NL2003404A - Inspection method and apparatus, substrate, lithographic apparatus, lithographic processing cell and device manufacturing method. - Google Patents
Inspection method and apparatus, substrate, lithographic apparatus, lithographic processing cell and device manufacturing method. Download PDFInfo
- Publication number
- NL2003404A NL2003404A NL2003404A NL2003404A NL2003404A NL 2003404 A NL2003404 A NL 2003404A NL 2003404 A NL2003404 A NL 2003404A NL 2003404 A NL2003404 A NL 2003404A NL 2003404 A NL2003404 A NL 2003404A
- Authority
- NL
- Netherlands
- Prior art keywords
- target
- substrate
- radiation
- pattern
- targets
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 170
- 238000000034 method Methods 0.000 title abstract description 56
- 238000007689 inspection Methods 0.000 title abstract description 51
- 238000004519 manufacturing process Methods 0.000 title description 8
- 238000012545 processing Methods 0.000 title description 8
- 230000005855 radiation Effects 0.000 claims abstract description 136
- 238000000059 patterning Methods 0.000 claims description 25
- 238000005286 illumination Methods 0.000 claims description 11
- 238000001459 lithography Methods 0.000 claims description 6
- 238000005259 measurement Methods 0.000 abstract description 94
- 210000001747 pupil Anatomy 0.000 abstract description 23
- 239000010410 layer Substances 0.000 description 42
- 230000003287 optical effect Effects 0.000 description 28
- 230000007717 exclusion Effects 0.000 description 27
- 238000001228 spectrum Methods 0.000 description 26
- 230000002829 reductive effect Effects 0.000 description 12
- 230000008569 process Effects 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000007654 immersion Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 4
- 239000000835 fiber Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
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- 239000011159 matrix material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
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- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000572 ellipsometry Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
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- 238000012417 linear regression Methods 0.000 description 1
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- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- 239000007787 solid Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US9737408P | 2008-09-16 | 2008-09-16 | |
| US9737408 | 2008-09-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL2003404A true NL2003404A (en) | 2010-03-17 |
Family
ID=41261667
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL2003404A NL2003404A (en) | 2008-09-16 | 2009-08-28 | Inspection method and apparatus, substrate, lithographic apparatus, lithographic processing cell and device manufacturing method. |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9494872B2 (he) |
| IL (1) | IL211409B (he) |
| NL (1) | NL2003404A (he) |
| WO (1) | WO2010031510A1 (he) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111066096A (zh) * | 2017-09-01 | 2020-04-24 | Asml荷兰有限公司 | 光学系统、量测装置及相关联的方法 |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102483582B (zh) | 2009-08-24 | 2016-01-20 | Asml荷兰有限公司 | 量测方法和设备、光刻设备、光刻处理单元和包括量测目标的衬底 |
| TWI417942B (zh) * | 2009-12-17 | 2013-12-01 | Ind Tech Res Inst | 二維陣列疊對圖樣組之設計方法、疊對誤差量測方法及其量測系統 |
| WO2012022584A1 (en) * | 2010-08-18 | 2012-02-23 | Asml Netherlands B.V. | Substrate for use in metrology, metrology method and device manufacturing method |
| US10890436B2 (en) | 2011-07-19 | 2021-01-12 | Kla Corporation | Overlay targets with orthogonal underlayer dummyfill |
| KR102473825B1 (ko) * | 2012-05-22 | 2022-12-02 | 케이엘에이 코포레이션 | 직교 하지층 더미필을 갖는 오버레이 타겟 |
| US8844352B2 (en) * | 2012-06-18 | 2014-09-30 | Rosemount Tank Radar Ab | Pulsed level gauge system with adaptive transceiver control |
| US10955359B2 (en) * | 2013-11-12 | 2021-03-23 | International Business Machines Corporation | Method for quantification of process non uniformity using model-based metrology |
| CN105814492B (zh) | 2013-12-13 | 2018-06-15 | Asml荷兰有限公司 | 检查设备和方法、光刻系统和器件制造方法 |
| KR102235615B1 (ko) * | 2014-07-29 | 2021-04-02 | 삼성전자주식회사 | 노광 공정 계측용 기판 타겟 및 노광 공정 계측 방법과 이를 이용한 집적회로 소자의 제조 방법 |
| US10883924B2 (en) * | 2014-09-08 | 2021-01-05 | The Research Foundation Of State University Of New York | Metallic gratings and measurement methods thereof |
| US9739719B2 (en) | 2014-10-31 | 2017-08-22 | Kla-Tencor Corporation | Measurement systems having linked field and pupil signal detection |
| US10072921B2 (en) | 2014-12-05 | 2018-09-11 | Kla-Tencor Corporation | Methods and systems for spectroscopic beam profile metrology having a first two dimensional detector to detect collected light transmitted by a first wavelength dispersive element |
| US10101676B2 (en) | 2015-09-23 | 2018-10-16 | KLA—Tencor Corporation | Spectroscopic beam profile overlay metrology |
| NL2017466A (en) * | 2015-09-30 | 2017-04-05 | Asml Netherlands Bv | Metrology method, target and substrate |
| US10303839B2 (en) * | 2016-06-07 | 2019-05-28 | Kla-Tencor Corporation | Electrically relevant placement of metrology targets using design analysis |
| US10438825B2 (en) | 2016-08-29 | 2019-10-08 | Kla-Tencor Corporation | Spectral reflectometry for in-situ process monitoring and control |
| CN109844917B (zh) | 2016-10-13 | 2023-07-04 | 科磊股份有限公司 | 用于过程控制的计量系统及方法 |
| JP7179742B2 (ja) * | 2017-02-10 | 2022-11-29 | ケーエルエー コーポレイション | 散乱計測オーバーレイターゲット及び方法 |
| TWI742148B (zh) * | 2017-08-28 | 2021-10-11 | 聯華電子股份有限公司 | 對準標記及其測量方法 |
| US10204867B1 (en) * | 2017-08-31 | 2019-02-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor metrology target and manufacturing method thereof |
| EP3457212A1 (en) * | 2017-09-18 | 2019-03-20 | ASML Netherlands B.V. | Method of controlling a patterning process, device manufacturing method |
| US10365211B2 (en) | 2017-09-26 | 2019-07-30 | Kla-Tencor Corporation | Systems and methods for metrology beam stabilization |
| KR102387947B1 (ko) * | 2017-11-21 | 2022-04-18 | 삼성전자주식회사 | 오버레이 패턴을 갖는 반도체 소자 |
| EP3521930A1 (en) * | 2018-02-02 | 2019-08-07 | ASML Netherlands B.V. | Method of optimizing a metrology process |
| KR20210091803A (ko) * | 2018-12-31 | 2021-07-22 | 에이에스엠엘 네델란즈 비.브이. | 오버레이 계측을 위한 방법 및 그 장치 |
| CN121075942A (zh) * | 2019-12-18 | 2025-12-05 | Asml荷兰有限公司 | 用于校正集成电路和关联设备的制造中的测量值的方法 |
| JP7792958B2 (ja) * | 2020-12-08 | 2025-12-26 | エーエスエムエル ネザーランズ ビー．ブイ． | メトロロジの方法及び関連装置 |
| CN114113138B (zh) * | 2021-11-22 | 2024-10-29 | 合肥维信诺科技有限公司 | 产品在籍检测装置 |
| US20240004310A1 (en) * | 2022-06-30 | 2024-01-04 | Intel Corporation | One-dimensional overlay marks |
| EP4571418A1 (en) * | 2023-12-11 | 2025-06-18 | ASML Netherlands B.V. | Holistic calibration |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7046376B2 (en) * | 2002-07-05 | 2006-05-16 | Therma-Wave, Inc. | Overlay targets with isolated, critical-dimension features and apparatus to measure overlay |
| CN101490538B (zh) * | 2006-08-02 | 2013-03-27 | 株式会社尼康 | 缺陷检测装置和缺陷检测方法 |
| US8072611B2 (en) * | 2007-10-12 | 2011-12-06 | Zygo Corporation | Interferometric analysis of under-resolved features |
-
2009
- 2009-08-28 NL NL2003404A patent/NL2003404A/en not_active Application Discontinuation
- 2009-09-08 US US13/060,390 patent/US9494872B2/en not_active Expired - Fee Related
- 2009-09-08 WO PCT/EP2009/006518 patent/WO2010031510A1/en not_active Ceased
-
2011
- 2011-02-24 IL IL211409A patent/IL211409B/he active IP Right Grant
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111066096A (zh) * | 2017-09-01 | 2020-04-24 | Asml荷兰有限公司 | 光学系统、量测装置及相关联的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2010031510A1 (en) | 2010-03-25 |
| IL211409A0 (en) | 2011-05-31 |
| US20110229830A1 (en) | 2011-09-22 |
| IL211409B (he) | 2019-02-28 |
| US9494872B2 (en) | 2016-11-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WDAP | Patent application withdrawn |
Effective date: 20100906 |