NL295918A - - Google Patents

Info

Publication number
NL295918A
NL295918A NL295918DA NL295918A NL 295918 A NL295918 A NL 295918A NL 295918D A NL295918D A NL 295918DA NL 295918 A NL295918 A NL 295918A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL295918A publication Critical patent/NL295918A/xx
Priority claimed from DES80682A external-priority patent/DE1238987B/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B21/00—Unidirectional solidification of eutectic materials
    • C30B21/02—Unidirectional solidification of eutectic materials by normal casting or gradient freezing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B21/00—Unidirectional solidification of eutectic materials
    • C30B21/04—Unidirectional solidification of eutectic materials by zone-melting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/40—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4
    • H01F1/401—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted
    • H01F1/404—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted of III-V type, e.g. In1-x Mnx As
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/40—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4
    • H01F1/401—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted
    • H01F1/405—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted of IV type, e.g. Ge1-xMnx
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/80—Constructional details
    • H10N52/85—Magnetic active materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/917—Magnetic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S420/00—Alloys or metallic compositions
    • Y10S420/903—Semiconductive
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/929—Eutectic semiconductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12465—All metal or with adjacent metals having magnetic properties, or preformed fiber orientation coordinate with shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12486—Laterally noncoextensive components [e.g., embedded, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
NL295918D 1962-07-31 NL295918A (US20080094685A1-20080424-C00004.png)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DES80682A DE1238987B (de) 1961-08-10 1962-07-31 Halbleiterkoerper fuer Bauelemente mit richtungsabhaengigen elektrischen Eigenschaften
DES0084738 1963-04-18
DES84816A DE1281578B (de) 1962-07-31 1963-04-23 Sonde zum Erfassen magnetischer Felder unter Verwendung eines Halbleiterkoerpers fuer Bauelemente mit richtungsabhaengigen elektrischen Eigenschaften

Publications (1)

Publication Number Publication Date
NL295918A true NL295918A (US20080094685A1-20080424-C00004.png)

Family

ID=27212777

Family Applications (1)

Application Number Title Priority Date Filing Date
NL295918D NL295918A (US20080094685A1-20080424-C00004.png) 1962-07-31

Country Status (3)

Country Link
US (2) US3226225A (US20080094685A1-20080424-C00004.png)
DE (1) DE1281578B (US20080094685A1-20080424-C00004.png)
NL (1) NL295918A (US20080094685A1-20080424-C00004.png)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3335384A (en) * 1967-08-08 Rotary resistor arrangement employ- ing a galvanomagnetic semiconduc- tor field plate
US3331045A (en) * 1967-07-11 Galvano-magnetic semiconductor field plate
DE1288651B (de) * 1963-06-28 1969-02-06 Siemens Ag Anordnung elektrischer Dipole fuer Wellenlaengen unterhalb 1 mm und Verfahren zur Herstellung einer derartigen Anordnung
DE1214807B (de) * 1963-12-18 1966-04-21 Siemens Ag Halbleiterphotoelement
DE1244417B (de) * 1964-11-05 1967-07-13 Magnetfab Bonn Gmbh Metallischer Dauermagnetwerkstoff
DE1260047B (de) * 1965-03-24 1968-02-01 Siemens Ag Starkstrom-Kryotron
US3402979A (en) * 1965-03-30 1968-09-24 Bell Telephone Labor Inc Light polarizer
US3434827A (en) * 1965-07-16 1969-03-25 United Aircraft Corp Anisotropic monotectic alloys and process for making the same
US3765956A (en) * 1965-09-28 1973-10-16 C Li Solid-state device
US4371406A (en) * 1965-09-28 1983-02-01 Li Chou H Solid-state device
US3357872A (en) * 1965-10-18 1967-12-12 Texas Instruments Inc Semiconductor devices and methods for making same
US3421952A (en) * 1966-02-02 1969-01-14 Texas Instruments Inc Method of making high resistivity group iii-v compounds and alloys doped with iron from an iron-arsenide source
US3542541A (en) * 1966-03-15 1970-11-24 United Aircraft Corp Whisker reinforced alloys and method of making the same
US3447976A (en) * 1966-06-17 1969-06-03 Westinghouse Electric Corp Formation of heterojunction devices by epitaxial growth from solution
DE1665750C3 (de) * 1966-09-23 1974-02-21 Siemens Ag, 1000 Berlin U. 8000 Muenchen Magnetfeldabhängiger Widerstand mit streifenförmigem Metallraster zum Kurzschließen der Hallspannung
US3579820A (en) * 1969-06-24 1971-05-25 Siemens Ag Method of making galvanomagnetic resistor utilizing grid for short-circuiting hall voltage
GB1311659A (en) * 1969-07-30 1973-03-28 Secr Defence Electrical device substrates
BE760094A (fr) * 1969-12-09 1971-06-09 Siemens Ag Dispositif detecteur de rayonnement infra-rouge et son procede de fabrication
BE789873A (fr) * 1971-10-11 1973-04-09 Philips Nv Dispositif permettant de convertir un parametre d'entree en un parametre de sortie
US3837150A (en) * 1972-12-08 1974-09-24 Torit Corp Filtering apparatus with pneumatic intermittent cleaning
US4136435A (en) * 1973-10-10 1979-01-30 Li Chou H Method for making solid-state device
NL7414829A (nl) * 1973-11-17 1975-05-21 Sony Corp Magnetoresistief element.
AU499874B2 (en) * 1974-12-16 1979-05-03 Photovoltaic Ceramic Corp Ferroelelctric ceramic photovoltaic memory
JPS5559314A (en) * 1978-10-27 1980-05-02 Sony Corp Magnetic scale signal detector
US4690714A (en) * 1979-01-29 1987-09-01 Li Chou H Method of making active solid state devices
GB2191589B (en) * 1986-06-10 1990-06-13 Nippon Musical Instruments Mfg Sensor
US4984037A (en) * 1986-12-11 1991-01-08 Gte Laboratories Incorporated Semiconductor device with conductive rectifying rods
DE3903919A1 (de) * 1989-02-10 1990-08-16 Helmut Dr Weidlich Verfahren zur nutzbarmachung der kinetischen energie von elektronen
US5111254A (en) * 1990-08-17 1992-05-05 Gte Laboratories Incorporated Floating gate array transistors
US20040144999A1 (en) * 1995-06-07 2004-07-29 Li Chou H. Integrated circuit device
US7118942B1 (en) 2000-09-27 2006-10-10 Li Chou H Method of making atomic integrated circuit device
US20100276733A1 (en) * 2000-09-27 2010-11-04 Li Choa H Solid-state circuit device
TWI270242B (en) * 2004-11-05 2007-01-01 Ind Tech Res Inst Magnetic field enhanced photovoltaic devices
IN2013DE03078A (US20080094685A1-20080424-C00004.png) * 2013-10-17 2015-04-24 Council Scient Ind Res

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3082507A (en) * 1963-03-26 Magnetically responsive resistance device
US2894234A (en) * 1959-07-07 Electric variable resistance devices
BE466591A (US20080094685A1-20080424-C00004.png) * 1945-07-13
US2704708A (en) * 1948-08-23 1955-03-22 Westinghouse Freins & Signaux Method for the preparation of germanium
US2778802A (en) * 1954-04-26 1957-01-22 Battelle Development Corp Intermetallic compounds of groups iii and v metals containing small amounts of nickel, cobalt or iron
US2813048A (en) * 1954-06-24 1957-11-12 Bell Telephone Labor Inc Temperature gradient zone-melting
US2858275A (en) * 1954-12-23 1958-10-28 Siemens Ag Mixed-crystal semiconductor devices
US3042887A (en) * 1958-09-15 1962-07-03 Siemens Ag Magnetic-field responsive resistance device
US3134083A (en) * 1962-10-04 1964-05-19 Gen Dynamics Corp Hall device construction

Also Published As

Publication number Publication date
US3226225A (en) 1965-12-28
US3267405A (en) 1966-08-16
DE1281578B (de) 1968-10-31

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