NL238924A - - Google Patents

Info

Publication number
NL238924A
NL238924A NL238924DA NL238924A NL 238924 A NL238924 A NL 238924A NL 238924D A NL238924D A NL 238924DA NL 238924 A NL238924 A NL 238924A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL238924A publication Critical patent/NL238924A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
NL238924D 1959-05-05 NL238924A (US07655688-20100202-C00548.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL238924 1959-05-05

Publications (1)

Publication Number Publication Date
NL238924A true NL238924A (US07655688-20100202-C00548.png)

Family

ID=19751707

Family Applications (1)

Application Number Title Priority Date Filing Date
NL238924D NL238924A (US07655688-20100202-C00548.png) 1959-05-05

Country Status (5)

Country Link
US (1) US3033660A (US07655688-20100202-C00548.png)
CH (1) CH407051A (US07655688-20100202-C00548.png)
DE (1) DE1136670B (US07655688-20100202-C00548.png)
GB (1) GB953538A (US07655688-20100202-C00548.png)
NL (1) NL238924A (US07655688-20100202-C00548.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0303409A1 (en) * 1987-08-06 1989-02-15 United Kingdom Atomic Energy Authority Single crystal pulling

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3241925A (en) * 1960-08-19 1966-03-22 Union Carbide Corp Apparatus for growing solid homogeneous compositions
DE1217926B (de) * 1963-08-17 1966-06-02 Siemens Ag Verfahren zum Vermeiden von Streifen in Metall- oder Halbleiterkristallen
DE1251721B (de) * 1963-10-28 1967-10-12 Siemens Aktiengesellschaft, Berlin und München München Verfahren zum Herstellen von Halbleiteiknstallen vorzugsweise Halbleiteremknstallen mit einstellbarer, beispielsweise konstanter Fremdstoffkonzentration
DE1245318B (de) * 1963-11-16 1967-07-27 Siemens Ag Vorrichtung zum Herstellen von Kristallen durch Ziehen aus der Schmelze
US3337303A (en) * 1965-03-01 1967-08-22 Elmat Corp Crystal growing apparatus
US3493348A (en) * 1966-07-01 1970-02-03 Ibm Buoyant device in crystal growing
US3471266A (en) * 1967-05-29 1969-10-07 Tyco Laboratories Inc Growth of inorganic filaments
US3765843A (en) * 1971-07-01 1973-10-16 Tyco Laboratories Inc Growth of tubular crystalline bodies
US3853489A (en) * 1971-11-08 1974-12-10 Tyco Laboratories Inc A non-wetting aid for growing crystalline bodies
BE791024A (fr) * 1971-11-08 1973-05-07 Tyco Laboratories Inc Procede pour developper des cristaux a partir d'un bain d'une matiere
US3755011A (en) * 1972-06-01 1973-08-28 Rca Corp Method for depositing an epitaxial semiconductive layer from the liquid phase
US3870477A (en) * 1972-07-10 1975-03-11 Tyco Laboratories Inc Optical control of crystal growth
US4125425A (en) * 1974-03-01 1978-11-14 U.S. Philips Corporation Method of manufacturing flat tapes of crystalline silicon from a silicon melt by drawing a seed crystal of silicon from the melt flowing down the faces of a knife shaped heated element
US4000030A (en) * 1975-06-09 1976-12-28 International Business Machines Corporation Method for drawing a monocrystal from a melt formed about a wettable projection
EP0173764B1 (en) * 1984-08-31 1989-12-13 Gakei Electric Works Co., Ltd. Single crystal growing method and apparatus
JPH0628234B2 (ja) * 1984-10-05 1994-04-13 株式会社日立製作所 ＧａＡｓ単結晶および半導体装置
US5770873A (en) 1984-10-05 1998-06-23 Hitachi, Ltd. GaAs single crystal as well as method of producing the same, and semiconductor device utilizing the GaAs single crystal
JPS6379790A (ja) * 1986-09-22 1988-04-09 Toshiba Corp 結晶引上げ装置
US4968380A (en) * 1989-05-24 1990-11-06 Mobil Solar Energy Corporation System for continuously replenishing melt
US5650008A (en) * 1995-12-01 1997-07-22 Advanced Materials Processing, Llc Method for preparing homogeneous bridgman-type single crystals
JP4059943B2 (ja) * 1996-10-24 2008-03-12 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体単結晶製造装置のメルトレシーブ
US6809027B2 (en) * 2002-06-06 2004-10-26 International Business Machines Corporation Self-aligned borderless contacts
ES2592814T3 (es) * 2011-08-26 2016-12-01 Consarc Corporation Purificación de un metaloide mediante proceso de refundición por arco en vacío de electrodo consumible
CN112853471A (zh) * 2021-01-15 2021-05-28 广州皇标科技有限公司 一种光伏电池加工用单晶炉
CN112899773A (zh) * 2021-01-15 2021-06-04 广州皇标科技有限公司 一种光伏电池加工用制硅方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1552884A (en) * 1925-04-08 1925-09-08 Schnurpfeil Hans Pot for melting glass
NL107897C (US07655688-20100202-C00548.png) * 1953-05-18
US2793103A (en) * 1954-02-24 1957-05-21 Siemens Ag Method for producing rod-shaped bodies of crystalline material

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0303409A1 (en) * 1987-08-06 1989-02-15 United Kingdom Atomic Energy Authority Single crystal pulling

Also Published As

Publication number Publication date
GB953538A (en) 1964-03-25
CH407051A (de) 1966-02-15
US3033660A (en) 1962-05-08
DE1136670B (de) 1962-09-20

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