NL6703609A - - Google Patents

Info

Publication number
NL6703609A
NL6703609A NL6703609A NL6703609A NL6703609A NL 6703609 A NL6703609 A NL 6703609A NL 6703609 A NL6703609 A NL 6703609A NL 6703609 A NL6703609 A NL 6703609A NL 6703609 A NL6703609 A NL 6703609A
Authority
NL
Netherlands
Application number
NL6703609A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL666617544A priority Critical patent/NL143436B/xx
Application filed filed Critical
Priority to NL6703609A priority patent/NL6703609A/xx
Priority to NO170923A priority patent/NO123641B/no
Priority to CH1743167A priority patent/CH520076A/de
Priority to GB56404/67D priority patent/GB1213156A/en
Priority to DE1667657A priority patent/DE1667657C3/de
Priority to ES348181A priority patent/ES348181A1/es
Priority to DK621167AA priority patent/DK122220B/da
Priority to AT1119067A priority patent/AT294772B/de
Priority to BE707877D priority patent/BE707877A/xx
Priority to JP7960567A priority patent/JPS5411280B1/ja
Priority to FR132062A priority patent/FR1547963A/fr
Priority to SE17117/67A priority patent/SE334868B/xx
Priority to CH324268A priority patent/CH505647A/de
Priority to DE19681719493 priority patent/DE1719493A1/de
Priority to GB00592/68A priority patent/GB1213867A/en
Priority to AT213068A priority patent/AT299124B/de
Priority to ES351307A priority patent/ES351307A1/es
Priority to US00711349A priority patent/US3721732A/en
Priority to FR1556128D priority patent/FR1556128A/fr
Priority to BE711956D priority patent/BE711956A/xx
Publication of NL6703609A publication Critical patent/NL6703609A/xx
Priority to DE19741794382 priority patent/DE1794382A1/de
Priority to US05/599,087 priority patent/US4013503A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D39/00—Filtering material for liquid or gaseous fluids
    • B01D39/02—Loose filtering material, e.g. loose fibres
    • B01D39/06—Inorganic material, e.g. asbestos fibres, glass beads or fibres
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • General Chemical & Material Sciences (AREA)
NL6703609A 1966-12-14 1967-03-08 NL6703609A (cg-RX-API-DMAC10.html)

Priority Applications (23)

Application Number Priority Date Filing Date Title
NL666617544A NL143436B (nl) 1966-12-14 1966-12-14 Werkwijze voor het vervaardigen van draadvormige siliciumcarbide kristallen en voorwerpen geheel of voor een deel bestaande uit deze kristallen.
NL6703609A NL6703609A (cg-RX-API-DMAC10.html) 1967-03-08 1967-03-08
NO170923A NO123641B (cg-RX-API-DMAC10.html) 1966-12-14 1967-12-11
CH1743167A CH520076A (de) 1966-12-14 1967-12-11 Verfahren zur Herstellung draht- oder bandförmiger Siliziumkarbidkristalle
GB56404/67D GB1213156A (en) 1966-12-14 1967-12-12 Manufacturing filamentary silicon carbide crystals
DE1667657A DE1667657C3 (de) 1966-12-14 1967-12-12 Verfahren zur Herstellung von Siliciumkarbidwhiskers
ES348181A ES348181A1 (es) 1966-12-14 1967-12-12 Un metodo de manufacturar cristales de carburo de silicio en filamentos.
DK621167AA DK122220B (da) 1966-12-14 1967-12-12 Fremgangsmåde til fremstilling af filamentformede siliciumcarbidkrystaller.
AT1119067A AT294772B (de) 1966-12-14 1967-12-12 Verfahren zur Herstellung drahtförmiger Siliziumkarbidkristalle
BE707877D BE707877A (cg-RX-API-DMAC10.html) 1966-12-14 1967-12-12
FR132062A FR1547963A (fr) 1966-12-14 1967-12-13 Procédé de fabrication de cristaux filiformes de carbure de silicium et objets constitués au moins partiellement par ces cristaux
JP7960567A JPS5411280B1 (cg-RX-API-DMAC10.html) 1966-12-14 1967-12-13
SE17117/67A SE334868B (cg-RX-API-DMAC10.html) 1966-12-14 1967-12-13
CH324268A CH505647A (de) 1966-12-14 1968-03-05 Verfahren zur Herstellung von aus Siliciumkarbid-Einkristallen bestehenden Haarkristallen kreisförmigen Querschnitts
DE19681719493 DE1719493A1 (de) 1966-12-14 1968-03-05 Verfahren zur Herstellung von drahtfoermigen Koerpern (Haarkristallen) kreisfoermigen Querschnitts,die aus Siliciumcarbid-Einkristallen bestehen,und Gegenstaende aus Siliciumcarbid-Haarkristallen kreisfoermigen Querschnitts
GB00592/68A GB1213867A (en) 1966-12-14 1968-03-05 Method of manufacturing silicon carbide single crystal filaments
AT213068A AT299124B (de) 1966-12-14 1968-03-05 Verfahren zur Herstellung von drahtförmigen Körpern, sogenannten Haarkristallen, kreisförmigen Querschnittes, die aus Siliziumkarbid-Einkristallen bestehen
ES351307A ES351307A1 (es) 1966-12-14 1968-03-06 Un metodo de manufacturar cuerpos en filamentos.
US00711349A US3721732A (en) 1966-12-14 1968-03-07 Method of manufacturing filamentary bodies of circular cross-section consisting of silicon carbide single crystals and filamentary bodies obtained by said method
FR1556128D FR1556128A (cg-RX-API-DMAC10.html) 1966-12-14 1968-03-08
BE711956D BE711956A (cg-RX-API-DMAC10.html) 1966-12-14 1968-03-08
DE19741794382 DE1794382A1 (de) 1966-12-14 1974-01-03 Versteifung von gegenstaenden aus kunststoff, glas oder metall
US05/599,087 US4013503A (en) 1966-12-14 1975-07-25 Filamentary silicon carbide crystals by VLS growth in molten iron

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6703609A NL6703609A (cg-RX-API-DMAC10.html) 1967-03-08 1967-03-08

Publications (1)

Publication Number Publication Date
NL6703609A true NL6703609A (cg-RX-API-DMAC10.html) 1968-09-09

Family

ID=19799498

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6703609A NL6703609A (cg-RX-API-DMAC10.html) 1966-12-14 1967-03-08

Country Status (1)

Country Link
NL (1) NL6703609A (cg-RX-API-DMAC10.html)

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