NL188609C - Variabel weerstandselement. - Google Patents
Variabel weerstandselement.Info
- Publication number
- NL188609C NL188609C NLAANVRAGE8203424,A NL8203424A NL188609C NL 188609 C NL188609 C NL 188609C NL 8203424 A NL8203424 A NL 8203424A NL 188609 C NL188609 C NL 188609C
- Authority
- NL
- Netherlands
- Prior art keywords
- resistance element
- variable resistance
- variable
- resistance
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56140175A JPS5842269A (ja) | 1981-09-05 | 1981-09-05 | Ｍｉｓ型可変抵抗器 |
| JP14017581 | 1981-09-05 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NL8203424A NL8203424A (nl) | 1983-04-05 |
| NL188609B NL188609B (nl) | 1992-03-02 |
| NL188609C true NL188609C (nl) | 1992-08-03 |
Family
ID=15262625
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NLAANVRAGE8203424,A NL188609C (nl) | 1981-09-05 | 1982-09-01 | Variabel weerstandselement. |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4665423A (xx) |
| JP (1) | JPS5842269A (xx) |
| CA (1) | CA1200924A (xx) |
| DE (1) | DE3230510A1 (xx) |
| FR (1) | FR2512589B1 (xx) |
| GB (1) | GB2105110B (xx) |
| NL (1) | NL188609C (xx) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2154820B (en) * | 1984-01-23 | 1988-05-25 | Int Rectifier Corp | Photovoltaic relay |
| JP3283736B2 (ja) * | 1995-09-30 | 2002-05-20 | 日本電気株式会社 | 半導体集積回路装置 |
| JPH1174531A (ja) * | 1997-08-28 | 1999-03-16 | Mitsubishi Electric Corp | 半導体集積回路装置 |
| SE518797C2 (sv) * | 2000-07-19 | 2002-11-19 | Ericsson Telefon Ab L M | Effekt-LDMOS-transistor innefattande ett flertal parallellkopplade transistorsegment med olika tröskelspänningar |
| AU2001283217A1 (en) | 2000-08-08 | 2002-02-18 | Advanced Power Technology, Inc. | Power mos device with asymmetrical channel structure |
| US6404022B1 (en) * | 2001-02-26 | 2002-06-11 | Ericsson Inc. | AM/PM non-linearities in FETs |
| JP4052923B2 (ja) * | 2002-10-25 | 2008-02-27 | 株式会社ルネサステクノロジ | 半導体装置 |
| US7049875B2 (en) * | 2004-06-10 | 2006-05-23 | Theta Microelectronics, Inc. | One-pin automatic tuning of MOSFET resistors |
| DE102005009138A1 (de) * | 2005-03-01 | 2006-09-07 | Newlogic Technologies Ag | Widerstands-Schaltkreis |
| TWI562313B (en) * | 2010-09-06 | 2016-12-11 | shu lu Chen | Electrical switch using a recessed channel gated resistor structure and method for three dimensional integration of semiconductor device |
| TWI646658B (zh) * | 2014-05-30 | 2019-01-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3374406A (en) * | 1964-06-01 | 1968-03-19 | Rca Corp | Insulated-gate field-effect transistor |
| BE666834A (xx) * | 1964-07-13 | |||
| CA1040321A (en) * | 1974-07-23 | 1978-10-10 | Alfred C. Ipri | Polycrystalline silicon resistive device for integrated circuits and method for making same |
| DE2435606C3 (de) * | 1974-07-24 | 1979-03-01 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Reihenschaltung aus Feldeffekttransistoren zur Realisierung eines hxxochohmigen linearen Widerstandes |
| US4001612A (en) * | 1975-12-17 | 1977-01-04 | International Business Machines Corporation | Linear resistance element for lsi circuitry |
| JPS5411512U (xx) * | 1977-06-28 | 1979-01-25 | ||
| DE2738185A1 (de) * | 1977-08-24 | 1979-03-01 | Siemens Ag | Widerstand fuer mos-integrierte schaltkreise |
| GB2009502B (en) * | 1977-12-06 | 1982-03-10 | Rockwell International Corp | Field effect semiconductor device |
| JPS554948A (en) * | 1978-06-28 | 1980-01-14 | Hitachi Ltd | Mis resistance circuit |
| DE3026361A1 (de) * | 1980-07-11 | 1982-02-04 | Siemens AG, 1000 Berlin und 8000 München | Aus mindestens zwei monolitisch zusammengefassten mis-feldeffekttransistoren bestehender elektrischer widerstand fuer integrierte halbleiterschaltungen |
-
1981
- 1981-09-05 JP JP56140175A patent/JPS5842269A/ja active Pending
-
1982
- 1982-08-17 DE DE19823230510 patent/DE3230510A1/de active Granted
- 1982-08-30 CA CA000410371A patent/CA1200924A/en not_active Expired
- 1982-08-31 GB GB08224828A patent/GB2105110B/en not_active Expired
- 1982-09-01 NL NLAANVRAGE8203424,A patent/NL188609C/xx not_active IP Right Cessation
- 1982-09-06 FR FR8215113A patent/FR2512589B1/fr not_active Expired
-
1985
- 1985-10-02 US US06/783,063 patent/US4665423A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| GB2105110B (en) | 1985-04-11 |
| CA1200924A (en) | 1986-02-18 |
| FR2512589B1 (fr) | 1987-03-27 |
| DE3230510A1 (de) | 1983-03-24 |
| NL188609B (nl) | 1992-03-02 |
| FR2512589A1 (fr) | 1983-03-11 |
| GB2105110A (en) | 1983-03-16 |
| US4665423A (en) | 1987-05-12 |
| JPS5842269A (ja) | 1983-03-11 |
| NL8203424A (nl) | 1983-04-05 |
| DE3230510C2 (xx) | 1987-05-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1A | A request for search or an international-type search has been filed | ||
| BB | A search report has been drawn up | ||
| A85 | Still pending on 85-01-01 | ||
| BC | A request for examination has been filed | ||
| CNR | Transfer of rights (patent application after its laying open for public inspection) |
Free format text: NIPPON TELEGRAPH AND TELEPHONE CORPORATION |
|
| V1 | Lapsed because of non-payment of the annual fee |