NL6605087A - - Google Patents

Info

Publication number
NL6605087A
NL6605087A NL6605087A NL6605087A NL6605087A NL 6605087 A NL6605087 A NL 6605087A NL 6605087 A NL6605087 A NL 6605087A NL 6605087 A NL6605087 A NL 6605087A NL 6605087 A NL6605087 A NL 6605087A
Authority
NL
Netherlands
Application number
NL6605087A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6605087A publication Critical patent/NL6605087A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
NL6605087A 1965-04-15 1966-04-15 NL6605087A (cg-RX-API-DMAC7.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US448506A US3355637A (en) 1965-04-15 1965-04-15 Insulated-gate field effect triode with an insulator having the same atomic spacing as the channel

Publications (1)

Publication Number Publication Date
NL6605087A true NL6605087A (cg-RX-API-DMAC7.html) 1966-10-17

Family

ID=23780562

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6605087A NL6605087A (cg-RX-API-DMAC7.html) 1965-04-15 1966-04-15

Country Status (6)

Country Link
US (1) US3355637A (cg-RX-API-DMAC7.html)
JP (1) JPS497390B1 (cg-RX-API-DMAC7.html)
DE (1) DE1564524A1 (cg-RX-API-DMAC7.html)
ES (1) ES325504A1 (cg-RX-API-DMAC7.html)
GB (1) GB1134656A (cg-RX-API-DMAC7.html)
NL (1) NL6605087A (cg-RX-API-DMAC7.html)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3544399A (en) * 1966-10-26 1970-12-01 Hughes Aircraft Co Insulated gate field-effect transistor (igfet) with semiconductor gate electrode
US3475234A (en) * 1967-03-27 1969-10-28 Bell Telephone Labor Inc Method for making mis structures
US3576478A (en) * 1969-07-22 1971-04-27 Philco Ford Corp Igfet comprising n-type silicon substrate, silicon oxide gate insulator and p-type polycrystalline silicon gate electrode
BE756782A (fr) * 1969-10-03 1971-03-01 Western Electric Co Organe de memoire ayant une structure comportant deux couches isolantesentre un semiconducteur et une couche de metal
US3673471A (en) * 1970-10-08 1972-06-27 Fairchild Camera Instr Co Doped semiconductor electrodes for mos type devices
US4032950A (en) * 1974-12-06 1977-06-28 Hughes Aircraft Company Liquid phase epitaxial process for growing semi-insulating gaas layers
DE3174485D1 (en) * 1980-12-23 1986-05-28 Nat Res Dev Field effect transistors
GB9116341D0 (en) * 1991-07-29 1991-09-11 Hitachi Europ Ltd Lt-gaas semiconductor device
US6949443B2 (en) * 2003-10-10 2005-09-27 Taiwan Semiconductor Manufacturing Company High performance semiconductor devices fabricated with strain-induced processes and methods for making same
JP6290342B1 (ja) 2016-09-07 2018-03-07 Ntn株式会社 左右輪駆動装置の制御装置
JP6328721B2 (ja) 2016-10-12 2018-05-23 Ntn株式会社 駆動源制御装置およびこの駆動源制御装置を備えた車両
WO2021075415A1 (ja) 2019-10-16 2021-04-22 三菱自動車工業株式会社 電動車両のモータ制御装置
JP7401796B2 (ja) 2019-12-24 2023-12-20 テイ・エス テック株式会社 乗物用シート
JP1693552S (cg-RX-API-DMAC7.html) * 2021-04-09 2021-08-23
JP1693553S (cg-RX-API-DMAC7.html) * 2021-04-09 2021-08-23

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3263095A (en) * 1963-12-26 1966-07-26 Ibm Heterojunction surface channel transistors

Also Published As

Publication number Publication date
US3355637A (en) 1967-11-28
ES325504A1 (es) 1967-02-16
JPS497390B1 (cg-RX-API-DMAC7.html) 1974-02-20
DE1564524B2 (cg-RX-API-DMAC7.html) 1970-11-12
GB1134656A (en) 1968-11-27
DE1564524A1 (de) 1970-01-22

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