NL6706868A - - Google Patents
Info
- Publication number
- NL6706868A NL6706868A NL6706868A NL6706868A NL6706868A NL 6706868 A NL6706868 A NL 6706868A NL 6706868 A NL6706868 A NL 6706868A NL 6706868 A NL6706868 A NL 6706868A NL 6706868 A NL6706868 A NL 6706868A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL6706868A NL6706868A (fi) | 1967-05-18 | 1967-05-18 | |
DE19681764282 DE1764282C3 (de) | 1967-05-18 | 1968-05-08 | Halbleiteranordnung mit einer eine Aluminiumschicht tragenden, aus Siliziumoxid bestehenden Schicht |
US727487A US3562604A (en) | 1967-05-18 | 1968-05-08 | Semiconductor device provided with an insulating layer of silicon oxide supporting a layer of aluminum |
AT468268A AT276490B (de) | 1967-05-18 | 1968-05-15 | Halbleitervorrichtung mit einer beispielsweise aus Siliziumoxyd bestehenden Isolierschicht |
GB23120/68A GB1210162A (en) | 1967-05-18 | 1968-05-15 | Semiconductor devices |
CH718668A CH472782A (de) | 1967-05-18 | 1968-05-15 | Halbleitervorrichtung mit einer eine Aluminiumschicht tragenden Schicht |
SE06586/68A SE329444B (fi) | 1967-05-18 | 1968-05-15 | |
FR1576535D FR1576535A (fi) | 1967-05-18 | 1968-05-20 | |
BE715441D BE715441A (fi) | 1967-05-18 | 1968-05-20 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL6706868A NL6706868A (fi) | 1967-05-18 | 1967-05-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL6706868A true NL6706868A (fi) | 1968-11-19 |
Family
ID=19800144
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL6706868A NL6706868A (fi) | 1967-05-18 | 1967-05-18 |
Country Status (8)
Country | Link |
---|---|
US (1) | US3562604A (fi) |
AT (1) | AT276490B (fi) |
BE (1) | BE715441A (fi) |
CH (1) | CH472782A (fi) |
FR (1) | FR1576535A (fi) |
GB (1) | GB1210162A (fi) |
NL (1) | NL6706868A (fi) |
SE (1) | SE329444B (fi) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3837905A (en) * | 1971-09-22 | 1974-09-24 | Gen Motors Corp | Thermal oxidation of silicon |
GB1447866A (en) * | 1972-11-10 | 1976-09-02 | Nat Res Dev | Charge coupled devices and methods of fabricating them |
US3942243A (en) * | 1974-01-25 | 1976-03-09 | Litronix, Inc. | Ohmic contact for semiconductor devices |
US4220706A (en) * | 1978-05-10 | 1980-09-02 | Rca Corporation | Etchant solution containing HF-HnO3 -H2 SO4 -H2 O2 |
US4214018A (en) * | 1978-08-14 | 1980-07-22 | Rca Corporation | Method for making adherent pinhole free aluminum films on pyroelectric and/or piezoelectric substrates |
US4478881A (en) * | 1981-12-28 | 1984-10-23 | Solid State Devices, Inc. | Tungsten barrier contact |
JPS59175763A (ja) * | 1983-03-25 | 1984-10-04 | Fujitsu Ltd | 半導体装置 |
EP0184171A3 (en) * | 1984-12-06 | 1988-09-21 | Solid State Devices, Inc. | Device having improved contact metallization |
IT1213261B (it) * | 1984-12-20 | 1989-12-14 | Sgs Thomson Microelectronics | Dispositivo a semiconduttore con metallizzazione a piu' spessori eprocedimento per la sua fabbricazione. |
JP2921773B2 (ja) * | 1991-04-05 | 1999-07-19 | 三菱電機株式会社 | 半導体装置の配線接続構造およびその製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1053069A (fi) * | 1963-06-28 | |||
US3365628A (en) * | 1965-09-16 | 1968-01-23 | Texas Instruments Inc | Metallic contacts for semiconductor devices |
US3408733A (en) * | 1966-03-22 | 1968-11-05 | Bell Telephone Labor Inc | Low resistance contact to diffused junction germanium transistor |
US3436616A (en) * | 1967-02-07 | 1969-04-01 | Motorola Inc | Ohmic contact consisting of a bilayer of gold and molybdenum over an alloyed region of aluminum-silicon |
-
1967
- 1967-05-18 NL NL6706868A patent/NL6706868A/xx unknown
-
1968
- 1968-05-08 US US727487A patent/US3562604A/en not_active Expired - Lifetime
- 1968-05-15 SE SE06586/68A patent/SE329444B/xx unknown
- 1968-05-15 CH CH718668A patent/CH472782A/de not_active IP Right Cessation
- 1968-05-15 AT AT468268A patent/AT276490B/de active
- 1968-05-15 GB GB23120/68A patent/GB1210162A/en not_active Expired
- 1968-05-20 BE BE715441D patent/BE715441A/xx unknown
- 1968-05-20 FR FR1576535D patent/FR1576535A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB1210162A (en) | 1970-10-28 |
DE1764282B2 (de) | 1976-07-01 |
DE1764282A1 (de) | 1971-06-16 |
FR1576535A (fi) | 1969-08-01 |
SE329444B (fi) | 1970-10-12 |
CH472782A (de) | 1969-05-15 |
AT276490B (de) | 1969-11-25 |
US3562604A (en) | 1971-02-09 |
BE715441A (fi) | 1968-11-20 |