NL6405390A - - Google Patents

Info

Publication number
NL6405390A
NL6405390A NL6405390A NL6405390A NL6405390A NL 6405390 A NL6405390 A NL 6405390A NL 6405390 A NL6405390 A NL 6405390A NL 6405390 A NL6405390 A NL 6405390A NL 6405390 A NL6405390 A NL 6405390A
Authority
NL
Netherlands
Application number
NL6405390A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6405390A publication Critical patent/NL6405390A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/02—Zone-melting with a solvent, e.g. travelling solvent process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
NL6405390A 1963-05-14 1964-05-14 NL6405390A (Direct)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB19029/63A GB1034503A (en) 1963-05-14 1963-05-14 Improvements in or relating to the production of crystalline material

Publications (1)

Publication Number Publication Date
NL6405390A true NL6405390A (Direct) 1964-11-16

Family

ID=10122567

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6405390A NL6405390A (Direct) 1963-05-14 1964-05-14

Country Status (5)

Country Link
US (1) US3378409A (Direct)
DE (1) DE1298085B (Direct)
FR (1) FR1397605A (Direct)
GB (1) GB1034503A (Direct)
NL (1) NL6405390A (Direct)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1095143A (en) * 1964-03-31 1967-12-13 Nat Res Dev Improvements in or relating to the production of single crystal material
US3935058A (en) * 1971-07-15 1976-01-27 Preussag Aktiengesellschaft Zone melting process
SE372753B (Direct) * 1972-08-04 1975-01-13 Boliden Ab
FR2358021A1 (fr) * 1976-07-09 1978-02-03 Radiotechnique Compelec Procede de depot epitaxique d'un semi-conducteur par polarisation electrique d'une phase liquide
GB2090465B (en) * 1980-12-29 1985-11-13 Gen Electric Production of p-n junctions by the electromigration method
US4549912A (en) * 1981-06-11 1985-10-29 General Electric Company Anode and cathode connections for the practice of electromigration
US4381598A (en) * 1981-06-11 1983-05-03 General Electric Company Method of making anode and cathode connections for electromigration
US4534100A (en) * 1982-06-28 1985-08-13 The United States Of America As Represented By The Secretary Of The Air Force Electrical method of making conductive paths in silicon
US4873063A (en) * 1986-01-06 1989-10-10 Bleil Carl E Apparatus for zone regrowth of crystal ribbons
US4775443A (en) * 1986-02-06 1988-10-04 Bleil Carl E Method and apparatus for zone regrowth of crystal ribbons from bulk material
US4749438A (en) * 1986-01-06 1988-06-07 Bleil Carl E Method and apparatus for zone recrystallization
JP4701738B2 (ja) * 2005-02-17 2011-06-15 株式会社Sumco 単結晶の引上げ方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2813048A (en) * 1954-06-24 1957-11-12 Bell Telephone Labor Inc Temperature gradient zone-melting
AT189229B (de) * 1954-06-24 1957-03-11 Western Electric Co Verfahren zur Erzeugung zumindest einer in einem Körper fortschreitenden Zwischenfläche von fester und flüssiger Phase
US3046164A (en) * 1955-10-18 1962-07-24 Honeywell Regulator Co Metal purification procedures
DE1074273B (de) * 1956-12-27 1960-01-28 Western Electric Company Incorporated New York N Y (V St A) (V St A) I Verfahren zum Zonenschmelzen elektrisch leitender Korper durch unmittelbares galvanisches Erwarmen
BE562932A (Direct) * 1957-01-23
US3046100A (en) * 1958-01-20 1962-07-24 Du Pont Zone melting of semiconductive material
US2998334A (en) * 1958-03-07 1961-08-29 Transitron Electronic Corp Method of making transistors
US2996456A (en) * 1958-09-08 1961-08-15 Transitron Electronic Corp Method of growing silicon carbide crystals
US3205101A (en) * 1963-06-13 1965-09-07 Tyco Laboratories Inc Vacuum cleaning and vapor deposition of solvent material prior to effecting traveling solvent process

Also Published As

Publication number Publication date
US3378409A (en) 1968-04-16
DE1298085B (de) 1969-06-26
FR1397605A (fr) 1965-04-30
GB1034503A (en) 1966-06-29

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