NL6706868A - - Google Patents

Info

Publication number
NL6706868A
NL6706868A NL6706868A NL6706868A NL6706868A NL 6706868 A NL6706868 A NL 6706868A NL 6706868 A NL6706868 A NL 6706868A NL 6706868 A NL6706868 A NL 6706868A NL 6706868 A NL6706868 A NL 6706868A
Authority
NL
Netherlands
Application number
NL6706868A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to NL6706868A priority Critical patent/NL6706868A/xx
Priority to DE19681764282 priority patent/DE1764282C3/de
Priority to US727487A priority patent/US3562604A/en
Priority to AT468268A priority patent/AT276490B/de
Priority to CH718668A priority patent/CH472782A/de
Priority to SE06586/68A priority patent/SE329444B/xx
Priority to GB23120/68A priority patent/GB1210162A/en
Priority to FR1576535D priority patent/FR1576535A/fr
Priority to BE715441D priority patent/BE715441A/xx
Publication of NL6706868A publication Critical patent/NL6706868A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
NL6706868A 1967-05-18 1967-05-18 NL6706868A (de)

Priority Applications (9)

Application Number Priority Date Filing Date Title
NL6706868A NL6706868A (de) 1967-05-18 1967-05-18
DE19681764282 DE1764282C3 (de) 1967-05-18 1968-05-08 Halbleiteranordnung mit einer eine Aluminiumschicht tragenden, aus Siliziumoxid bestehenden Schicht
US727487A US3562604A (en) 1967-05-18 1968-05-08 Semiconductor device provided with an insulating layer of silicon oxide supporting a layer of aluminum
AT468268A AT276490B (de) 1967-05-18 1968-05-15 Halbleitervorrichtung mit einer beispielsweise aus Siliziumoxyd bestehenden Isolierschicht
CH718668A CH472782A (de) 1967-05-18 1968-05-15 Halbleitervorrichtung mit einer eine Aluminiumschicht tragenden Schicht
SE06586/68A SE329444B (de) 1967-05-18 1968-05-15
GB23120/68A GB1210162A (en) 1967-05-18 1968-05-15 Semiconductor devices
FR1576535D FR1576535A (de) 1967-05-18 1968-05-20
BE715441D BE715441A (de) 1967-05-18 1968-05-20

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6706868A NL6706868A (de) 1967-05-18 1967-05-18

Publications (1)

Publication Number Publication Date
NL6706868A true NL6706868A (de) 1968-11-19

Family

ID=19800144

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6706868A NL6706868A (de) 1967-05-18 1967-05-18

Country Status (8)

Country Link
US (1) US3562604A (de)
AT (1) AT276490B (de)
BE (1) BE715441A (de)
CH (1) CH472782A (de)
FR (1) FR1576535A (de)
GB (1) GB1210162A (de)
NL (1) NL6706868A (de)
SE (1) SE329444B (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3837905A (en) * 1971-09-22 1974-09-24 Gen Motors Corp Thermal oxidation of silicon
GB1447866A (en) * 1972-11-10 1976-09-02 Nat Res Dev Charge coupled devices and methods of fabricating them
US3942243A (en) * 1974-01-25 1976-03-09 Litronix, Inc. Ohmic contact for semiconductor devices
US4220706A (en) * 1978-05-10 1980-09-02 Rca Corporation Etchant solution containing HF-HnO3 -H2 SO4 -H2 O2
US4214018A (en) * 1978-08-14 1980-07-22 Rca Corporation Method for making adherent pinhole free aluminum films on pyroelectric and/or piezoelectric substrates
US4478881A (en) * 1981-12-28 1984-10-23 Solid State Devices, Inc. Tungsten barrier contact
JPS59175763A (ja) * 1983-03-25 1984-10-04 Fujitsu Ltd 半導体装置
EP0184171A3 (de) * 1984-12-06 1988-09-21 Solid State Devices, Inc. Bauelement mit Kontaktmetallisierung
IT1213261B (it) * 1984-12-20 1989-12-14 Sgs Thomson Microelectronics Dispositivo a semiconduttore con metallizzazione a piu' spessori eprocedimento per la sua fabbricazione.
JP2921773B2 (ja) * 1991-04-05 1999-07-19 三菱電機株式会社 半導体装置の配線接続構造およびその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1053069A (de) * 1963-06-28
US3365628A (en) * 1965-09-16 1968-01-23 Texas Instruments Inc Metallic contacts for semiconductor devices
US3408733A (en) * 1966-03-22 1968-11-05 Bell Telephone Labor Inc Low resistance contact to diffused junction germanium transistor
US3436616A (en) * 1967-02-07 1969-04-01 Motorola Inc Ohmic contact consisting of a bilayer of gold and molybdenum over an alloyed region of aluminum-silicon

Also Published As

Publication number Publication date
US3562604A (en) 1971-02-09
DE1764282A1 (de) 1971-06-16
AT276490B (de) 1969-11-25
SE329444B (de) 1970-10-12
CH472782A (de) 1969-05-15
BE715441A (de) 1968-11-20
GB1210162A (en) 1970-10-28
FR1576535A (de) 1969-08-01
DE1764282B2 (de) 1976-07-01

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