NL263492A - - Google Patents
Info
- Publication number
- NL263492A NL263492A NL263492DA NL263492A NL 263492 A NL263492 A NL 263492A NL 263492D A NL263492D A NL 263492DA NL 263492 A NL263492 A NL 263492A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S252/00—Compositions
- Y10S252/95—Doping agent source material
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US62495A US3084079A (en) | 1960-10-13 | 1960-10-13 | Manufacture of semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
NL263492A true NL263492A (pm) | 1964-05-25 |
Family
ID=22042857
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL263492D NL263492A (pm) | 1960-10-13 | 1961-04-11 |
Country Status (5)
Country | Link |
---|---|
US (1) | US3084079A (pm) |
DE (1) | DE1213054B (pm) |
FR (1) | FR1287279A (pm) |
GB (1) | GB930487A (pm) |
NL (1) | NL263492A (pm) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3200019A (en) * | 1962-01-19 | 1965-08-10 | Rca Corp | Method for making a semiconductor device |
US3247032A (en) * | 1962-06-20 | 1966-04-19 | Continental Device Corp | Method for controlling diffusion of an active impurity material into a semiconductor body |
US3281291A (en) * | 1963-08-30 | 1966-10-25 | Rca Corp | Semiconductor device fabrication |
GB1102164A (en) * | 1964-04-15 | 1968-02-07 | Texas Instruments Inc | Selective impurity diffusion |
US3354005A (en) * | 1965-10-23 | 1967-11-21 | Western Electric Co | Methods of applying doping compositions to base materials |
US3532563A (en) * | 1968-03-19 | 1970-10-06 | Milton Genser | Doping of semiconductor surfaces |
US4050966A (en) * | 1968-12-20 | 1977-09-27 | Siemens Aktiengesellschaft | Method for the preparation of diffused silicon semiconductor components |
US3630793A (en) * | 1969-02-24 | 1971-12-28 | Ralph W Christensen | Method of making junction-type semiconductor devices |
DE2007752B2 (de) * | 1970-02-19 | 1978-07-27 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen von dotiertem Halbleitermaterial |
US3928225A (en) * | 1971-04-08 | 1975-12-23 | Semikron Gleichrichterbau | Glass forming mixture with boron as the doping material for producing conductivity zones in semiconductor bodies by means of diffusion |
US4048350A (en) * | 1975-09-19 | 1977-09-13 | International Business Machines Corporation | Semiconductor device having reduced surface leakage and methods of manufacture |
US4236948A (en) * | 1979-03-09 | 1980-12-02 | Demetron Gesellschaft Fur Elektronik Werkstoffe Mbh | Process for doping semiconductor crystals |
GB2114365B (en) * | 1982-01-28 | 1986-08-06 | Owens Illinois Inc | Process for forming a doped oxide film and composite article |
US4571366A (en) * | 1982-02-11 | 1986-02-18 | Owens-Illinois, Inc. | Process for forming a doped oxide film and doped semiconductor |
US4605450A (en) * | 1982-02-11 | 1986-08-12 | Owens-Illinois, Inc. | Process for forming a doped oxide film and doped semiconductor |
US4490192A (en) * | 1983-06-08 | 1984-12-25 | Allied Corporation | Stable suspensions of boron, phosphorus, antimony and arsenic dopants |
JPS60153119A (ja) * | 1984-01-20 | 1985-08-12 | Fuji Electric Corp Res & Dev Ltd | 不純物拡散方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB580412A (en) * | 1942-08-29 | 1946-09-06 | Micromatic Hone Corp | Improvements in tools for honing helical slots or grooves |
US2484519A (en) * | 1946-01-15 | 1949-10-11 | Martin Graham Robert | Method of coating surfaces with boron |
GB778383A (en) * | 1953-10-02 | 1957-07-03 | Standard Telephones Cables Ltd | Improvements in or relating to the production of material for semi-conductors |
NL99619C (pm) * | 1955-06-28 | |||
US2832702A (en) * | 1955-08-18 | 1958-04-29 | Hughes Aircraft Co | Method of treating semiconductor bodies for translating devices |
NL109817C (pm) * | 1955-12-02 | |||
US2828232A (en) * | 1956-05-01 | 1958-03-25 | Hughes Aircraft Co | Method for producing junctions in semi-conductor device |
GB909869A (pm) * | 1958-06-09 | 1900-01-01 | ||
US2974073A (en) * | 1958-12-04 | 1961-03-07 | Rca Corp | Method of making phosphorus diffused silicon semiconductor devices |
FR1248102A (fr) * | 1959-10-30 | 1960-12-09 | Materiel Telephonique | Préparation des semi-conducteurs |
-
1960
- 1960-10-13 US US62495A patent/US3084079A/en not_active Expired - Lifetime
-
1961
- 1961-04-06 GB GB12396/61A patent/GB930487A/en not_active Expired
- 1961-04-11 NL NL263492D patent/NL263492A/xx unknown
- 1961-04-27 FR FR860134A patent/FR1287279A/fr not_active Expired
- 1961-05-09 DE DEP27124A patent/DE1213054B/de active Pending
Also Published As
Publication number | Publication date |
---|---|
GB930487A (en) | 1963-07-03 |
FR1287279A (fr) | 1962-03-09 |
US3084079A (en) | 1963-04-02 |
DE1213054B (de) | 1966-03-24 |