FR2506532A1 - Laser a heterostructure comprenant une region en forme de bande definie dans la couche active par une difference de dopage - Google Patents

Laser a heterostructure comprenant une region en forme de bande definie dans la couche active par une difference de dopage

Info

Publication number
FR2506532A1
FR2506532A1 FR7707175A FR7707175A FR2506532A1 FR 2506532 A1 FR2506532 A1 FR 2506532A1 FR 7707175 A FR7707175 A FR 7707175A FR 7707175 A FR7707175 A FR 7707175A FR 2506532 A1 FR2506532 A1 FR 2506532A1
Authority
FR
France
Prior art keywords
band
shaped region
region
laser
region defined
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7707175A
Other languages
English (en)
Other versions
FR2506532B1 (fr
Inventor
Izuo Hayashi
Roy Lang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Publication of FR2506532A1 publication Critical patent/FR2506532A1/fr
Application granted granted Critical
Publication of FR2506532B1 publication Critical patent/FR2506532B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

LA PRESENTE INVENTION CONCERNE UN LASER A HETEROSTRUCTURE COMPRENANT UNE REGION EN FORME DE BANDE DEFINIE DANS LA COUCHE ACTIVE PAR UNE DIFFERENCE DE DOPAGE. DANS UN LASER A HETEROJONCTION COMPRENANT UNE COUCHE ACTIVE 42 DANS LAQUELLE SE PRODUIT L'EFFET LASER, UNE REGION EN FORME DE BANDE 60 EST DOPEE DE FACON DISTINCTE POUR FOURNIR A CETTE REGION UNE CONSTANTE DIELECTRIQUE PLUS ELEVEE, DE PREFERENCE D'ENVIRON 0,01 A 1 PAR RAPPORT A LA REGION CONTIGUE, D'OU IL RESULTE QUE L'OSCILLATION LASER QUI EST CONFINEE A LA COUCHE ACTIVE PAR LES HETEROJONCTIONS EST EN OUTRE CONFINEE A LA REGION DE BANDE DANS LE SENS DE LA LARGEUR. LA BANDE PEUT AVOIR UNE LARGEUR COMPRISE ENTRE ENVIRON 1MICRON ET QUELQUES DIZAINES DE MICRONS. DES PUISSANCES DE SORTIE EN MONOMODE ALLANT JUSQU'A 10 ET 30W EN CONTINU ET EN IMPULSIONS ONT ETE OBSERVEES. APPLICATION AUX LASERS COUPLES A DES FIBRES OPTIQUES.
FR7707175A 1976-03-11 1977-03-10 Laser a heterostructure comprenant une region en forme de bande definie dans la couche active par une difference de dopage Granted FR2506532A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2644076A JPS52109884A (en) 1976-03-11 1976-03-11 Stripe type hetero junction semoonductor laser

Publications (2)

Publication Number Publication Date
FR2506532A1 true FR2506532A1 (fr) 1982-11-26
FR2506532B1 FR2506532B1 (fr) 1983-11-25

Family

ID=12193558

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7707175A Granted FR2506532A1 (fr) 1976-03-11 1977-03-10 Laser a heterostructure comprenant une region en forme de bande definie dans la couche active par une difference de dopage

Country Status (6)

Country Link
US (1) US4105955A (fr)
JP (1) JPS52109884A (fr)
DE (1) DE2710813A1 (fr)
FR (1) FR2506532A1 (fr)
GB (1) GB1556527A (fr)
NL (1) NL178467C (fr)

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GB1569369A (en) * 1977-04-01 1980-06-11 Standard Telephones Cables Ltd Injection lasers
GB1558642A (en) * 1977-04-01 1980-01-09 Standard Telephones Cables Ltd Injection lasers
JPS5460878A (en) * 1977-10-24 1979-05-16 Nec Corp Semiconductor laser element
JPS5474686A (en) * 1977-11-28 1979-06-14 Agency Of Ind Science & Technol Visible semiconductor laser and its manufacture
US4309668A (en) * 1978-02-20 1982-01-05 Nippon Electric Co., Ltd. Stripe-geometry double heterojunction laser device
JPS54115088A (en) * 1978-02-28 1979-09-07 Nec Corp Double hetero junction laser element of stripe type
DE2822146C2 (de) * 1978-05-20 1982-11-25 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Heterostruktur-Halbleiterlaserdiode und Verfahren zur Herstellung einer Heterostruktur-Halbleiterdiode
US4184171A (en) * 1978-07-05 1980-01-15 Bell Telephone Laboratories, Incorporated Light emitting diodes which emit in the infrared
DE2933035A1 (de) * 1979-08-16 1981-03-26 Licentia Patent-Verwaltungs-Gmbh, 60596 Frankfurt Halbleiterlaser
JPS5634215U (fr) * 1979-08-22 1981-04-03
FR2465337A1 (fr) * 1979-09-11 1981-03-20 Landreau Jean Procede de fabrication d'un laser a semi-conducteur a confinements transverses optique et electrique et laser obtenu par ce procede
NL7908969A (nl) * 1979-12-13 1981-07-16 Philips Nv Halfgeleiderlaser.
JPS575384A (en) * 1980-06-13 1982-01-12 Matsushita Electric Ind Co Ltd Semiconductor laser device
JPS5723292A (en) * 1980-07-16 1982-02-06 Sony Corp Semiconductor laser device and manufacture thereof
JPS57112090A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Semiconductor laser
US4523212A (en) * 1982-03-12 1985-06-11 The United States Of America As Represented By The Secretary Of The Air Force Simultaneous doped layers for semiconductor devices
US4517674A (en) * 1982-08-31 1985-05-14 The United States Of America As Represented By The Secretary Of The Navy Zinc-diffused narrow stripe AlGaAs/GaAs double heterostructure laser
JPS6066891A (ja) * 1983-09-22 1985-04-17 Toshiba Corp 半導体レ−ザ装置
JP2529854B2 (ja) * 1987-06-26 1996-09-04 国際電信電話株式会社 赤外半導体レ−ザ
JP3024611B2 (ja) 1997-10-20 2000-03-21 日本電気株式会社 半導体レーザおよびその製造方法
US6301282B1 (en) * 1998-07-29 2001-10-09 Lucent Technologies Inc. Long wavelength semiconductor lasers incorporating waveguides based on surface plasmons
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US7733289B2 (en) * 2007-10-31 2010-06-08 The Invention Science Fund I, Llc Electromagnetic compression apparatus, methods, and systems
US20090218523A1 (en) * 2008-02-29 2009-09-03 Searete Llc, A Limited Liability Corporation Of The State Of Delaware Electromagnetic cloaking and translation apparatus, methods, and systems
US20090218524A1 (en) * 2008-02-29 2009-09-03 Searete Llc, A Limited Liability Corporation Of The State Of Delaware Electromagnetic cloaking and translation apparatus, methods, and systems
US8736982B2 (en) * 2008-05-30 2014-05-27 The Invention Science Fund I Llc Emitting and focusing apparatus, methods, and systems
US8773775B2 (en) * 2008-05-30 2014-07-08 The Invention Science Fund I Llc Emitting and negatively-refractive focusing apparatus, methods, and systems
US9019632B2 (en) * 2008-05-30 2015-04-28 The Invention Science Fund I Llc Negatively-refractive focusing and sensing apparatus, methods, and systems
US7869131B2 (en) * 2008-05-30 2011-01-11 The Invention Science Fund I Emitting and negatively-refractive focusing apparatus, methods, and systems
US8773776B2 (en) * 2008-05-30 2014-07-08 The Invention Science Fund I Llc Emitting and negatively-refractive focusing apparatus, methods, and systems
US8531782B2 (en) * 2008-05-30 2013-09-10 The Invention Science Fund I Llc Emitting and focusing apparatus, methods, and systems
US8493669B2 (en) * 2008-05-30 2013-07-23 The Invention Science Fund I Llc Focusing and sensing apparatus, methods, and systems
US7872812B2 (en) * 2008-05-30 2011-01-18 The Invention Science Fund I, Llc Emitting and focusing apparatus, methods, and systems
US8638505B2 (en) * 2008-05-30 2014-01-28 The Invention Science Fund 1 Llc Negatively-refractive focusing and sensing apparatus, methods, and systems
US8638504B2 (en) * 2008-05-30 2014-01-28 The Invention Science Fund I Llc Emitting and negatively-refractive focusing apparatus, methods, and systems
US8817380B2 (en) * 2008-05-30 2014-08-26 The Invention Science Fund I Llc Emitting and negatively-refractive focusing apparatus, methods, and systems
US8164837B2 (en) * 2008-05-30 2012-04-24 The Invention Science Fund I, Llc Negatively-refractive focusing and sensing apparatus, methods, and systems
US8837058B2 (en) * 2008-07-25 2014-09-16 The Invention Science Fund I Llc Emitting and negatively-refractive focusing apparatus, methods, and systems
US8730591B2 (en) * 2008-08-07 2014-05-20 The Invention Science Fund I Llc Negatively-refractive focusing and sensing apparatus, methods, and systems
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
US20120146172A1 (en) 2010-06-18 2012-06-14 Sionyx, Inc. High Speed Photosensitive Devices and Associated Methods
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
WO2013010127A2 (fr) 2011-07-13 2013-01-17 Sionyx, Inc. Dispositifs de prise d'images biométriques et procédés associés
US9209345B2 (en) 2013-06-29 2015-12-08 Sionyx, Inc. Shallow trench textured regions and associated methods

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3783351A (en) * 1970-09-07 1974-01-01 Hitachi Ltd Semiconductor laser device and method for manufacturing the same
US4011113A (en) * 1975-01-09 1977-03-08 International Standard Electric Corporation Method of making injection lasers by epitaxial deposition and selective etching

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2137892C3 (de) * 1971-07-29 1978-05-18 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiterlaser
US3993964A (en) * 1974-07-26 1976-11-23 Nippon Electric Company, Ltd. Double heterostructure stripe geometry semiconductor laser device
US3790902A (en) * 1972-09-05 1974-02-05 Bell Telephone Labor Inc Fundamental transverse mode operation in solid state lasers
JPS5148959B2 (fr) * 1973-04-10 1976-12-23
JPS5751276B2 (fr) * 1973-10-23 1982-11-01
US3958263A (en) * 1973-11-12 1976-05-18 Bell Telephone Laboratories, Incorporated Stress reduction in algaas-algaasp multilayer structures
JPS50159288A (fr) * 1974-06-11 1975-12-23
GB1482936A (en) * 1974-10-29 1977-08-17 Standard Telephones Cables Ltd Semiconductor lasers

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3783351A (en) * 1970-09-07 1974-01-01 Hitachi Ltd Semiconductor laser device and method for manufacturing the same
US4011113A (en) * 1975-01-09 1977-03-08 International Standard Electric Corporation Method of making injection lasers by epitaxial deposition and selective etching

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/74 *

Also Published As

Publication number Publication date
US4105955A (en) 1978-08-08
GB1556527A (en) 1979-11-28
DE2710813A1 (de) 1977-09-22
FR2506532B1 (fr) 1983-11-25
JPS5641190B2 (fr) 1981-09-26
NL178467B (nl) 1985-10-16
NL178467C (nl) 1986-03-17
NL7702592A (nl) 1977-09-13
DE2710813C2 (fr) 1988-01-14
JPS52109884A (en) 1977-09-14

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