NL178467C - Meervoudig gelaagde halfgeleiderlaser met trillingsstrook. - Google Patents
Meervoudig gelaagde halfgeleiderlaser met trillingsstrook.Info
- Publication number
- NL178467C NL178467C NLAANVRAGE7702592,A NL7702592A NL178467C NL 178467 C NL178467 C NL 178467C NL 7702592 A NL7702592 A NL 7702592A NL 178467 C NL178467 C NL 178467C
- Authority
- NL
- Netherlands
- Prior art keywords
- semiconductor laser
- layered semiconductor
- multiple layered
- vibration strip
- vibration
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2644076A JPS52109884A (en) | 1976-03-11 | 1976-03-11 | Stripe type hetero junction semoonductor laser |
Publications (3)
Publication Number | Publication Date |
---|---|
NL7702592A NL7702592A (nl) | 1977-09-13 |
NL178467B NL178467B (nl) | 1985-10-16 |
NL178467C true NL178467C (nl) | 1986-03-17 |
Family
ID=12193558
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NLAANVRAGE7702592,A NL178467C (nl) | 1976-03-11 | 1977-03-10 | Meervoudig gelaagde halfgeleiderlaser met trillingsstrook. |
Country Status (6)
Country | Link |
---|---|
US (1) | US4105955A (de) |
JP (1) | JPS52109884A (de) |
DE (1) | DE2710813A1 (de) |
FR (1) | FR2506532A1 (de) |
GB (1) | GB1556527A (de) |
NL (1) | NL178467C (de) |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1569369A (en) * | 1977-04-01 | 1980-06-11 | Standard Telephones Cables Ltd | Injection lasers |
GB1558642A (en) * | 1977-04-01 | 1980-01-09 | Standard Telephones Cables Ltd | Injection lasers |
JPS5460878A (en) * | 1977-10-24 | 1979-05-16 | Nec Corp | Semiconductor laser element |
JPS5474686A (en) * | 1977-11-28 | 1979-06-14 | Agency Of Ind Science & Technol | Visible semiconductor laser and its manufacture |
US4309668A (en) * | 1978-02-20 | 1982-01-05 | Nippon Electric Co., Ltd. | Stripe-geometry double heterojunction laser device |
JPS54115088A (en) * | 1978-02-28 | 1979-09-07 | Nec Corp | Double hetero junction laser element of stripe type |
DE2822146C2 (de) * | 1978-05-20 | 1982-11-25 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Heterostruktur-Halbleiterlaserdiode und Verfahren zur Herstellung einer Heterostruktur-Halbleiterdiode |
US4184171A (en) * | 1978-07-05 | 1980-01-15 | Bell Telephone Laboratories, Incorporated | Light emitting diodes which emit in the infrared |
DE2933035A1 (de) * | 1979-08-16 | 1981-03-26 | Licentia Patent-Verwaltungs-Gmbh, 60596 Frankfurt | Halbleiterlaser |
JPS5634215U (de) * | 1979-08-22 | 1981-04-03 | ||
FR2465337A1 (fr) * | 1979-09-11 | 1981-03-20 | Landreau Jean | Procede de fabrication d'un laser a semi-conducteur a confinements transverses optique et electrique et laser obtenu par ce procede |
NL7908969A (nl) * | 1979-12-13 | 1981-07-16 | Philips Nv | Halfgeleiderlaser. |
JPS575384A (en) * | 1980-06-13 | 1982-01-12 | Matsushita Electric Ind Co Ltd | Semiconductor laser device |
JPS5723292A (en) * | 1980-07-16 | 1982-02-06 | Sony Corp | Semiconductor laser device and manufacture thereof |
JPS57112090A (en) * | 1980-12-29 | 1982-07-12 | Fujitsu Ltd | Semiconductor laser |
US4523212A (en) * | 1982-03-12 | 1985-06-11 | The United States Of America As Represented By The Secretary Of The Air Force | Simultaneous doped layers for semiconductor devices |
US4517674A (en) * | 1982-08-31 | 1985-05-14 | The United States Of America As Represented By The Secretary Of The Navy | Zinc-diffused narrow stripe AlGaAs/GaAs double heterostructure laser |
JPS6066891A (ja) * | 1983-09-22 | 1985-04-17 | Toshiba Corp | 半導体レ−ザ装置 |
JP2529854B2 (ja) * | 1987-06-26 | 1996-09-04 | 国際電信電話株式会社 | 赤外半導体レ−ザ |
JP3024611B2 (ja) | 1997-10-20 | 2000-03-21 | 日本電気株式会社 | 半導体レーザおよびその製造方法 |
US6301282B1 (en) * | 1998-07-29 | 2001-10-09 | Lucent Technologies Inc. | Long wavelength semiconductor lasers incorporating waveguides based on surface plasmons |
US7057256B2 (en) | 2001-05-25 | 2006-06-06 | President & Fellows Of Harvard College | Silicon-based visible and near-infrared optoelectric devices |
US7442629B2 (en) | 2004-09-24 | 2008-10-28 | President & Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
US7733289B2 (en) * | 2007-10-31 | 2010-06-08 | The Invention Science Fund I, Llc | Electromagnetic compression apparatus, methods, and systems |
US20090218523A1 (en) * | 2008-02-29 | 2009-09-03 | Searete Llc, A Limited Liability Corporation Of The State Of Delaware | Electromagnetic cloaking and translation apparatus, methods, and systems |
US20090218524A1 (en) * | 2008-02-29 | 2009-09-03 | Searete Llc, A Limited Liability Corporation Of The State Of Delaware | Electromagnetic cloaking and translation apparatus, methods, and systems |
US8773775B2 (en) * | 2008-05-30 | 2014-07-08 | The Invention Science Fund I Llc | Emitting and negatively-refractive focusing apparatus, methods, and systems |
US9019632B2 (en) * | 2008-05-30 | 2015-04-28 | The Invention Science Fund I Llc | Negatively-refractive focusing and sensing apparatus, methods, and systems |
US7869131B2 (en) * | 2008-05-30 | 2011-01-11 | The Invention Science Fund I | Emitting and negatively-refractive focusing apparatus, methods, and systems |
US8638504B2 (en) * | 2008-05-30 | 2014-01-28 | The Invention Science Fund I Llc | Emitting and negatively-refractive focusing apparatus, methods, and systems |
US8493669B2 (en) * | 2008-05-30 | 2013-07-23 | The Invention Science Fund I Llc | Focusing and sensing apparatus, methods, and systems |
US7872812B2 (en) * | 2008-05-30 | 2011-01-18 | The Invention Science Fund I, Llc | Emitting and focusing apparatus, methods, and systems |
US8817380B2 (en) * | 2008-05-30 | 2014-08-26 | The Invention Science Fund I Llc | Emitting and negatively-refractive focusing apparatus, methods, and systems |
US8638505B2 (en) * | 2008-05-30 | 2014-01-28 | The Invention Science Fund 1 Llc | Negatively-refractive focusing and sensing apparatus, methods, and systems |
US8531782B2 (en) * | 2008-05-30 | 2013-09-10 | The Invention Science Fund I Llc | Emitting and focusing apparatus, methods, and systems |
US8164837B2 (en) * | 2008-05-30 | 2012-04-24 | The Invention Science Fund I, Llc | Negatively-refractive focusing and sensing apparatus, methods, and systems |
US8736982B2 (en) * | 2008-05-30 | 2014-05-27 | The Invention Science Fund I Llc | Emitting and focusing apparatus, methods, and systems |
US8773776B2 (en) * | 2008-05-30 | 2014-07-08 | The Invention Science Fund I Llc | Emitting and negatively-refractive focusing apparatus, methods, and systems |
US8837058B2 (en) * | 2008-07-25 | 2014-09-16 | The Invention Science Fund I Llc | Emitting and negatively-refractive focusing apparatus, methods, and systems |
US8730591B2 (en) * | 2008-08-07 | 2014-05-20 | The Invention Science Fund I Llc | Negatively-refractive focusing and sensing apparatus, methods, and systems |
US8692198B2 (en) | 2010-04-21 | 2014-04-08 | Sionyx, Inc. | Photosensitive imaging devices and associated methods |
EP2583312A2 (de) | 2010-06-18 | 2013-04-24 | Sionyx, Inc. | Lichtempfindliche hochgeschwindigkeitsvorrichtungen und verfahren dafür |
US9496308B2 (en) | 2011-06-09 | 2016-11-15 | Sionyx, Llc | Process module for increasing the response of backside illuminated photosensitive imagers and associated methods |
US20130016203A1 (en) | 2011-07-13 | 2013-01-17 | Saylor Stephen D | Biometric imaging devices and associated methods |
US9209345B2 (en) | 2013-06-29 | 2015-12-08 | Sionyx, Inc. | Shallow trench textured regions and associated methods |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS502235B1 (de) * | 1970-09-07 | 1975-01-24 | ||
DE2137892C3 (de) * | 1971-07-29 | 1978-05-18 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Halbleiterlaser |
US3993964A (en) * | 1974-07-26 | 1976-11-23 | Nippon Electric Company, Ltd. | Double heterostructure stripe geometry semiconductor laser device |
US3790902A (en) * | 1972-09-05 | 1974-02-05 | Bell Telephone Labor Inc | Fundamental transverse mode operation in solid state lasers |
JPS5148959B2 (de) * | 1973-04-10 | 1976-12-23 | ||
JPS5751276B2 (de) * | 1973-10-23 | 1982-11-01 | ||
US3958263A (en) * | 1973-11-12 | 1976-05-18 | Bell Telephone Laboratories, Incorporated | Stress reduction in algaas-algaasp multilayer structures |
JPS50159288A (de) * | 1974-06-11 | 1975-12-23 | ||
GB1482936A (en) * | 1974-10-29 | 1977-08-17 | Standard Telephones Cables Ltd | Semiconductor lasers |
GB1531238A (en) * | 1975-01-09 | 1978-11-08 | Standard Telephones Cables Ltd | Injection lasers |
-
1976
- 1976-03-11 JP JP2644076A patent/JPS52109884A/ja active Granted
-
1977
- 1977-03-09 US US05/775,839 patent/US4105955A/en not_active Expired - Lifetime
- 1977-03-10 FR FR7707175A patent/FR2506532A1/fr active Granted
- 1977-03-10 NL NLAANVRAGE7702592,A patent/NL178467C/xx not_active IP Right Cessation
- 1977-03-11 DE DE19772710813 patent/DE2710813A1/de active Granted
- 1977-03-11 GB GB10486/77A patent/GB1556527A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US4105955A (en) | 1978-08-08 |
DE2710813A1 (de) | 1977-09-22 |
FR2506532B1 (de) | 1983-11-25 |
NL7702592A (nl) | 1977-09-13 |
GB1556527A (en) | 1979-11-28 |
JPS5641190B2 (de) | 1981-09-26 |
DE2710813C2 (de) | 1988-01-14 |
FR2506532A1 (fr) | 1982-11-26 |
NL178467B (nl) | 1985-10-16 |
JPS52109884A (en) | 1977-09-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
BB | A search report has been drawn up | ||
BC | A request for examination has been filed | ||
A85 | Still pending on 85-01-01 | ||
DNT | Communications of changes of names of applicants whose applications have been laid open to public inspection |
Free format text: NEC CORPORATION |
|
V1 | Lapsed because of non-payment of the annual fee |