NL6709879A - - Google Patents

Info

Publication number
NL6709879A
NL6709879A NL6709879A NL6709879A NL6709879A NL 6709879 A NL6709879 A NL 6709879A NL 6709879 A NL6709879 A NL 6709879A NL 6709879 A NL6709879 A NL 6709879A NL 6709879 A NL6709879 A NL 6709879A
Authority
NL
Netherlands
Application number
NL6709879A
Other versions
NL160681C (nl
NL160681B (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6709879A publication Critical patent/NL6709879A/xx
Publication of NL160681B publication Critical patent/NL160681B/xx
Application granted granted Critical
Publication of NL160681C publication Critical patent/NL160681C/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
NL6709879.A 1966-07-22 1967-07-17 Door pulsen bestuurbare halfgeleiderinrichting met twee stabiele geleidingstoestanden voor het tot stand brengen en het onderbreken van een elektrische stroombaan. NL160681C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR70448A FR1497548A (fr) 1966-07-22 1966-07-22 Dispositif semi-conducteur bistable pour courants forts

Publications (3)

Publication Number Publication Date
NL6709879A true NL6709879A (de) 1968-01-23
NL160681B NL160681B (nl) 1979-06-15
NL160681C NL160681C (nl) 1979-11-15

Family

ID=8613874

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6709879.A NL160681C (nl) 1966-07-22 1967-07-17 Door pulsen bestuurbare halfgeleiderinrichting met twee stabiele geleidingstoestanden voor het tot stand brengen en het onderbreken van een elektrische stroombaan.

Country Status (6)

Country Link
US (1) US3465216A (de)
BE (1) BE701300A (de)
DE (1) DE1614844C3 (de)
FR (1) FR1497548A (de)
GB (1) GB1198132A (de)
NL (1) NL160681C (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2147883B1 (de) * 1971-08-05 1977-01-28 Teszner Stanislas
US3737741A (en) * 1971-11-22 1973-06-05 Bell Telephone Labor Inc Semiconductor devices utilizing geometrically controllable current filaments
US4011579A (en) * 1975-04-07 1977-03-08 Hutson Jearld L Semiconductor gate turn-off device
US4086611A (en) * 1975-10-20 1978-04-25 Semiconductor Research Foundation Static induction type thyristor
US4171995A (en) * 1975-10-20 1979-10-23 Semiconductor Research Foundation Epitaxial deposition process for producing an electrostatic induction type thyristor
US4037245A (en) * 1975-11-28 1977-07-19 General Electric Company Electric field controlled diode with a current controlling surface grid
JPS5291658A (en) * 1976-01-29 1977-08-02 Toshiba Corp Semiconductor device
JPS52107780A (en) * 1976-03-08 1977-09-09 Toshiba Corp Semiconductor unit
US4060821A (en) * 1976-06-21 1977-11-29 General Electric Co. Field controlled thyristor with buried grid
US4181542A (en) * 1976-10-25 1980-01-01 Nippon Gakki Seizo Kabushiki Kaisha Method of manufacturing junction field effect transistors
US4331969A (en) * 1976-11-08 1982-05-25 General Electric Company Field-controlled bipolar transistor
US4191602A (en) * 1978-04-24 1980-03-04 General Electric Company Liquid phase epitaxial method of making a high power, vertical channel field effect transistor
US4216488A (en) * 1978-07-31 1980-08-05 Hutson Jearld L Lateral semiconductor diac
JPS6046551B2 (ja) * 1978-08-07 1985-10-16 株式会社日立製作所 半導体スイツチング素子およびその製法
US4937644A (en) * 1979-11-16 1990-06-26 General Electric Company Asymmetrical field controlled thyristor
JPS5917547B2 (ja) * 1981-09-05 1984-04-21 財団法人半導体研究振興会 サイリスタ
US4466173A (en) * 1981-11-23 1984-08-21 General Electric Company Methods for fabricating vertical channel buried grid field controlled devices including field effect transistors and field controlled thyristors utilizing etch and refill techniques
CA1267965A (en) * 1985-07-26 1990-04-17 Wolodymyr Czubatyj Double injection field effect transistors
US4821095A (en) * 1987-03-12 1989-04-11 General Electric Company Insulated gate semiconductor device with extra short grid and method of fabrication
US5319240A (en) * 1993-02-03 1994-06-07 International Business Machines Corporation Three dimensional integrated device and circuit structures

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB948239A (en) * 1962-05-15 1964-01-29 Clevite Corp Method of embedding a metallic grid in a body of semiconductive material

Also Published As

Publication number Publication date
DE1614844C3 (de) 1978-09-14
DE1614844B2 (de) 1978-01-12
DE1614844A1 (de) 1970-12-23
BE701300A (de) 1967-12-18
GB1198132A (en) 1970-07-08
NL160681C (nl) 1979-11-15
US3465216A (en) 1969-09-02
NL160681B (nl) 1979-06-15
FR1497548A (fr) 1967-10-13

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Legal Events

Date Code Title Description
VJC Lapsed due to non-payment of the due maintenance fee for the patent or patent application
NL80 Abbreviated name of patent owner mentioned of already nullified patent

Owner name: JEUMONT SCHN