et procédé pour la fabrication de ce dispositif
BE637064A (enExample) * 1962-09-07 Rca Corp
US3165430A (en) * 1963-01-21 1965-01-12 Siliconix Inc Method of ultra-fine semiconductor manufacture
US3417464A (en) * 1965-05-21 1968-12-24 Ibm Method for fabricating insulated-gate field-effect transistors
US3447238A (en) * 1965-08-09 1969-06-03 Raytheon Co Method of making a field effect transistor by diffusion,coating with an oxide and placing a metal layer on the oxide
US3426422A (en) * 1965-10-23 1969-02-11 Fairchild Camera Instr Co Method of making stable semiconductor devices
US3438873A (en) * 1966-05-11 1969-04-15 Bell Telephone Labor Inc Anodic treatment to alter solubility of dielectric films

Also Published As

Publication number Publication date
NL162790B (nl) 1980-01-15
FR1599294A (enExample) 1970-07-15
DE1814747C2 (de) 1981-10-08
GB1253820A (en) 1971-11-17
SE335578B (enExample) 1971-06-01
US3541676A (en) 1970-11-24
NL162790C (nl) 1980-06-16
DE1814747A1 (de) 1970-03-05
NL6818214A (enExample) 1969-06-20

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