NL157148B - Halfgeleiderinrichting. - Google Patents

Halfgeleiderinrichting.

Info

Publication number
NL157148B
NL157148B NL6816188.A NL6816188A NL157148B NL 157148 B NL157148 B NL 157148B NL 6816188 A NL6816188 A NL 6816188A NL 157148 B NL157148 B NL 157148B
Authority
NL
Netherlands
Prior art keywords
semi
guide device
guide
Prior art date
Application number
NL6816188.A
Other languages
English (en)
Dutch (nl)
Other versions
NL6816188A (https=
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of NL6816188A publication Critical patent/NL6816188A/xx
Publication of NL157148B publication Critical patent/NL157148B/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40Crystalline structures
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/01Manufacture or treatment
    • H10D64/011Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0113Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors the conductive layers comprising highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/0112Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/02Manufacture or treatment characterised by using material-based technologies
    • H10D84/03Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401Combinations of FETs or IGBTs with BJTs
    • H10D84/403Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/021Manufacture or treatment of interconnections within wafers or substrates
NL6816188.A 1967-11-14 1968-11-13 Halfgeleiderinrichting. NL157148B (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7315567 1967-11-14
JP8205367 1967-12-21

Publications (2)

Publication Number Publication Date
NL6816188A NL6816188A (https=) 1969-05-19
NL157148B true NL157148B (nl) 1978-06-15

Family

ID=26414310

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6816188.A NL157148B (nl) 1967-11-14 1968-11-13 Halfgeleiderinrichting.

Country Status (8)

Country Link
BE (1) BE723823A (https=)
CH (1) CH509663A (https=)
DE (1) DE1808926B2 (https=)
FR (1) FR1596671A (https=)
GB (1) GB1252293A (https=)
NL (1) NL157148B (https=)
NO (1) NO123436B (https=)
SE (2) SE354544B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2009497B (en) * 1977-10-26 1982-06-30 Tokyo Shibaura Electric Co Method for manufacturing a semiconductor device
IT1110843B (it) * 1978-02-27 1986-01-06 Rca Corp Contatto affondato per dispositivi mos di tipo complementare

Also Published As

Publication number Publication date
FR1596671A (https=) 1970-06-22
CH509663A (fr) 1971-06-30
SE354544B (https=) 1973-03-12
BE723823A (https=) 1969-04-16
DE1808926A1 (de) 1969-07-17
DE1808926B2 (de) 1979-08-02
NL6816188A (https=) 1969-05-19
NO123436B (https=) 1971-11-15
GB1252293A (https=) 1971-11-03
SE361778B (https=) 1973-11-12

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee
NL80 Information provided on patent owner name for an already discontinued patent

Owner name: SONY