NL2013210A - Metrology method and apparatus, lithographic system and device manufacturing method. - Google Patents
Metrology method and apparatus, lithographic system and device manufacturing method. Download PDFInfo
- Publication number
- NL2013210A NL2013210A NL2013210A NL2013210A NL2013210A NL 2013210 A NL2013210 A NL 2013210A NL 2013210 A NL2013210 A NL 2013210A NL 2013210 A NL2013210 A NL 2013210A NL 2013210 A NL2013210 A NL 2013210A
- Authority
- NL
- Netherlands
- Prior art keywords
- overlay
- asymmetry
- target
- substrate
- grating
- Prior art date
Links
- 238000000034 method Methods 0.000 title description 94
- 238000004519 manufacturing process Methods 0.000 title description 8
- 239000000758 substrate Substances 0.000 claims description 73
- 230000005855 radiation Effects 0.000 claims description 67
- 238000005286 illumination Methods 0.000 claims description 48
- 238000000059 patterning Methods 0.000 claims description 33
- 238000001459 lithography Methods 0.000 claims description 6
- 238000005259 measurement Methods 0.000 description 92
- 230000008569 process Effects 0.000 description 27
- 238000012417 linear regression Methods 0.000 description 19
- 230000003287 optical effect Effects 0.000 description 19
- 235000012431 wafers Nutrition 0.000 description 19
- 238000007689 inspection Methods 0.000 description 18
- 210000001747 pupil Anatomy 0.000 description 18
- 230000000737 periodic effect Effects 0.000 description 15
- 230000006870 function Effects 0.000 description 13
- 238000003384 imaging method Methods 0.000 description 13
- 238000012937 correction Methods 0.000 description 10
- 239000010410 layer Substances 0.000 description 10
- 238000004458 analytical method Methods 0.000 description 6
- 230000010287 polarization Effects 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 239000002131 composite material Substances 0.000 description 5
- 238000004590 computer program Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- 238000007654 immersion Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 230000033001 locomotion Effects 0.000 description 4
- 238000000611 regression analysis Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000005457 optimization Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 235000010627 Phaseolus vulgaris Nutrition 0.000 description 1
- 244000046052 Phaseolus vulgaris Species 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000001446 dark-field microscopy Methods 0.000 description 1
- 238000013479 data entry Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000003909 pattern recognition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000000513 principal component analysis Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 235000021251 pulses Nutrition 0.000 description 1
- 238000010187 selection method Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706835—Metrology information management or control
- G03F7/706839—Modelling, e.g. modelling scattering or solving inverse problems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706843—Metrology apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361863150P | 2013-08-07 | 2013-08-07 | |
| US201361863150 | 2013-08-07 | ||
| US201461975312P | 2014-04-04 | 2014-04-04 | |
| US201461975312 | 2014-04-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL2013210A true NL2013210A (en) | 2015-02-10 |
Family
ID=51211228
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL2013210A NL2013210A (en) | 2013-08-07 | 2014-07-18 | Metrology method and apparatus, lithographic system and device manufacturing method. |
Country Status (8)
| Country | Link |
|---|---|
| US (4) | US9910366B2 (OSRAM) |
| JP (2) | JP6336068B2 (OSRAM) |
| KR (2) | KR102124204B1 (OSRAM) |
| CN (2) | CN108398856B (OSRAM) |
| IL (1) | IL243854B (OSRAM) |
| NL (1) | NL2013210A (OSRAM) |
| TW (3) | TWI600981B (OSRAM) |
| WO (1) | WO2015018625A1 (OSRAM) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111095112A (zh) * | 2017-09-11 | 2020-05-01 | Asml荷兰有限公司 | 光刻过程中的量测 |
Families Citing this family (81)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9927718B2 (en) * | 2010-08-03 | 2018-03-27 | Kla-Tencor Corporation | Multi-layer overlay metrology target and complimentary overlay metrology measurement systems |
| US10890436B2 (en) | 2011-07-19 | 2021-01-12 | Kla Corporation | Overlay targets with orthogonal underlayer dummyfill |
| NL2011477A (en) * | 2012-10-10 | 2014-04-14 | Asml Netherlands Bv | Mark position measuring apparatus and method, lithographic apparatus and device manufacturing method. |
| WO2014062972A1 (en) * | 2012-10-18 | 2014-04-24 | Kla-Tencor Corporation | Symmetric target design in scatterometry overlay metrology |
| CN108398856B (zh) | 2013-08-07 | 2020-10-16 | Asml荷兰有限公司 | 量测方法和设备、光刻系统和器件制造方法 |
| SG11201703585RA (en) * | 2014-11-25 | 2017-06-29 | Kla Tencor Corp | Analyzing and utilizing landscapes |
| CN110553602B (zh) | 2014-11-26 | 2021-10-26 | Asml荷兰有限公司 | 度量方法、计算机产品和系统 |
| NL2016117A (en) | 2015-02-04 | 2016-09-29 | Asml Netherlands Bv | Metrology method and apparatus, computer program and lithographic system |
| WO2016162228A1 (en) | 2015-04-10 | 2016-10-13 | Asml Netherlands B.V. | Method and apparatus for inspection and metrology |
| CN107771271B (zh) | 2015-04-21 | 2020-11-06 | Asml荷兰有限公司 | 量测方法和设备、计算机程序及光刻系统 |
| TWI656409B (zh) * | 2015-09-09 | 2019-04-11 | 美商克萊譚克公司 | 基於輔助電磁場之引入之一階散射測量疊加之新方法 |
| CN108028210B (zh) * | 2015-09-21 | 2022-07-12 | 科磊股份有限公司 | 用于使用灵活取样的过程控制的方法及系统 |
| KR102166317B1 (ko) | 2015-12-24 | 2020-10-16 | 에이에스엠엘 네델란즈 비.브이. | 패터닝 공정의 제어 방법, 디바이스 제조 방법, 리소그래피 장치용 제어 시스템 및 리소그래피 장치 |
| KR102106937B1 (ko) | 2016-02-19 | 2020-05-07 | 에이에스엠엘 네델란즈 비.브이. | 구조체 측정 방법, 검사 장치, 리소그래피 시스템, 디바이스 제조 방법 및 그 안에 사용되는 파장-선택 필터 |
| CN108700829B (zh) | 2016-02-26 | 2021-05-18 | Asml荷兰有限公司 | 测量结构的方法、检查设备、光刻系统、器件制造方法 |
| US10615084B2 (en) * | 2016-03-01 | 2020-04-07 | Asml Netherlands B.V. | Method and apparatus to determine a patterning process parameter, associated with a change in a physical configuration, using measured pixel optical characteristic values |
| CN111736436B (zh) | 2016-04-22 | 2023-08-18 | Asml荷兰有限公司 | 堆叠差异的确定和使用堆叠差异的校正 |
| US10115621B2 (en) | 2016-05-13 | 2018-10-30 | Globalfoundries Inc. | Method for in-die overlay control using FEOL dummy fill layer |
| TWI704421B (zh) * | 2016-06-10 | 2020-09-11 | 比利時商愛美科公司 | 半導體製程的量測方法 |
| IL297496B2 (en) | 2016-07-15 | 2025-03-01 | Asml Netherlands Bv | Method and device for designing a target field for metrology |
| US10048132B2 (en) * | 2016-07-28 | 2018-08-14 | Kla-Tencor Corporation | Simultaneous capturing of overlay signals from multiple targets |
| EP3293574A1 (en) | 2016-09-09 | 2018-03-14 | ASML Netherlands B.V. | Metrology method, apparatus and computer program |
| WO2018059824A1 (en) | 2016-09-27 | 2018-04-05 | Asml Netherlands B.V. | Metrology recipe selection |
| EP3299890A1 (en) | 2016-09-27 | 2018-03-28 | ASML Netherlands B.V. | Metrology recipe selection |
| WO2018087207A1 (en) * | 2016-11-10 | 2018-05-17 | Asml Netherlands B.V. | Design and correction using stack difference |
| EP3333631A1 (en) | 2016-12-06 | 2018-06-13 | ASML Netherlands B.V. | Method of measuring a target, metrology apparatus, polarizer assembly |
| EP3333632A1 (en) | 2016-12-08 | 2018-06-13 | ASML Netherlands B.V. | Metrology apparatus |
| US10983005B2 (en) | 2016-12-15 | 2021-04-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Spectroscopic overlay metrology |
| EP3336607A1 (en) | 2016-12-16 | 2018-06-20 | ASML Netherlands B.V. | Method of measuring a property of a substrate, inspection apparatus, lithographic system and device manufacturing method |
| EP3358413A1 (en) * | 2017-02-02 | 2018-08-08 | ASML Netherlands B.V. | Metrology method, apparatus and computer program |
| US10656535B2 (en) * | 2017-03-31 | 2020-05-19 | Imec Vzw | Metrology method for a semiconductor manufacturing process |
| WO2018197198A1 (en) | 2017-04-28 | 2018-11-01 | Asml Netherlands B.V. | Metrology method and apparatus and associated computer program |
| WO2018202388A1 (en) | 2017-05-03 | 2018-11-08 | Asml Netherlands B.V. | Metrology parameter determination and metrology recipe selection |
| EP3399371A1 (en) * | 2017-05-05 | 2018-11-07 | ASML Netherlands B.V. | Method of measuring a parameter of interest, device manufacturing method, metrology apparatus, and lithographic system |
| KR102432667B1 (ko) | 2017-05-15 | 2022-08-17 | 삼성전자주식회사 | 오버레이 보정방법 및 제어 시스템 |
| EP3422103A1 (en) | 2017-06-26 | 2019-01-02 | ASML Netherlands B.V. | Method of determining a performance parameter of a process |
| EP3422105A1 (en) * | 2017-06-30 | 2019-01-02 | ASML Netherlands B.V. | Metrology parameter determination and metrology recipe selection |
| EP3435162A1 (en) | 2017-07-28 | 2019-01-30 | ASML Netherlands B.V. | Metrology method and apparatus and computer program |
| EP3454126A1 (en) | 2017-09-08 | 2019-03-13 | ASML Netherlands B.V. | Method for estimating overlay |
| EP3462239A1 (en) * | 2017-09-27 | 2019-04-03 | ASML Netherlands B.V. | Metrology in lithographic processes |
| EP3457211A1 (en) | 2017-09-13 | 2019-03-20 | ASML Netherlands B.V. | A method of aligning a pair of complementary diffraction patterns and associated metrology method and apparatus |
| EP3460574A1 (en) | 2017-09-22 | 2019-03-27 | ASML Netherlands B.V. | Method to determine a patterning process parameter |
| IL272780B2 (en) | 2017-09-22 | 2023-11-01 | Asml Netherlands Bv | A method for determining a parameter for building processes |
| US10795268B2 (en) | 2017-09-29 | 2020-10-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and apparatus for measuring overlay errors using overlay measurement patterns |
| CN111279268B (zh) * | 2017-10-26 | 2022-04-01 | Asml荷兰有限公司 | 确定所关注的参数的值的方法、清除包含关于所关注的参数的信息的信号的方法 |
| EP3492985A1 (en) * | 2017-12-04 | 2019-06-05 | ASML Netherlands B.V. | Method of determining information about a patterning process, method of reducing error in measurement data, method of calibrating a metrology process, method of selecting metrology targets |
| US10705435B2 (en) | 2018-01-12 | 2020-07-07 | Globalfoundries Inc. | Self-referencing and self-calibrating interference pattern overlay measurement |
| EP3518040A1 (en) | 2018-01-30 | 2019-07-31 | ASML Netherlands B.V. | A measurement apparatus and a method for determining a substrate grid |
| KR102544707B1 (ko) | 2018-02-27 | 2023-06-16 | 에이에스엠엘 네델란즈 비.브이. | 기판 상의 하나 이상의 구조체의 특성을 결정하기 위한 계측 장치 및 방법 |
| NL2021848A (en) | 2018-04-09 | 2018-11-06 | Stichting Vu | Holographic metrology apparatus. |
| EP3557327A1 (en) * | 2018-04-18 | 2019-10-23 | ASML Netherlands B.V. | Method of determining a value of a parameter of interest of a target formed by a patterning process |
| CN112236724B (zh) | 2018-06-08 | 2023-05-23 | Asml荷兰有限公司 | 确定衬底上的一个或更多个结构的特性的量测设备和方法 |
| EP3579052A1 (en) | 2018-06-08 | 2019-12-11 | ASML Netherlands B.V. | Metrology apparatus and method for determining a characteristic of one or more structures on a substrate |
| EP3605230A1 (en) | 2018-08-01 | 2020-02-05 | Stichting VU | Metrology apparatus and method for determining a characteristic of one or more structures on a substrate |
| NL2021852A (en) | 2018-08-01 | 2018-11-09 | Asml Netherlands Bv | Metrology apparatus and method for determining a characteristic of one or more structures on a substrate |
| CN113168103B (zh) | 2018-09-19 | 2024-11-08 | Asml荷兰有限公司 | 量测方法及其装置 |
| WO2020141140A1 (en) | 2018-12-31 | 2020-07-09 | Asml Netherlands B.V. | Metrology method |
| CN113260924B (zh) | 2018-12-31 | 2025-02-18 | Asml荷兰有限公司 | 用于重叠量测的方法及其设备 |
| EP3731018A1 (en) | 2019-04-23 | 2020-10-28 | ASML Netherlands B.V. | A method for re-imaging an image and associated metrology apparatus |
| KR102841633B1 (ko) * | 2019-07-10 | 2025-07-31 | 삼성전자주식회사 | 오버레이 보정 방법, 및 그 보정 방법을 기초로 한 포토리소그라피 방법, 반도체 소자 제조방법 및 스캐너 시스템 |
| EP3770682A1 (en) | 2019-07-25 | 2021-01-27 | ASML Netherlands B.V. | Method and system for determining information about a target structure |
| WO2021028174A1 (en) | 2019-08-14 | 2021-02-18 | Asml Netherlands B.V. | Method and metrology tool for determining information about a target structure, and cantilever probe |
| EP3839635A1 (en) | 2019-12-17 | 2021-06-23 | ASML Netherlands B.V. | Dark field digital holographic microscope and associated metrology method |
| CN114830043B (zh) | 2019-12-17 | 2025-05-30 | Asml荷兰有限公司 | 暗场数字全息显微镜和相关联的量测方法 |
| EP3876036A1 (en) | 2020-03-04 | 2021-09-08 | ASML Netherlands B.V. | Vibration isolation system and associated applications in lithography |
| CN115443399A (zh) * | 2020-04-13 | 2022-12-06 | 株式会社尼康 | 测量装置、曝光装置以及测量方法 |
| US12429781B2 (en) | 2020-06-24 | 2025-09-30 | Asml Netherlands B.V. | Metrology method and associated metrology and lithographic apparatuses |
| KR102887499B1 (ko) | 2020-07-09 | 2025-11-17 | 에이에스엠엘 네델란즈 비.브이. | 계측 방법 및 장치, 그리고 컴퓨터 프로그램 |
| EP3964892A1 (en) | 2020-09-02 | 2022-03-09 | Stichting VU | Illumination arrangement and associated dark field digital holographic microscope |
| US20240020575A1 (en) * | 2020-11-30 | 2024-01-18 | Nec Corporation | Information processing device, information processing method, and recording medium |
| EP4224254A1 (en) | 2022-02-04 | 2023-08-09 | ASML Netherlands B.V. | Metrology method and associated metrology device |
| EP4246231A1 (en) | 2022-03-18 | 2023-09-20 | Stichting VU | A method for determining a vertical position of a structure on a substrate and associated apparatuses |
| EP4246232A1 (en) | 2022-03-18 | 2023-09-20 | Stichting VU | Illumination arrangement for a metrology device and associated method |
| WO2023174648A1 (en) | 2022-03-18 | 2023-09-21 | Stichting Vu | Illumination arrangement for a metrology device and associated method |
| CN114678282B (zh) * | 2022-05-27 | 2022-08-02 | 湖北三维半导体集成创新中心有限责任公司 | 一种键合补偿方法及装置、芯片再布线方法、键合结构 |
| EP4318131A1 (en) | 2022-08-01 | 2024-02-07 | ASML Netherlands B.V. | Sensor module, illuminator, metrology device and associated metrology method |
| EP4332678A1 (en) | 2022-09-05 | 2024-03-06 | ASML Netherlands B.V. | Holographic metrology apparatus and method |
| WO2025131523A1 (en) | 2023-12-21 | 2025-06-26 | Asml Netherlands B.V. | Metrology method for a digital holographic microscope and associated computer program |
| WO2025203521A1 (ja) * | 2024-03-28 | 2025-10-02 | 株式会社ニコン | マーク計測方法、計測装置、露光装置、演算装置、プログラム及び記憶媒体 |
| WO2025233088A1 (en) | 2024-05-08 | 2025-11-13 | Asml Netherlands B.V. | Semiconductor bonding alignment systems and methods |
| CN118299285B (zh) * | 2024-06-06 | 2024-08-16 | 华芯程(杭州)科技有限公司 | 多重图形蚀刻补偿方法、装置、介质、程序产品及终端 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7170604B2 (en) * | 2002-07-03 | 2007-01-30 | Tokyo Electron Limited | Overlay metrology method and apparatus using more than one grating per measurement direction |
| US7791727B2 (en) * | 2004-08-16 | 2010-09-07 | Asml Netherlands B.V. | Method and apparatus for angular-resolved spectroscopic lithography characterization |
| US7408642B1 (en) * | 2006-02-17 | 2008-08-05 | Kla-Tencor Technologies Corporation | Registration target design for managing both reticle grid error and wafer overlay |
| US7704850B2 (en) * | 2006-09-08 | 2010-04-27 | Asml Netherlands B.V. | Semiconductor device for measuring an overlay error, method for measuring an overlay error, lithographic apparatus and device manufacturing method |
| NL1036245A1 (nl) | 2007-12-17 | 2009-06-18 | Asml Netherlands Bv | Diffraction based overlay metrology tool and method of diffraction based overlay metrology. |
| NL1036597A1 (nl) | 2008-02-29 | 2009-09-01 | Asml Netherlands Bv | Metrology method and apparatus, lithographic apparatus, and device manufacturing method. |
| NL2002962A1 (nl) * | 2008-06-11 | 2009-12-14 | Asml Netherlands Bv | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method. |
| NL2005162A (en) * | 2009-07-31 | 2011-02-02 | Asml Netherlands Bv | Methods and scatterometers, lithographic systems, and lithographic processing cells. |
| US8189202B2 (en) * | 2009-08-04 | 2012-05-29 | Zygo Corporation | Interferometer for determining overlay errors |
| SG178368A1 (en) | 2009-08-24 | 2012-04-27 | Asml Netherlands Bv | Metrology method and apparatus, lithographic apparatus, lithographic processing cell and substrate comprising metrology targets |
| DE202009012606U1 (de) | 2009-09-18 | 2010-01-14 | Sma Solar Technology Ag | Steckbare elektrische Verbindung zwischen zwei Bauteile aufweisenden Gehäusen |
| JP6008851B2 (ja) * | 2010-07-19 | 2016-10-19 | エーエスエムエル ネザーランズ ビー．ブイ． | オーバレイ誤差を決定する方法及び装置 |
| NL2007765A (en) * | 2010-11-12 | 2012-05-15 | Asml Netherlands Bv | Metrology method and inspection apparatus, lithographic system and device manufacturing method. |
| IL217843A (en) | 2011-02-11 | 2016-11-30 | Asml Netherlands Bv | A system and method for testing, a lithographic system, a cell for lithographic processing, and a method for producing a device |
| NL2009294A (en) | 2011-08-30 | 2013-03-04 | Asml Netherlands Bv | Method and apparatus for determining an overlay error. |
| NL2009508A (en) | 2011-10-24 | 2013-04-25 | Asml Netherlands Bv | Metrology method and apparatus, and device manufacturing method. |
| US10107621B2 (en) * | 2012-02-15 | 2018-10-23 | Nanometrics Incorporated | Image based overlay measurement with finite gratings |
| NL2010401A (en) | 2012-03-27 | 2013-09-30 | Asml Netherlands Bv | Metrology method and apparatus, lithographic system and device manufacturing method. |
| NL2010988A (en) | 2012-07-05 | 2014-01-07 | Asml Netherlands Bv | Metrology method and apparatus, lithographic system, device manufacturing method and substrate. |
| CN108398856B (zh) | 2013-08-07 | 2020-10-16 | Asml荷兰有限公司 | 量测方法和设备、光刻系统和器件制造方法 |
-
2014
- 2014-07-18 CN CN201810061591.1A patent/CN108398856B/zh active Active
- 2014-07-18 NL NL2013210A patent/NL2013210A/en not_active Application Discontinuation
- 2014-07-18 KR KR1020187012297A patent/KR102124204B1/ko active Active
- 2014-07-18 US US14/906,896 patent/US9910366B2/en active Active
- 2014-07-18 JP JP2016532295A patent/JP6336068B2/ja active Active
- 2014-07-18 CN CN201480044257.5A patent/CN105452962B/zh active Active
- 2014-07-18 WO PCT/EP2014/065461 patent/WO2015018625A1/en not_active Ceased
- 2014-07-18 KR KR1020167005967A patent/KR101855243B1/ko active Active
- 2014-08-04 TW TW105134143A patent/TWI600981B/zh active
- 2014-08-04 TW TW103126643A patent/TWI563345B/zh active
- 2014-08-04 TW TW106126036A patent/TWI636341B/zh active
-
2016
- 2016-01-31 IL IL243854A patent/IL243854B/en active IP Right Grant
-
2018
- 2018-03-05 US US15/912,036 patent/US10126662B2/en active Active
- 2018-05-01 JP JP2018088388A patent/JP6577086B2/ja active Active
- 2018-10-15 US US16/159,884 patent/US10331041B2/en active Active
-
2019
- 2019-05-24 US US16/421,697 patent/US10725386B2/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111095112A (zh) * | 2017-09-11 | 2020-05-01 | Asml荷兰有限公司 | 光刻过程中的量测 |
Also Published As
| Publication number | Publication date |
|---|---|
| IL243854A0 (en) | 2016-04-21 |
| JP2018142006A (ja) | 2018-09-13 |
| TWI636341B (zh) | 2018-09-21 |
| US9910366B2 (en) | 2018-03-06 |
| KR102124204B1 (ko) | 2020-06-18 |
| US20180196357A1 (en) | 2018-07-12 |
| CN108398856B (zh) | 2020-10-16 |
| WO2015018625A1 (en) | 2015-02-12 |
| TW201506554A (zh) | 2015-02-16 |
| TWI563345B (en) | 2016-12-21 |
| JP6336068B2 (ja) | 2018-06-06 |
| CN105452962A (zh) | 2016-03-30 |
| US10725386B2 (en) | 2020-07-28 |
| TWI600981B (zh) | 2017-10-01 |
| KR20180049220A (ko) | 2018-05-10 |
| KR101855243B1 (ko) | 2018-05-04 |
| KR20160042008A (ko) | 2016-04-18 |
| JP2016528549A (ja) | 2016-09-15 |
| CN105452962B (zh) | 2018-02-09 |
| US10126662B2 (en) | 2018-11-13 |
| JP6577086B2 (ja) | 2019-09-18 |
| US20190278190A1 (en) | 2019-09-12 |
| IL243854B (en) | 2021-01-31 |
| US20190049860A1 (en) | 2019-02-14 |
| TW201809902A (zh) | 2018-03-16 |
| US20160161864A1 (en) | 2016-06-09 |
| TW201704898A (zh) | 2017-02-01 |
| CN108398856A (zh) | 2018-08-14 |
| US10331041B2 (en) | 2019-06-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10725386B2 (en) | Metrology method and apparatus, lithographic system and device manufacturing method | |
| US11022900B2 (en) | Inspection apparatus and methods, substrates having metrology targets, lithographic system and device manufacturing method | |
| KR101898598B1 (ko) | 메트롤로지 방법 및 장치, 기판, 리소그래피 시스템 및 디바이스 제조 방법 | |
| US9964853B2 (en) | Method of determining dose and focus, inspection apparatus, patterning device, substrate and device manufacturing method | |
| US9331022B2 (en) | Substrate and patterning device for use in metrology, metrology method and device manufacturing method | |
| US9158194B2 (en) | Metrology method and apparatus, and device manufacturing method | |
| JP6251386B2 (ja) | クリティカルディメンション関連特性を決定する方法、検査装置およびデバイス製造方法 | |
| US9958790B2 (en) | Inspection methods, substrates having metrology targets, lithographic system and device manufacturing method | |
| TW202147041A (zh) | 包含目標配置之基板及相關聯之至少一個圖案化裝置、微影方法及度量衡方法 | |
| TW202004360A (zh) | 度量衡方法、裝置及電腦程式 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WDAP | Patent application withdrawn |
Effective date: 20150320 |
|
| WDAP | Patent application withdrawn |
Effective date: 20150320 |