NL6706868A - - Google Patents

Info

Publication number
NL6706868A
NL6706868A NL6706868A NL6706868A NL6706868A NL 6706868 A NL6706868 A NL 6706868A NL 6706868 A NL6706868 A NL 6706868A NL 6706868 A NL6706868 A NL 6706868A NL 6706868 A NL6706868 A NL 6706868A
Authority
NL
Netherlands
Application number
NL6706868A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to NL6706868A priority Critical patent/NL6706868A/xx
Priority to DE19681764282 priority patent/DE1764282C3/de
Priority to US727487A priority patent/US3562604A/en
Priority to SE06586/68A priority patent/SE329444B/xx
Priority to CH718668A priority patent/CH472782A/de
Priority to AT468268A priority patent/AT276490B/de
Priority to GB23120/68A priority patent/GB1210162A/en
Priority to BE715441D priority patent/BE715441A/xx
Priority to FR1576535D priority patent/FR1576535A/fr
Publication of NL6706868A publication Critical patent/NL6706868A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Bipolar Transistors (AREA)
NL6706868A 1967-05-18 1967-05-18 NL6706868A (enrdf_load_stackoverflow)

Priority Applications (9)

Application Number Priority Date Filing Date Title
NL6706868A NL6706868A (enrdf_load_stackoverflow) 1967-05-18 1967-05-18
DE19681764282 DE1764282C3 (de) 1967-05-18 1968-05-08 Halbleiteranordnung mit einer eine Aluminiumschicht tragenden, aus Siliziumoxid bestehenden Schicht
US727487A US3562604A (en) 1967-05-18 1968-05-08 Semiconductor device provided with an insulating layer of silicon oxide supporting a layer of aluminum
SE06586/68A SE329444B (enrdf_load_stackoverflow) 1967-05-18 1968-05-15
CH718668A CH472782A (de) 1967-05-18 1968-05-15 Halbleitervorrichtung mit einer eine Aluminiumschicht tragenden Schicht
AT468268A AT276490B (de) 1967-05-18 1968-05-15 Halbleitervorrichtung mit einer beispielsweise aus Siliziumoxyd bestehenden Isolierschicht
GB23120/68A GB1210162A (en) 1967-05-18 1968-05-15 Semiconductor devices
BE715441D BE715441A (enrdf_load_stackoverflow) 1967-05-18 1968-05-20
FR1576535D FR1576535A (enrdf_load_stackoverflow) 1967-05-18 1968-05-20

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6706868A NL6706868A (enrdf_load_stackoverflow) 1967-05-18 1967-05-18

Publications (1)

Publication Number Publication Date
NL6706868A true NL6706868A (enrdf_load_stackoverflow) 1968-11-19

Family

ID=19800144

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6706868A NL6706868A (enrdf_load_stackoverflow) 1967-05-18 1967-05-18

Country Status (8)

Country Link
US (1) US3562604A (enrdf_load_stackoverflow)
AT (1) AT276490B (enrdf_load_stackoverflow)
BE (1) BE715441A (enrdf_load_stackoverflow)
CH (1) CH472782A (enrdf_load_stackoverflow)
FR (1) FR1576535A (enrdf_load_stackoverflow)
GB (1) GB1210162A (enrdf_load_stackoverflow)
NL (1) NL6706868A (enrdf_load_stackoverflow)
SE (1) SE329444B (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3837905A (en) * 1971-09-22 1974-09-24 Gen Motors Corp Thermal oxidation of silicon
GB1447866A (en) * 1972-11-10 1976-09-02 Nat Res Dev Charge coupled devices and methods of fabricating them
US3942243A (en) * 1974-01-25 1976-03-09 Litronix, Inc. Ohmic contact for semiconductor devices
US4220706A (en) * 1978-05-10 1980-09-02 Rca Corporation Etchant solution containing HF-HnO3 -H2 SO4 -H2 O2
US4214018A (en) * 1978-08-14 1980-07-22 Rca Corporation Method for making adherent pinhole free aluminum films on pyroelectric and/or piezoelectric substrates
US4478881A (en) * 1981-12-28 1984-10-23 Solid State Devices, Inc. Tungsten barrier contact
JPS59175763A (ja) * 1983-03-25 1984-10-04 Fujitsu Ltd 半導体装置
EP0184171A3 (en) * 1984-12-06 1988-09-21 Solid State Devices, Inc. Device having improved contact metallization
IT1213261B (it) * 1984-12-20 1989-12-14 Sgs Thomson Microelectronics Dispositivo a semiconduttore con metallizzazione a piu' spessori eprocedimento per la sua fabbricazione.
JP2921773B2 (ja) * 1991-04-05 1999-07-19 三菱電機株式会社 半導体装置の配線接続構造およびその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1053069A (enrdf_load_stackoverflow) * 1963-06-28
US3365628A (en) * 1965-09-16 1968-01-23 Texas Instruments Inc Metallic contacts for semiconductor devices
US3408733A (en) * 1966-03-22 1968-11-05 Bell Telephone Labor Inc Low resistance contact to diffused junction germanium transistor
US3436616A (en) * 1967-02-07 1969-04-01 Motorola Inc Ohmic contact consisting of a bilayer of gold and molybdenum over an alloyed region of aluminum-silicon

Also Published As

Publication number Publication date
FR1576535A (enrdf_load_stackoverflow) 1969-08-01
CH472782A (de) 1969-05-15
DE1764282A1 (de) 1971-06-16
BE715441A (enrdf_load_stackoverflow) 1968-11-20
DE1764282B2 (de) 1976-07-01
SE329444B (enrdf_load_stackoverflow) 1970-10-12
GB1210162A (en) 1970-10-28
US3562604A (en) 1971-02-09
AT276490B (de) 1969-11-25

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