FR1574423A - - Google Patents
Info
- Publication number
- FR1574423A FR1574423A FR1574423DA FR1574423A FR 1574423 A FR1574423 A FR 1574423A FR 1574423D A FR1574423D A FR 1574423DA FR 1574423 A FR1574423 A FR 1574423A
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1876—Diffractive Fresnel lenses; Zone plates; Kinoforms
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
- H10F30/282—Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
- H10F77/484—Refractive light-concentrating means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Light Receiving Elements (AREA)
- Optical Integrated Circuits (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US65324567A | 1967-07-13 | 1967-07-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1574423A true FR1574423A (enrdf_load_stackoverflow) | 1969-07-11 |
Family
ID=24620064
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1574423D Expired FR1574423A (enrdf_load_stackoverflow) | 1967-07-13 | 1968-07-12 |
Country Status (6)
Country | Link |
---|---|
US (1) | US3569997A (enrdf_load_stackoverflow) |
DE (1) | DE1764639B1 (enrdf_load_stackoverflow) |
FR (1) | FR1574423A (enrdf_load_stackoverflow) |
GB (1) | GB1193228A (enrdf_load_stackoverflow) |
NL (1) | NL6809931A (enrdf_load_stackoverflow) |
SE (1) | SE341225B (enrdf_load_stackoverflow) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3763372A (en) * | 1967-07-13 | 1973-10-02 | Inventors & Investors Inc | Zone plate optics monolithically integrated with photoelectric elements |
US3668404A (en) * | 1970-09-29 | 1972-06-06 | Kurt Lehovec | Electro-optical microtransducer comprising diffractive element monolithically integrated with photoelectric device |
JPS4824480U (enrdf_load_stackoverflow) * | 1971-07-17 | 1973-03-22 | ||
US3831031A (en) * | 1972-09-15 | 1974-08-20 | Raytheon Co | Zone plate imaging system |
US3801785A (en) * | 1972-11-01 | 1974-04-02 | Raytheon Co | Spatially modulated imaging system |
US3902240A (en) * | 1972-11-22 | 1975-09-02 | Us Army | Integrated cathode and channel plate multiplier |
US3969751A (en) * | 1974-12-18 | 1976-07-13 | Rca Corporation | Light shield for a semiconductor device comprising blackened photoresist |
DK79780A (da) * | 1980-02-25 | 1981-08-26 | Elektronikcentralen | Solcelle med et halvlederkrystal og med en belyst overflade batteri af solceller og fremgangsmaade til fremstilling af samme |
US4539482A (en) * | 1980-10-09 | 1985-09-03 | Canon Kabushiki Kaisha | Reading apparatus |
US4419533A (en) * | 1982-03-03 | 1983-12-06 | Energy Conversion Devices, Inc. | Photovoltaic device having incident radiation directing means for total internal reflection |
FR2536911B1 (fr) * | 1982-11-30 | 1987-09-18 | Western Electric Co | Photodetecteur |
JPS6218076A (ja) * | 1985-07-16 | 1987-01-27 | Mitsubishi Electric Corp | 半導体発光装置 |
US5181220A (en) * | 1985-07-16 | 1993-01-19 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor light emitting light concentration device |
GB8618345D0 (en) * | 1986-07-28 | 1986-09-03 | Purvis A | Optical components |
US4878735A (en) * | 1988-01-15 | 1989-11-07 | Lookingglass Technology, Inc. | Optical imaging system using lenticular tone-plate elements |
US5360973A (en) * | 1990-02-22 | 1994-11-01 | Innova Laboratories, Inc. | Millimeter wave beam deflector |
JPH05145049A (ja) * | 1991-11-19 | 1993-06-11 | Yamatake Honeywell Co Ltd | 光電変換装置 |
US6437762B1 (en) | 1995-01-11 | 2002-08-20 | William A. Birdwell | Dynamic diffractive optical transform |
DE19515369B4 (de) * | 1995-05-02 | 2007-05-24 | Colour Control Farbmeßtechnik GmbH | Spektralselektive Photodiode mit diffraktiven Strukturen |
DE19816309B4 (de) * | 1997-04-14 | 2008-04-03 | CiS Institut für Mikrosensorik gGmbH | Verfahren zur Direktmontage von Silizium-Sensoren und danach hergestellte Sensoren |
DE10352741B4 (de) * | 2003-11-12 | 2012-08-16 | Austriamicrosystems Ag | Strahlungsdetektierendes optoelektronisches Bauelement, Verfahren zu dessen Herstellung und Verwendung |
US7109051B2 (en) * | 2004-11-15 | 2006-09-19 | Freescale Semiconductor, Inc. | Method of integrating optical devices and electronic devices on an integrated circuit |
DE102007023563B4 (de) * | 2007-04-16 | 2014-09-25 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Integriertes Sensorelement mit Plasmon-Polariton-Resonanz-Effekt, zugehöriger integrierter Farbsensor sowie zugehöriges Herstellungsverfahren |
DE102008011793A1 (de) * | 2008-02-29 | 2009-09-24 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Multispektralsensor |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1561149A (en) * | 1923-02-09 | 1925-11-10 | Frederick Franklin Burya | Light-projecting lens |
US2148314A (en) * | 1937-05-19 | 1939-02-21 | Gen Electric | Electric lamp |
US2921184A (en) * | 1950-02-09 | 1960-01-12 | Fruengel Frank | System for signaling by light impulses |
US3189907A (en) * | 1961-08-11 | 1965-06-15 | Lylnan F Van Buskirk | Zone plate radio transmission system |
US3290539A (en) * | 1963-09-16 | 1966-12-06 | Rca Corp | Planar p-nu junction light source with reflector means to collimate the emitted light |
DE1264513C2 (de) * | 1963-11-29 | 1973-01-25 | Texas Instruments Inc | Bezugspotentialfreier gleichstromdifferenzverstaerker |
US3302051A (en) * | 1963-12-12 | 1967-01-31 | Gen Electric | Semiconductive alloy light source having improved optical transmissivity |
US3443140A (en) * | 1965-04-06 | 1969-05-06 | Gen Electric | Light emitting semiconductor devices of improved transmission characteristics |
US3401266A (en) * | 1965-09-20 | 1968-09-10 | Bell Telephone Labor Inc | Logic arrangement employing light generating diodes, photosensitive diodes and reflecting grating means |
US3462605A (en) * | 1965-09-22 | 1969-08-19 | Gen Electric | Semiconductor light-emitter and combination light-emitter-photocell wherein the reflector of the light-emitter is comprised of a material different from that of the light-emitter |
US3449583A (en) * | 1966-02-24 | 1969-06-10 | Texas Instruments Inc | Photoconductive electro-optic image intensifier utilizing polarized light |
-
1967
- 1967-07-13 US US653245A patent/US3569997A/en not_active Expired - Lifetime
-
1968
- 1968-07-09 DE DE19681764639D patent/DE1764639B1/de active Pending
- 1968-07-10 SE SE09483/68A patent/SE341225B/xx unknown
- 1968-07-12 NL NL6809931A patent/NL6809931A/xx unknown
- 1968-07-12 FR FR1574423D patent/FR1574423A/fr not_active Expired
- 1968-07-15 GB GB33680/68A patent/GB1193228A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
SE341225B (enrdf_load_stackoverflow) | 1971-12-20 |
DE1764639B1 (de) | 1971-02-18 |
US3569997A (en) | 1971-03-09 |
NL6809931A (enrdf_load_stackoverflow) | 1969-01-15 |
GB1193228A (en) | 1970-05-28 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |