NL282779A - - Google Patents

Info

Publication number
NL282779A
NL282779A NL282779DA NL282779A NL 282779 A NL282779 A NL 282779A NL 282779D A NL282779D A NL 282779DA NL 282779 A NL282779 A NL 282779A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL282779A publication Critical patent/NL282779A/xx
Priority to US136841A priority Critical patent/US3283170A/en

Links

Classifications

    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/20Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
    • H03K19/21EXCLUSIVE-OR circuits, i.e. giving output if input signal exists at only one input; COINCIDENCE circuits, i.e. giving output only if all input signals are identical
    • H03K19/212EXCLUSIVE-OR circuits, i.e. giving output if input signal exists at only one input; COINCIDENCE circuits, i.e. giving output only if all input signals are identical using bipolar transistors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0761Vertical bipolar transistor in combination with diodes only
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821Collector regions of bipolar transistors
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175Coupling arrangements; Interface arrangements
    • H03K19/018Coupling arrangements; Interface arrangements using bipolar transistors only
    • H03K19/01806Interface arrangements
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/088Transistor-transistor logic
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/037Diffusion-deposition
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/085Isolated-integrated
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/151Simultaneous diffusion
NL282779D 1961-09-08 NL282779A (xx)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US136841A US3283170A (en) 1961-09-08 1961-09-08 Coupling transistor logic and other circuits

Publications (1)

Publication Number Publication Date
NL282779A true NL282779A (xx)

Family

ID=22474605

Family Applications (1)

Application Number Title Priority Date Filing Date
NL282779D NL282779A (xx) 1961-09-08

Country Status (5)

Country Link
US (1) US3283170A (xx)
JP (2) JPS5144638B1 (xx)
DE (1) DE1464340B2 (xx)
GB (1) GB1002734A (xx)
NL (1) NL282779A (xx)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3319311A (en) * 1963-05-24 1967-05-16 Ibm Semiconductor devices and their fabrication
GB1073551A (en) * 1964-07-02 1967-06-28 Westinghouse Electric Corp Integrated circuit comprising a diode and method of making the same
US3443176A (en) * 1966-03-31 1969-05-06 Ibm Low resistivity semiconductor underpass connector and fabrication method therefor
US3508209A (en) * 1966-03-31 1970-04-21 Ibm Monolithic integrated memory array structure including fabrication and package therefor
US3402330A (en) * 1966-05-16 1968-09-17 Honeywell Inc Semiconductor integrated circuit apparatus
US3390280A (en) * 1966-05-24 1968-06-25 Plessey Co Ltd Semiconductor coupling means for two transistors or groups of transistors
US3483400A (en) * 1966-06-15 1969-12-09 Sharp Kk Flip-flop circuit
US3473053A (en) * 1966-07-11 1969-10-14 Sylvania Electric Prod Two-input bistable logic circuit of the delay flip-flop type
US3575646A (en) * 1966-09-23 1971-04-20 Westinghouse Electric Corp Integrated circuit structures including controlled rectifiers
US3475621A (en) * 1967-03-23 1969-10-28 Ibm Standardized high-density integrated circuit arrangement and method
US3518458A (en) * 1967-06-23 1970-06-30 Mallory & Co Inc P R Decoupling means for integrated circuit
DE1537455C3 (xx) * 1967-07-20 1973-10-18 Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm
US3544864A (en) * 1967-08-31 1970-12-01 Gen Telephone & Elect Solid state field effect device
NL6715013A (xx) * 1967-11-04 1969-05-06
US3576445A (en) * 1968-04-01 1971-04-27 Bell Telephone Labor Inc Transistor logic arrangements
NL6904543A (xx) * 1969-03-25 1970-09-29
US3769530A (en) * 1969-07-11 1973-10-30 Nat Semiconductor Corp Multiple emitter transistor apparatus
US3702955A (en) * 1969-07-11 1972-11-14 Nat Semiconductor Corp Multiple emitter transistor apparatus
BE756139A (fr) * 1969-09-15 1971-02-15 Rca Corp Circuit intermediaire integre pour le couplage d'un circuit de commandea impedance de sortie faible a une charge a impedance d'entree elevee
NL7016719A (xx) * 1970-11-14 1972-05-16
US3743855A (en) * 1971-06-10 1973-07-03 Allen Bradley Co Fault detecting and fault propagating logic gate
US3746885A (en) * 1971-07-06 1973-07-17 Burroughs Corp Improved logic circuit using a current switch to compensate for signal deterioration
US3828202A (en) * 1971-07-06 1974-08-06 Burroughs Corp Logic circuit using a current switch to compensate for signal deterioration
US3703669A (en) * 1971-08-12 1972-11-21 Motorola Inc Photocurrent cross talk isolation
US3732440A (en) * 1971-12-23 1973-05-08 Ibm Address decoder latch
US3999215A (en) * 1972-05-31 1976-12-21 U.S. Philips Corporation Integrated semiconductor device comprising multi-layer circuit element and short-circuit means
CA997481A (en) * 1972-12-29 1976-09-21 International Business Machines Corporation Dc testing of integrated circuits and a novel integrated circuit structure to facilitate such testing
JPS5548704B2 (xx) * 1973-06-01 1980-12-08
US3838296A (en) * 1973-10-29 1974-09-24 Nat Semiconductor Corp Emitter coupled logic transistor circuit
FR2272536B1 (xx) * 1974-05-20 1978-02-03 Tokyo Shibaura Electric Co
JPS573225B2 (xx) * 1974-08-19 1982-01-20
US3999080A (en) * 1974-12-23 1976-12-21 Texas Instruments Inc. Transistor coupled logic circuit
US3986057A (en) * 1975-06-30 1976-10-12 International Business Machines Corporation High performance latch circuit
FR2375722B1 (xx) * 1976-12-21 1981-11-06 Thomson Csf
JPS5811375Y2 (xx) * 1980-08-29 1983-03-03
DE3043521C2 (xx) * 1980-11-18 1989-12-07 Agfa-Gevaert Ag, 5090 Leverkusen, De
US4567644A (en) * 1982-12-20 1986-02-04 Signetics Corporation Method of making triple diffused ISL structure
US5510745A (en) * 1987-07-29 1996-04-23 Fujitsu Limited High-speed electronic circuit having a cascode configuration
EP0329793B1 (en) * 1987-07-29 1995-10-25 Fujitsu Limited High-speed electronic circuit having a cascode configuration
DE10317213A1 (de) * 2003-04-15 2004-11-04 Robert Bosch Gmbh Pegelwandler
JP2005312132A (ja) * 2004-04-19 2005-11-04 Auto Network Gijutsu Kenkyusho:Kk 電気接続箱
CN101470409B (zh) * 2007-12-26 2010-11-10 鸿富锦精密工业(深圳)有限公司;鸿海精密工业股份有限公司 激光装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2913704A (en) * 1954-07-06 1959-11-17 Sylvania Electric Prod Multiple emitter matrices
US2877310A (en) * 1957-09-30 1959-03-10 Advanced Res Associates Inc Semiconductor amplifiers
NL260481A (xx) * 1960-02-08
NL262811A (xx) * 1960-04-20
US3090873A (en) * 1960-06-21 1963-05-21 Bell Telephone Labor Inc Integrated semiconductor switching device

Also Published As

Publication number Publication date
DE1464340A1 (de) 1969-03-13
US3283170A (en) 1966-11-01
DE1464340B2 (de) 1973-05-10
JPS5144638B1 (xx) 1976-11-30
GB1002734A (en) 1965-08-25
JPS4812661B1 (xx) 1973-04-21

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