NL2019503B1 - Fabricating unique chips using a charged particle multi-beamlet lithography system - Google Patents
Fabricating unique chips using a charged particle multi-beamlet lithography system Download PDFInfo
- Publication number
- NL2019503B1 NL2019503B1 NL2019503A NL2019503A NL2019503B1 NL 2019503 B1 NL2019503 B1 NL 2019503B1 NL 2019503 A NL2019503 A NL 2019503A NL 2019503 A NL2019503 A NL 2019503A NL 2019503 B1 NL2019503 B1 NL 2019503B1
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- 239000002245 particle Substances 0.000 title claims description 23
- 238000001459 lithography Methods 0.000 title description 62
- 238000013461 design Methods 0.000 claims abstract description 142
- 238000004519 manufacturing process Methods 0.000 claims abstract description 48
- 238000000034 method Methods 0.000 claims description 97
- 239000004065 semiconductor Substances 0.000 claims description 57
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- 238000012545 processing Methods 0.000 claims description 24
- 230000004044 response Effects 0.000 claims description 11
- 238000009792 diffusion process Methods 0.000 claims description 4
- 239000007943 implant Substances 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 84
- 239000010410 layer Substances 0.000 description 63
- 230000008569 process Effects 0.000 description 38
- 238000003860 storage Methods 0.000 description 16
- 230000003287 optical effect Effects 0.000 description 9
- 238000000206 photolithography Methods 0.000 description 9
- 238000002360 preparation method Methods 0.000 description 9
- 238000012937 correction Methods 0.000 description 8
- 238000010894 electron beam technology Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000004590 computer program Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 238000007726 management method Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000007781 pre-processing Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000006399 behavior Effects 0.000 description 3
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 230000001012 protector Effects 0.000 description 2
- 238000012795 verification Methods 0.000 description 2
- 229910001149 41xx steel Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000002039 particle-beam lithography Methods 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/302—Controlling tubes by external information, e.g. programme control
- H01J37/3023—Programme control
- H01J37/3026—Patterning strategy
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
- G06F30/392—Floor-planning or layout, e.g. partitioning or placement
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
- G06F30/394—Routing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2119/00—Details relating to the type or aim of the analysis or the optimisation
- G06F2119/18—Manufacturability analysis or optimisation for manufacturability
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31761—Patterning strategy
- H01J2237/31762—Computer and memory organisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31761—Patterning strategy
- H01J2237/31764—Dividing into sub-patterns
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- General Engineering & Computer Science (AREA)
- Geometry (AREA)
- Evolutionary Computation (AREA)
- Architecture (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Computer Networks & Wireless Communication (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electron Beam Exposure (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662385049P | 2016-09-08 | 2016-09-08 | |
| US201662413470P | 2016-10-27 | 2016-10-27 | |
| US15/389,581 US10079206B2 (en) | 2016-10-27 | 2016-12-23 | Fabricating unique chips using a charged particle multi-beamlet lithography system |
| US201762458071P | 2017-02-13 | 2017-02-13 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NL2019503A NL2019503A (en) | 2018-03-13 |
| NL2019503B1 true NL2019503B1 (en) | 2018-08-31 |
Family
ID=61561455
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL2019503A NL2019503B1 (en) | 2016-09-08 | 2017-09-07 | Fabricating unique chips using a charged particle multi-beamlet lithography system |
Country Status (5)
| Country | Link |
|---|---|
| KR (1) | KR102583607B1 (fr) |
| CN (1) | CN114488706A (fr) |
| NL (1) | NL2019503B1 (fr) |
| TW (1) | TWI757336B (fr) |
| WO (1) | WO2018047985A1 (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11914305B2 (en) * | 2020-02-18 | 2024-02-27 | Applied Materials, Inc. | Data inspection for digital lithography for HVM using offline and inline approach |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2910424B2 (ja) * | 1992-06-10 | 1999-06-23 | 日本電気株式会社 | 半導体装置の製造方法 |
| JPH097924A (ja) * | 1995-06-21 | 1997-01-10 | Nec Corp | 半導体装置の製造装置及び半導体装置の製造方法 |
| JP2001109128A (ja) * | 1999-10-12 | 2001-04-20 | Hitachi Ltd | リソグラフィ用パターンデータ生成方法、それを用いた半導体装置の製造方法及び半導体製造装置 |
| SE522531C2 (sv) * | 1999-11-24 | 2004-02-17 | Micronic Laser Systems Ab | Metod och anordning för märkning av halvledare |
| JP2001337439A (ja) * | 2000-05-26 | 2001-12-07 | Hitachi Ltd | 半導体集積回路の設計、製造方法および検査方法並びに半導体集積回路 |
| SG110196A1 (en) | 2003-09-22 | 2005-04-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| US7532378B2 (en) * | 2006-02-21 | 2009-05-12 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus, method of laser irradiation, and method for manufacturing semiconductor device |
| EP2433295A2 (fr) | 2009-05-20 | 2012-03-28 | Mapper Lithography IP B.V. | Balayage à double passage |
| WO2010134017A1 (fr) * | 2009-05-20 | 2010-11-25 | Mapper Lithography Ip B.V. | Procédé de génération d'un modèle à deux niveaux pour un traitement lithographique et générateur de modèles l'utilisant |
| JP5844269B2 (ja) | 2009-10-26 | 2016-01-13 | マッパー・リソグラフィー・アイピー・ビー．ブイ． | 調整装置を有する荷電粒子複数ビームレット・リソグラフィ・システム |
| JP2011108830A (ja) * | 2009-11-17 | 2011-06-02 | Nuflare Technology Inc | 荷電粒子ビーム描画装置 |
| US8539395B2 (en) * | 2010-03-05 | 2013-09-17 | Micronic Laser Systems Ab | Method and apparatus for merging multiple geometrical pixel images and generating a single modulator pixel image |
| NL1037820C2 (en) | 2010-03-22 | 2011-09-23 | Mapper Lithography Ip Bv | Lithography system, sensor, sensor surface element and method of manufacture. |
| US8921758B2 (en) * | 2010-10-26 | 2014-12-30 | Mapper Lithography Ip B.V. | Modulation device and charged particle multi-beamlet lithography system using the same |
| US9305747B2 (en) * | 2010-11-13 | 2016-04-05 | Mapper Lithography Ip B.V. | Data path for lithography apparatus |
| US8884255B2 (en) * | 2010-11-13 | 2014-11-11 | Mapper Lithography Ip B.V. | Data path for lithography apparatus |
| JP6349113B2 (ja) * | 2013-03-13 | 2018-06-27 | ディー・ツー・エス・インコーポレイテッドＤ２Ｓ， Ｉｎｃ． | 半導体装置レイアウトデザインのフラクチャリングまたはマスクデータ準備のための方法およびシステム、ならびにレチクル上に半導体レイアウトパターンを形成するための方法 |
-
2017
- 2017-09-07 NL NL2019503A patent/NL2019503B1/nl active
- 2017-09-08 WO PCT/JP2017/033371 patent/WO2018047985A1/fr active Search and Examination
- 2017-09-08 KR KR1020227045107A patent/KR102583607B1/ko active IP Right Grant
- 2017-09-08 CN CN202210050809.XA patent/CN114488706A/zh active Pending
- 2017-09-08 TW TW106130856A patent/TWI757336B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI757336B (zh) | 2022-03-11 |
| TW201820050A (zh) | 2018-06-01 |
| NL2019503A (en) | 2018-03-13 |
| WO2018047985A1 (fr) | 2018-03-15 |
| KR102583607B1 (ko) | 2023-10-05 |
| KR20230004952A (ko) | 2023-01-06 |
| CN114488706A (zh) | 2022-05-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PD | Change of ownership |
Owner name: ASML NETHERLANDS B.V.; NL Free format text: DETAILS ASSIGNMENT: CHANGE OF OWNER(S), ASSIGNMENT; FORMER OWNER NAME: MAPPER LITHOGRAPHY IP B.V. Effective date: 20190425 |