NL6816188A - - Google Patents

Info

Publication number
NL6816188A
NL6816188A NL6816188A NL6816188A NL6816188A NL 6816188 A NL6816188 A NL 6816188A NL 6816188 A NL6816188 A NL 6816188A NL 6816188 A NL6816188 A NL 6816188A NL 6816188 A NL6816188 A NL 6816188A
Authority
NL
Netherlands
Application number
NL6816188A
Other versions
NL157148B (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6816188A publication Critical patent/NL6816188A/xx
Publication of NL157148B publication Critical patent/NL157148B/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40Crystalline structures
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/01Manufacture or treatment
    • H10D64/011Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0113Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors the conductive layers comprising highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/0112Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/02Manufacture or treatment characterised by using material-based technologies
    • H10D84/03Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401Combinations of FETs or IGBTs with BJTs
    • H10D84/403Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/021Manufacture or treatment of interconnections within wafers or substrates
NL6816188.A 1967-11-14 1968-11-13 Halfgeleiderinrichting. NL157148B (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7315567 1967-11-14
JP8205367 1967-12-21

Publications (2)

Publication Number Publication Date
NL6816188A true NL6816188A (https=) 1969-05-19
NL157148B NL157148B (nl) 1978-06-15

Family

ID=26414310

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6816188.A NL157148B (nl) 1967-11-14 1968-11-13 Halfgeleiderinrichting.

Country Status (8)

Country Link
BE (1) BE723823A (https=)
CH (1) CH509663A (https=)
DE (1) DE1808926B2 (https=)
FR (1) FR1596671A (https=)
GB (1) GB1252293A (https=)
NL (1) NL157148B (https=)
NO (1) NO123436B (https=)
SE (2) SE354544B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2009497B (en) * 1977-10-26 1982-06-30 Tokyo Shibaura Electric Co Method for manufacturing a semiconductor device
IT1110843B (it) * 1978-02-27 1986-01-06 Rca Corp Contatto affondato per dispositivi mos di tipo complementare

Also Published As

Publication number Publication date
FR1596671A (https=) 1970-06-22
CH509663A (fr) 1971-06-30
SE354544B (https=) 1973-03-12
BE723823A (https=) 1969-04-16
DE1808926A1 (de) 1969-07-17
DE1808926B2 (de) 1979-08-02
NO123436B (https=) 1971-11-15
GB1252293A (https=) 1971-11-03
NL157148B (nl) 1978-06-15
SE361778B (https=) 1973-11-12

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee
NL80 Information provided on patent owner name for an already discontinued patent

Owner name: SONY