NL6605087A - - Google Patents

Info

Publication number
NL6605087A
NL6605087A NL6605087A NL6605087A NL6605087A NL 6605087 A NL6605087 A NL 6605087A NL 6605087 A NL6605087 A NL 6605087A NL 6605087 A NL6605087 A NL 6605087A NL 6605087 A NL6605087 A NL 6605087A
Authority
NL
Netherlands
Application number
NL6605087A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6605087A publication Critical patent/NL6605087A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/32Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36Unipolar devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Element Separation (AREA)
NL6605087A 1965-04-15 1966-04-15 NL6605087A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US448506A US3355637A (en) 1965-04-15 1965-04-15 Insulated-gate field effect triode with an insulator having the same atomic spacing as the channel

Publications (1)

Publication Number Publication Date
NL6605087A true NL6605087A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1966-10-17

Family

ID=23780562

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6605087A NL6605087A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1965-04-15 1966-04-15

Country Status (6)

Country Link
US (1) US3355637A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS497390B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE1564524A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
ES (1) ES325504A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1134656A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL6605087A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3544399A (en) * 1966-10-26 1970-12-01 Hughes Aircraft Co Insulated gate field-effect transistor (igfet) with semiconductor gate electrode
US3475234A (en) * 1967-03-27 1969-10-28 Bell Telephone Labor Inc Method for making mis structures
US3576478A (en) * 1969-07-22 1971-04-27 Philco Ford Corp Igfet comprising n-type silicon substrate, silicon oxide gate insulator and p-type polycrystalline silicon gate electrode
BE756782A (fr) * 1969-10-03 1971-03-01 Western Electric Co Organe de memoire ayant une structure comportant deux couches isolantesentre un semiconducteur et une couche de metal
US3673471A (en) * 1970-10-08 1972-06-27 Fairchild Camera Instr Co Doped semiconductor electrodes for mos type devices
US4032950A (en) * 1974-12-06 1977-06-28 Hughes Aircraft Company Liquid phase epitaxial process for growing semi-insulating gaas layers
DE3174485D1 (en) * 1980-12-23 1986-05-28 Nat Res Dev Field effect transistors
GB9116341D0 (en) * 1991-07-29 1991-09-11 Hitachi Europ Ltd Lt-gaas semiconductor device
US6949443B2 (en) * 2003-10-10 2005-09-27 Taiwan Semiconductor Manufacturing Company High performance semiconductor devices fabricated with strain-induced processes and methods for making same
JP6290342B1 (ja) 2016-09-07 2018-03-07 Ntn株式会社 左右輪駆動装置の制御装置
JP6328721B2 (ja) 2016-10-12 2018-05-23 Ntn株式会社 駆動源制御装置およびこの駆動源制御装置を備えた車両
CN114502414B (zh) 2019-10-16 2023-10-13 三菱自动车工业株式会社 电动车辆的电机控制装置
EP4082843A4 (en) 2019-12-24 2024-02-07 TS Tech Co., Ltd. VEHICLE SEAT
JP1693552S (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 2021-04-09 2021-08-23
JP1693553S (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 2021-04-09 2021-08-23

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3263095A (en) * 1963-12-26 1966-07-26 Ibm Heterojunction surface channel transistors

Also Published As

Publication number Publication date
DE1564524A1 (de) 1970-01-22
ES325504A1 (es) 1967-02-16
JPS497390B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1974-02-20
DE1564524B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1970-11-12
GB1134656A (en) 1968-11-27
US3355637A (en) 1967-11-28

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