NL189272C - Bipolaire transistor. - Google Patents

Bipolaire transistor.

Info

Publication number
NL189272C
NL189272C NLAANVRAGE8101107,A NL8101107A NL189272C NL 189272 C NL189272 C NL 189272C NL 8101107 A NL8101107 A NL 8101107A NL 189272 C NL189272 C NL 189272C
Authority
NL
Netherlands
Prior art keywords
bipolar transistor
bipolar
transistor
Prior art date
Application number
NLAANVRAGE8101107,A
Other languages
English (en)
Dutch (nl)
Other versions
NL189272B (nl
NL8101107A (nl
Original Assignee
Nippon Telegraph & Telephone
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph & Telephone filed Critical Nippon Telegraph & Telephone
Publication of NL8101107A publication Critical patent/NL8101107A/nl
Publication of NL189272B publication Critical patent/NL189272B/xx
Application granted granted Critical
Publication of NL189272C publication Critical patent/NL189272C/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H01L29/7375—Vertical transistors having an emitter comprising one or more non-monocrystalline elements of group IV, e.g. amorphous silicon, alloys comprising group IV elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
NLAANVRAGE8101107,A 1980-03-10 1981-03-07 Bipolaire transistor. NL189272C (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3009680 1980-03-10
JP55030096A JPS5946103B2 (ja) 1980-03-10 1980-03-10 トランジスタ

Publications (3)

Publication Number Publication Date
NL8101107A NL8101107A (nl) 1981-10-01
NL189272B NL189272B (nl) 1992-09-16
NL189272C true NL189272C (nl) 1993-02-16

Family

ID=12294243

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE8101107,A NL189272C (nl) 1980-03-10 1981-03-07 Bipolaire transistor.

Country Status (7)

Country Link
US (1) US4414557A (fr)
JP (1) JPS5946103B2 (fr)
CA (1) CA1157573A (fr)
DE (1) DE3108491A1 (fr)
FR (1) FR2477777B1 (fr)
GB (1) GB2073486B (fr)
NL (1) NL189272C (fr)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2520157B1 (fr) * 1982-01-18 1985-09-13 Labo Electronique Physique Dispositif semi-conducteur du genre transistor a heterojonction(s)
US4910562A (en) * 1982-04-26 1990-03-20 International Business Machines Corporation Field induced base transistor
JPS5941877A (ja) * 1982-08-31 1984-03-08 Junichi Nishizawa フオトトランジスタ
US4794440A (en) * 1983-05-25 1988-12-27 American Telephone And Telegraph Company, At&T Bell Laboratories Heterojunction bipolar transistor
JPS59227161A (ja) * 1983-05-25 1984-12-20 アメリカン・テレフォン・アンド・テレグラフ・カムパニー バイポ−ラトランジスタ
JPS60110159A (ja) * 1983-11-21 1985-06-15 Toshiba Corp ヘテロ接合バイポ−ラトランジスタ
JPH0750714B2 (ja) * 1984-01-30 1995-05-31 日本電気株式会社 バイポーラトランジスタ
US4691215A (en) * 1985-01-09 1987-09-01 American Telephone And Telegraph Company Hot electron unipolar transistor with two-dimensional degenerate electron gas base with continuously graded composition compound emitter
GB2191036A (en) * 1986-05-23 1987-12-02 Philips Electronic Associated Hot charge-carrier transistors
SE8704121D0 (sv) * 1987-10-23 1987-10-23 Linkopings Silicon Constructio Transistor
US4985742A (en) * 1989-07-07 1991-01-15 University Of Colorado Foundation, Inc. High temperature semiconductor devices having at least one gallium nitride layer
JP3150376B2 (ja) * 1991-09-30 2001-03-26 ローム株式会社 ヘテロ接合バイポーラトランジスタの製法
US5285083A (en) * 1992-04-27 1994-02-08 The University Of British Columbia Inverted heterojunction bipolar device having undoped amorphous silicon layer
US5700701A (en) * 1992-10-30 1997-12-23 Texas Instruments Incorporated Method for reducing junction capacitance and increasing current gain in collector-up bipolar transistors
US5766262A (en) * 1996-03-29 1998-06-16 Mikhail; W. E. Michael Femoral prosthesis with spacer
US6228092B1 (en) 1999-07-29 2001-05-08 W. E. Michael Mikhail System for performing hip prosthesis surgery
US6407617B1 (en) * 1999-11-19 2002-06-18 Matsushita Electric Industrial Co., Ltd. Bias circuit and method of fabricating semiconductor device
US7005702B1 (en) * 2000-05-05 2006-02-28 International Rectifier Corporation IGBT with amorphous silicon transparent collector
CN107516670B (zh) * 2017-08-17 2019-12-10 电子科技大学 一种具有高电流上升率的栅控晶闸管

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2569347A (en) * 1948-06-26 1951-09-25 Bell Telephone Labor Inc Circuit element utilizing semiconductive material
US3780359A (en) * 1971-12-20 1973-12-18 Ibm Bipolar transistor with a heterojunction emitter and a method fabricating the same
JPS5147583B2 (fr) * 1972-12-29 1976-12-15
JPS50128697A (fr) * 1974-03-30 1975-10-09
JPS51128268A (en) * 1975-04-30 1976-11-09 Sony Corp Semiconductor unit
FR2352404A1 (fr) * 1976-05-20 1977-12-16 Comp Generale Electricite Transistor a heterojonction
JPS5368985A (en) * 1976-12-02 1978-06-19 Toshiba Corp Junction type field effect transistor
US4173763A (en) * 1977-06-09 1979-11-06 International Business Machines Corporation Heterojunction tunneling base transistor
US4160258A (en) * 1977-11-18 1979-07-03 Bell Telephone Laboratories, Incorporated Optically coupled linear bilateral transistor
US4254429A (en) * 1978-07-08 1981-03-03 Shunpei Yamazaki Hetero junction semiconductor device

Also Published As

Publication number Publication date
DE3108491C2 (fr) 1990-03-22
FR2477777A1 (fr) 1981-09-11
JPS56125871A (en) 1981-10-02
FR2477777B1 (fr) 1985-09-20
GB2073486B (en) 1984-12-19
GB2073486A (en) 1981-10-14
CA1157573A (fr) 1983-11-22
DE3108491A1 (de) 1982-04-01
US4414557A (en) 1983-11-08
NL189272B (nl) 1992-09-16
NL8101107A (nl) 1981-10-01
JPS5946103B2 (ja) 1984-11-10

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Legal Events

Date Code Title Description
A1A A request for search or an international-type search has been filed
BB A search report has been drawn up
A85 Still pending on 85-01-01
CNR Transfer of rights (patent application after its laying open for public inspection)

Free format text: NIPPON TELEGRAPH AND TELEPHONE CORPORATION

BC A request for examination has been filed
V4 Discontinued because of reaching the maximum lifetime of a patent

Free format text: 20010307