NO123436B - - Google Patents

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Publication number
NO123436B
NO123436B NO449268A NO449268A NO123436B NO 123436 B NO123436 B NO 123436B NO 449268 A NO449268 A NO 449268A NO 449268 A NO449268 A NO 449268A NO 123436 B NO123436 B NO 123436B
Authority
NO
Norway
Prior art keywords
console
crack
projection
rod
stated
Prior art date
Application number
NO449268A
Other languages
English (en)
Inventor
I Kobayashi
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to NO120571A priority Critical patent/NO125255B/no
Publication of NO123436B publication Critical patent/NO123436B/no

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0635—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors and diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Bipolar Transistors (AREA)
  • Connection Of Plates (AREA)
  • Semiconductor Integrated Circuits (AREA)

Description

Anordning ved hyller.
Oppfinnelsen vedrører anordning ved hyller med en konsoll som kan festes i ønsket høydestilling på en stender, som har to mot hverandre rettede stort sett plane veggpartier, som mellom seg begrenser en vertikal sprekk. Det som karakteriserer oppfinnelsen er at der på en plan sideflate av konsollen er anordnet et fra sideflaten utstående, langstrakt, stangformet fremspring, hvis lengdeakse over et parti av fremspringet stort sett er parallell med konsollsideflaten, og som fra stenderens side, fortrinnsvis med sneppertvirkning innføres i sprekken med sin lengderetning parallell med sprekkens lengderetning, og anordnet for med et i forhold til konsollsideflatens plan skrått utskytende parti med klemvirkning å gripe bak det ene veggparti av stenderen inntil sprekken.
Ved anordningen ifølge oppfinnelsen oppnås i sammenligning med tidligere hyllekonstruksjoner av lignende art en særdeles enkel og billig sammenkobling mellom konsollen og stenderen, hvilken kobling dessuten tillater innstilling av konsollen i hvilken som helst ønsket høyde-stilling på stenderen og muliggjør en billig utførelse av såvel konsollen som stenderen, og dessuten tillater utførelsen et vakkert utseende.
Oppfinnelsen skal beskrives nærmere i det følgende med henvisning til vedføyde tegning, som viser et utførelseseksempel. Fig. 1 viser fra siden en på en stender festet konsoll. Fig. 2 viser anordningen ifølge fig. 1, sett ovenfra.
Den på tegningen viste hyllekonstruk-sjonen består av en stender S og en kon-
soll K. Stenderen S er rørformet med rek-tangulært tverrsnitt og har i den ene sidevegg en vertikal sprekk 1, som er anbragt omtrent sentralt i omhandlede sidevegg og begrenses således av to plane veggpartier 2 og 3. Konsollen K er L-formet i tverrsnitt med en øvre, horisontal flens 4, på hvilken en ikke vist hylleplate kan anbringes, og en vertikal plate 5, som avtar i bredde i retning fra stenderen S. På platens 5 fra flensen 4 og mot stenderen S vendte sideflate 6 er anordnet et fra sideflaten utstikkende, stangformet utspring i form av en på platen 5 f. eks. ved sveising festet, i tverrsnitt sirkulær stang. Den største de-len 7 av denne stang, som strekker seg langs med konsollsideflaten 6, har en slik diameter at den med sneppertvirkning pas-ser inn i stenderens S sprekk 1, mens stan-gens øvre endeparti 8, som stikker opp over konsollflensen 4, er bøyet skrått ut fra konsollsideflatens 6 plan på slik måte at
stangpartiets 8 lengdeakse i sideprojeksjo-nen i fig. 1 danner omtrent 45° vinkel med flensens 4 horisontalplan og i vertikal-snittet ifølge fig. 2 danner omtrent 20° vinkel med sideflatens 6 vertikalplan.
Ved fastsettelse av konsollen K på stenderen S i ønsket høydestilling innføres først stangpartiet 8 i sprekken 1, hvorpå konsollen svinges til den viste monterings-stillingen, hvorved stangpartiet 7 snepper inn i sprekken 1 og stangpartiet 8 med klemvirkning griper bakom veggdelen 3 inntil sprekken 1. Jo mere konsollen K belastes, desto kraftigere klemmer stangpartiet 8 stenderveggen 3 fast mot konsollsideflaten 6, slik at konsollen sikkert fastholdes på stenderen.
Skjønt den på tegningen viste og foran
beskrevne utførelsesform er særdeles hen-siktsmessig, får oppfinnelsen dog ikke be-traktes som begrenset til denne, for mange
modifikasjoner kan foretas uten å fravike
den oppfinnelsesidé som er angitt i pa-tentpåstandene. Særlig må det vises til
at stenderen kan ha annen tverrsnittsform
enn et rektangel, bare den har to mot hverandre rettede, i hovedsaken plane veggpartier, som mellom seg begrenser en i
det vesentlige vertikal sprekk. Dessuten
kan stangen 7, 8 ha det fra konsollsideflatens plan skrått utstikkende parti 8 anordnet ved stangpartiets 7 nedre ende iste-denfor ved den øvre ende, hvorved stangpartiet 8 må være bøyet slik at det griper
inn i stenderveggen 2 for sikkert å klemme
denne vegg fast mot konsollsiden ved be-lastning av konsollen. Det fra konsollsideflaten utstikkende, stangformede utspring
kan også gis annen utførelse enn en i tverrsnitt sirkulær, på konsollsideflaten 6 fast-satt stang.

Claims (4)

1. Anordning ved hyller med en konsoll (K) som kan festes i ønsket høydestil-ling på en stender (S) som har to mot hverandre rettede stort sett plane veggpartier (2,3), som mellom seg begrenser en vertikal
sprekk (1), karakterisert ved at der på en plan sideflate (6) av konsollen (K) er anordnet et fra sideflaten utstående, langstrakt, stangformet fremspring (7,8), hvis lengdeakse over partiet (7) stort sett er parallell med konsollsideflaten, og som fra stenderens side, fortrinnsvis med sneppertvirkning innføres i sprekken med sin lengderetning parallell med sprekkens lengderetning, og anordnet for med et i forhold til konsollsideflatens (6) plan skrått utskytende parti (8) med klemvirkning å gripe bak det ene veggparti (3) av stenderen inntil sprekken.
2. Anordning som angitt i påstand 1, karakterisert ved at det skrått utstående parti (8) av fremspringet (7, 8) er et endeparti av dette og fortrinnsvis det øvre endeparti av fremspringet.
3. Anordning som angitt i påstand 2, karakterisert ved at det skrått utstående endeparti (8) av fremspringet (7, 8) ligger over eller under konsollens (K) sideflate (6) betraktet i sideoppriss.
4. Anordning som angitt i noen av de foregående påstander, karakterisert ved at fremspringet er utformet av en på konsollens (K) sideflate (6) festet, fortrinnsvis rund stang (7,8).
NO449268A 1967-11-14 1968-11-13 NO123436B (no)

Priority Applications (1)

Application Number Priority Date Filing Date Title
NO120571A NO125255B (no) 1967-11-14 1971-03-31

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7315567 1967-11-14
JP8205367 1967-12-21

Publications (1)

Publication Number Publication Date
NO123436B true NO123436B (no) 1971-11-15

Family

ID=26414310

Family Applications (1)

Application Number Title Priority Date Filing Date
NO449268A NO123436B (no) 1967-11-14 1968-11-13

Country Status (8)

Country Link
BE (1) BE723823A (no)
CH (1) CH509663A (no)
DE (1) DE1808926B2 (no)
FR (1) FR1596671A (no)
GB (1) GB1252293A (no)
NL (1) NL157148B (no)
NO (1) NO123436B (no)
SE (2) SE354544B (no)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2009497B (en) * 1977-10-26 1982-06-30 Tokyo Shibaura Electric Co Method for manufacturing a semiconductor device
IT1110843B (it) * 1978-02-27 1986-01-06 Rca Corp Contatto affondato per dispositivi mos di tipo complementare

Also Published As

Publication number Publication date
NL157148B (nl) 1978-06-15
BE723823A (no) 1969-04-16
SE361778B (no) 1973-11-12
CH509663A (fr) 1971-06-30
GB1252293A (no) 1971-11-03
FR1596671A (no) 1970-06-22
NL6816188A (no) 1969-05-19
SE354544B (no) 1973-03-12
DE1808926A1 (de) 1969-07-17
DE1808926B2 (de) 1979-08-02

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