NL235742A - - Google Patents
Info
- Publication number
- NL235742A NL235742A NL235742DA NL235742A NL 235742 A NL235742 A NL 235742A NL 235742D A NL235742D A NL 235742DA NL 235742 A NL235742 A NL 235742A
- Authority
- NL
- Netherlands
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/645—Combinations of only lateral BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/50—Alloying conductive materials with semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/69—Insulating materials thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
- H10W76/60—Seals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
- H10W72/07531—Techniques
- H10W72/07532—Compression bonding, e.g. thermocompression bonding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/59—Bond pads specially adapted therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/931—Shapes of bond pads
- H10W72/932—Plan-view shape, i.e. in top view
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/951—Materials of bond pads
- H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S228/00—Metal fusion bonding
- Y10S228/903—Metal to nonmetal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/922—Static electricity metal bleed-off metallic stock
- Y10S428/923—Physical dimension
- Y10S428/924—Composite
- Y10S428/926—Thickness of individual layer specified
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/922—Static electricity metal bleed-off metallic stock
- Y10S428/9265—Special properties
- Y10S428/929—Electrical contact feature
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/922—Static electricity metal bleed-off metallic stock
- Y10S428/9335—Product by special process
- Y10S428/938—Vapor deposition or gas diffusion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49204—Contact or terminal manufacturing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12528—Semiconductor component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12889—Au-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12896—Ag-base component
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US712804A US3028663A (en) | 1958-02-03 | 1958-02-03 | Method for applying a gold-silver contact onto silicon and germanium semiconductors and article |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL235742A true NL235742A (enExample) | 1900-01-01 |
Family
ID=24863620
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL235742D NL235742A (enExample) | 1958-02-03 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3028663A (enExample) |
| BE (1) | BE575275A (enExample) |
| DE (1) | DE1127488B (enExample) |
| FR (1) | FR1226492A (enExample) |
| GB (1) | GB911667A (enExample) |
| NL (1) | NL235742A (enExample) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3155936A (en) * | 1958-04-24 | 1964-11-03 | Motorola Inc | Transistor device with self-jigging construction |
| US3108209A (en) * | 1959-05-21 | 1963-10-22 | Motorola Inc | Transistor device and method of manufacture |
| GB930091A (en) * | 1960-06-24 | 1963-07-03 | Mond Nickel Co Ltd | Improvements relating to the production of semi-conductor devices |
| US3158504A (en) * | 1960-10-07 | 1964-11-24 | Texas Instruments Inc | Method of alloying an ohmic contact to a semiconductor |
| NL270517A (enExample) * | 1960-11-16 | |||
| DE1131811B (de) * | 1961-05-17 | 1962-06-20 | Intermetall | Verfahren zum sperrfreien Kontaktieren des Kollektors von Germanium-Transistoren |
| DE1172378B (de) * | 1961-07-14 | 1964-06-18 | Siemens Ag | Verfahren zur Herstellung einer elektrisch unsymmetrisch leitenden Halbleiteranordnung |
| FR1306701A (fr) * | 1961-09-04 | 1962-10-19 | Electronique & Automatisme Sa | Perfectionnements aux potentiomètres |
| DE1174912B (de) * | 1962-01-09 | 1964-07-30 | Bosch Gmbh Robert | Verfahren zum Behandeln von Einschmelz-draehten fuer Elektronenroehren |
| DE1251871B (enExample) * | 1962-02-06 | 1900-01-01 | ||
| US3266137A (en) * | 1962-06-07 | 1966-08-16 | Hughes Aircraft Co | Metal ball connection to crystals |
| NL296608A (enExample) * | 1962-08-15 | |||
| US3271636A (en) * | 1962-10-23 | 1966-09-06 | Bell Telephone Labor Inc | Gallium arsenide semiconductor diode and method |
| NL303035A (enExample) * | 1963-02-06 | 1900-01-01 | ||
| US3349476A (en) * | 1963-11-26 | 1967-10-31 | Ibm | Formation of large area contacts to semiconductor devices |
| GB1025453A (en) * | 1964-01-29 | 1966-04-06 | Standard Telephones Cables Ltd | Improvements in or relating to semiconductor devices |
| US3370207A (en) * | 1964-02-24 | 1968-02-20 | Gen Electric | Multilayer contact system for semiconductor devices including gold and copper layers |
| US3323956A (en) * | 1964-03-16 | 1967-06-06 | Hughes Aircraft Co | Method of manufacturing semiconductor devices |
| US3268309A (en) * | 1964-03-30 | 1966-08-23 | Gen Electric | Semiconductor contact means |
| US3290570A (en) * | 1964-04-28 | 1966-12-06 | Texas Instruments Inc | Multilevel expanded metallic contacts for semiconductor devices |
| US3325704A (en) * | 1964-07-31 | 1967-06-13 | Texas Instruments Inc | High frequency coaxial transistor package |
| DE1274735B (de) * | 1964-08-21 | 1968-08-08 | Ibm Deutschland | Verfahren zum Herstellen von Legierungskontakten an Halbleiterkoerpern |
| DE1514806B1 (de) * | 1965-04-10 | 1970-04-23 | Telefunken Patent | Verfahren zur Herstellung einer sperrenden oder nichtsperrenden Elektrode an einem Halbleiterkoerper sowie einer diese Elektrode kontaktierenden Leitbahn |
| US3733685A (en) * | 1968-11-25 | 1973-05-22 | Gen Motors Corp | Method of making a passivated wire bonded semiconductor device |
| US3751293A (en) * | 1969-04-04 | 1973-08-07 | Bell Telephone Labor Inc | Method for reducing interdiffusion rates between thin film components |
| US3654694A (en) * | 1969-04-28 | 1972-04-11 | Hughes Aircraft Co | Method for bonding contacts to and forming alloy sites on silicone carbide |
| US3869260A (en) * | 1971-08-04 | 1975-03-04 | Ferranti Ltd | Manufacture of supports for use with semiconductor devices |
| JPS59213145A (ja) * | 1983-05-18 | 1984-12-03 | Toshiba Corp | 半導体装置及びその製造方法 |
| US4702941A (en) * | 1984-03-27 | 1987-10-27 | Motorola Inc. | Gold metallization process |
| US4822641A (en) * | 1985-04-30 | 1989-04-18 | Inovan Gmbh & Co. Kg | Method of manufacturing a contact construction material structure |
| US4753897A (en) * | 1986-03-14 | 1988-06-28 | Motorola Inc. | Method for providing contact separation in silicided devices using false gate |
| US4998158A (en) * | 1987-06-01 | 1991-03-05 | Motorola, Inc. | Hypoeutectic ohmic contact to N-type gallium arsenide with diffusion barrier |
| RU2564685C1 (ru) * | 2014-08-25 | 2015-10-10 | Олег Петрович Ксенофонтов | Способ сплавления |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2446254A (en) * | 1942-12-07 | 1948-08-03 | Hartford Nat Bank & Trust Co | Blocking-layer cell |
| US2531660A (en) * | 1949-08-27 | 1950-11-28 | Bell Telephone Labor Inc | Fabrication of piezoelectric crystal units |
| US2695852A (en) * | 1952-02-15 | 1954-11-30 | Bell Telephone Labor Inc | Fabrication of semiconductors for signal translating devices |
| US2782492A (en) * | 1954-02-11 | 1957-02-26 | Atlas Powder Co | Method of bonding fine wires to copper or copper alloys |
| BE540780A (enExample) * | 1954-08-26 | 1900-01-01 | ||
| NL204361A (enExample) * | 1955-04-22 | 1900-01-01 | ||
| US2763822A (en) * | 1955-05-10 | 1956-09-18 | Westinghouse Electric Corp | Silicon semiconductor devices |
| US2824269A (en) * | 1956-01-17 | 1958-02-18 | Bell Telephone Labor Inc | Silicon translating devices and silicon alloys therefor |
| BE555318A (enExample) * | 1956-03-07 | |||
| US2922092A (en) * | 1957-05-09 | 1960-01-19 | Westinghouse Electric Corp | Base contact members for semiconductor devices |
-
0
- BE BE575275D patent/BE575275A/xx unknown
- NL NL235742D patent/NL235742A/xx unknown
-
1958
- 1958-02-03 US US712804A patent/US3028663A/en not_active Expired - Lifetime
-
1959
- 1959-01-27 DE DEW24913A patent/DE1127488B/de active Pending
- 1959-01-30 GB GB3368/59A patent/GB911667A/en not_active Expired
- 1959-01-31 FR FR785474A patent/FR1226492A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1127488B (de) | 1962-04-12 |
| BE575275A (enExample) | 1900-01-01 |
| US3028663A (en) | 1962-04-10 |
| GB911667A (en) | 1962-11-28 |
| FR1226492A (fr) | 1960-07-13 |