NL6809931A - - Google Patents

Info

Publication number
NL6809931A
NL6809931A NL6809931A NL6809931A NL6809931A NL 6809931 A NL6809931 A NL 6809931A NL 6809931 A NL6809931 A NL 6809931A NL 6809931 A NL6809931 A NL 6809931A NL 6809931 A NL6809931 A NL 6809931A
Authority
NL
Netherlands
Application number
NL6809931A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6809931A publication Critical patent/NL6809931A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/18Diffraction gratings
    • G02B5/1876Diffractive Fresnel lenses; Zone plates; Kinoforms
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10Screens on or from which an image or pattern is formed, picked up, converted or stored
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/026Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/282Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/40Optical elements or arrangements
    • H10F77/413Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/40Optical elements or arrangements
    • H10F77/42Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/484Refractive light-concentrating means, e.g. lenses
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/819Bodies characterised by their shape, e.g. curved or truncated substrates
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/52PV systems with concentrators

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Light Receiving Elements (AREA)
  • Optical Integrated Circuits (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
NL6809931A 1967-07-13 1968-07-12 NL6809931A (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US65324567A 1967-07-13 1967-07-13

Publications (1)

Publication Number Publication Date
NL6809931A true NL6809931A (enrdf_load_stackoverflow) 1969-01-15

Family

ID=24620064

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6809931A NL6809931A (enrdf_load_stackoverflow) 1967-07-13 1968-07-12

Country Status (6)

Country Link
US (1) US3569997A (enrdf_load_stackoverflow)
DE (1) DE1764639B1 (enrdf_load_stackoverflow)
FR (1) FR1574423A (enrdf_load_stackoverflow)
GB (1) GB1193228A (enrdf_load_stackoverflow)
NL (1) NL6809931A (enrdf_load_stackoverflow)
SE (1) SE341225B (enrdf_load_stackoverflow)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3763372A (en) * 1967-07-13 1973-10-02 Inventors & Investors Inc Zone plate optics monolithically integrated with photoelectric elements
US3668404A (en) * 1970-09-29 1972-06-06 Kurt Lehovec Electro-optical microtransducer comprising diffractive element monolithically integrated with photoelectric device
JPS4824480U (enrdf_load_stackoverflow) * 1971-07-17 1973-03-22
US3831031A (en) * 1972-09-15 1974-08-20 Raytheon Co Zone plate imaging system
US3801785A (en) * 1972-11-01 1974-04-02 Raytheon Co Spatially modulated imaging system
US3902240A (en) * 1972-11-22 1975-09-02 Us Army Integrated cathode and channel plate multiplier
US3969751A (en) * 1974-12-18 1976-07-13 Rca Corporation Light shield for a semiconductor device comprising blackened photoresist
DK79780A (da) * 1980-02-25 1981-08-26 Elektronikcentralen Solcelle med et halvlederkrystal og med en belyst overflade batteri af solceller og fremgangsmaade til fremstilling af samme
US4539482A (en) * 1980-10-09 1985-09-03 Canon Kabushiki Kaisha Reading apparatus
US4419533A (en) * 1982-03-03 1983-12-06 Energy Conversion Devices, Inc. Photovoltaic device having incident radiation directing means for total internal reflection
FR2536911B1 (fr) * 1982-11-30 1987-09-18 Western Electric Co Photodetecteur
US5181220A (en) * 1985-07-16 1993-01-19 Mitsubishi Denki Kabushiki Kaisha Semiconductor light emitting light concentration device
JPS6218076A (ja) * 1985-07-16 1987-01-27 Mitsubishi Electric Corp 半導体発光装置
GB8618345D0 (en) * 1986-07-28 1986-09-03 Purvis A Optical components
US4878735A (en) * 1988-01-15 1989-11-07 Lookingglass Technology, Inc. Optical imaging system using lenticular tone-plate elements
US5360973A (en) * 1990-02-22 1994-11-01 Innova Laboratories, Inc. Millimeter wave beam deflector
JPH05145049A (ja) * 1991-11-19 1993-06-11 Yamatake Honeywell Co Ltd 光電変換装置
US6437762B1 (en) 1995-01-11 2002-08-20 William A. Birdwell Dynamic diffractive optical transform
DE19515369B4 (de) * 1995-05-02 2007-05-24 Colour Control Farbmeßtechnik GmbH Spektralselektive Photodiode mit diffraktiven Strukturen
DE19816309B4 (de) * 1997-04-14 2008-04-03 CiS Institut für Mikrosensorik gGmbH Verfahren zur Direktmontage von Silizium-Sensoren und danach hergestellte Sensoren
DE10352741B4 (de) * 2003-11-12 2012-08-16 Austriamicrosystems Ag Strahlungsdetektierendes optoelektronisches Bauelement, Verfahren zu dessen Herstellung und Verwendung
US7109051B2 (en) * 2004-11-15 2006-09-19 Freescale Semiconductor, Inc. Method of integrating optical devices and electronic devices on an integrated circuit
DE102007023563B4 (de) * 2007-04-16 2014-09-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Integriertes Sensorelement mit Plasmon-Polariton-Resonanz-Effekt, zugehöriger integrierter Farbsensor sowie zugehöriges Herstellungsverfahren
DE102008011793A1 (de) * 2008-02-29 2009-09-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Multispektralsensor

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1561149A (en) * 1923-02-09 1925-11-10 Frederick Franklin Burya Light-projecting lens
US2148314A (en) * 1937-05-19 1939-02-21 Gen Electric Electric lamp
US2921184A (en) * 1950-02-09 1960-01-12 Fruengel Frank System for signaling by light impulses
US3189907A (en) * 1961-08-11 1965-06-15 Lylnan F Van Buskirk Zone plate radio transmission system
US3290539A (en) * 1963-09-16 1966-12-06 Rca Corp Planar p-nu junction light source with reflector means to collimate the emitted light
DE1264513C2 (de) * 1963-11-29 1973-01-25 Texas Instruments Inc Bezugspotentialfreier gleichstromdifferenzverstaerker
US3302051A (en) * 1963-12-12 1967-01-31 Gen Electric Semiconductive alloy light source having improved optical transmissivity
US3443140A (en) * 1965-04-06 1969-05-06 Gen Electric Light emitting semiconductor devices of improved transmission characteristics
US3401266A (en) * 1965-09-20 1968-09-10 Bell Telephone Labor Inc Logic arrangement employing light generating diodes, photosensitive diodes and reflecting grating means
US3462605A (en) * 1965-09-22 1969-08-19 Gen Electric Semiconductor light-emitter and combination light-emitter-photocell wherein the reflector of the light-emitter is comprised of a material different from that of the light-emitter
US3449583A (en) * 1966-02-24 1969-06-10 Texas Instruments Inc Photoconductive electro-optic image intensifier utilizing polarized light

Also Published As

Publication number Publication date
SE341225B (enrdf_load_stackoverflow) 1971-12-20
DE1764639B1 (de) 1971-02-18
FR1574423A (enrdf_load_stackoverflow) 1969-07-11
GB1193228A (en) 1970-05-28
US3569997A (en) 1971-03-09

Similar Documents

Publication Publication Date Title
AU5765369A (enrdf_load_stackoverflow)
AU416737B2 (enrdf_load_stackoverflow)
AU2277767A (enrdf_load_stackoverflow)
AU342066A (enrdf_load_stackoverflow)
AU3151267A (enrdf_load_stackoverflow)
AU2977667A (enrdf_load_stackoverflow)
AU3189468A (enrdf_load_stackoverflow)
AU610966A (enrdf_load_stackoverflow)
BE692922A (enrdf_load_stackoverflow)
BE692654A (enrdf_load_stackoverflow)
BE711540A (enrdf_load_stackoverflow)
BE710605A (enrdf_load_stackoverflow)
BE710173A (enrdf_load_stackoverflow)
BE710049A (enrdf_load_stackoverflow)
BE709685A (enrdf_load_stackoverflow)
BE709568A (enrdf_load_stackoverflow)
BE709202A (enrdf_load_stackoverflow)
BE426053A (enrdf_load_stackoverflow)
BE709183A (enrdf_load_stackoverflow)
BE709054A (enrdf_load_stackoverflow)
BE708897A (enrdf_load_stackoverflow)
BE708802A (enrdf_load_stackoverflow)
BE696228A (enrdf_load_stackoverflow)
BE693070A (enrdf_load_stackoverflow)
BE692779A (enrdf_load_stackoverflow)