NL7702592A - Meervoudig gelaagde halfgeleiderlaser met een strookvormig stralingsgebied. - Google Patents

Meervoudig gelaagde halfgeleiderlaser met een strookvormig stralingsgebied.

Info

Publication number
NL7702592A
NL7702592A NL7702592A NL7702592A NL7702592A NL 7702592 A NL7702592 A NL 7702592A NL 7702592 A NL7702592 A NL 7702592A NL 7702592 A NL7702592 A NL 7702592A NL 7702592 A NL7702592 A NL 7702592A
Authority
NL
Netherlands
Prior art keywords
semiconductor laser
radiation area
layered semiconductor
striped
striped radiation
Prior art date
Application number
NL7702592A
Other languages
English (en)
Other versions
NL178467C (nl
NL178467B (nl
Original Assignee
Nippon Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co filed Critical Nippon Electric Co
Publication of NL7702592A publication Critical patent/NL7702592A/nl
Publication of NL178467B publication Critical patent/NL178467B/nl
Application granted granted Critical
Publication of NL178467C publication Critical patent/NL178467C/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
NLAANVRAGE7702592,A 1976-03-11 1977-03-10 Meervoudig gelaagde halfgeleiderlaser met trillingsstrook. NL178467C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2644076A JPS52109884A (en) 1976-03-11 1976-03-11 Stripe type hetero junction semoonductor laser

Publications (3)

Publication Number Publication Date
NL7702592A true NL7702592A (nl) 1977-09-13
NL178467B NL178467B (nl) 1985-10-16
NL178467C NL178467C (nl) 1986-03-17

Family

ID=12193558

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7702592,A NL178467C (nl) 1976-03-11 1977-03-10 Meervoudig gelaagde halfgeleiderlaser met trillingsstrook.

Country Status (6)

Country Link
US (1) US4105955A (nl)
JP (1) JPS52109884A (nl)
DE (1) DE2710813A1 (nl)
FR (1) FR2506532A1 (nl)
GB (1) GB1556527A (nl)
NL (1) NL178467C (nl)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1558642A (en) * 1977-04-01 1980-01-09 Standard Telephones Cables Ltd Injection lasers
GB1569369A (en) * 1977-04-01 1980-06-11 Standard Telephones Cables Ltd Injection lasers
JPS5460878A (en) * 1977-10-24 1979-05-16 Nec Corp Semiconductor laser element
JPS5474686A (en) * 1977-11-28 1979-06-14 Agency Of Ind Science & Technol Visible semiconductor laser and its manufacture
US4309668A (en) * 1978-02-20 1982-01-05 Nippon Electric Co., Ltd. Stripe-geometry double heterojunction laser device
JPS54115088A (en) * 1978-02-28 1979-09-07 Nec Corp Double hetero junction laser element of stripe type
DE2822146C2 (de) * 1978-05-20 1982-11-25 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Heterostruktur-Halbleiterlaserdiode und Verfahren zur Herstellung einer Heterostruktur-Halbleiterdiode
US4184171A (en) * 1978-07-05 1980-01-15 Bell Telephone Laboratories, Incorporated Light emitting diodes which emit in the infrared
DE2933035A1 (de) * 1979-08-16 1981-03-26 Licentia Patent-Verwaltungs-Gmbh, 60596 Frankfurt Halbleiterlaser
JPS5634215U (nl) * 1979-08-22 1981-04-03
FR2465337A1 (fr) * 1979-09-11 1981-03-20 Landreau Jean Procede de fabrication d'un laser a semi-conducteur a confinements transverses optique et electrique et laser obtenu par ce procede
NL7908969A (nl) * 1979-12-13 1981-07-16 Philips Nv Halfgeleiderlaser.
JPS575384A (en) * 1980-06-13 1982-01-12 Matsushita Electric Ind Co Ltd Semiconductor laser device
JPS5723292A (en) * 1980-07-16 1982-02-06 Sony Corp Semiconductor laser device and manufacture thereof
JPS57112090A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Semiconductor laser
US4523212A (en) * 1982-03-12 1985-06-11 The United States Of America As Represented By The Secretary Of The Air Force Simultaneous doped layers for semiconductor devices
US4517674A (en) * 1982-08-31 1985-05-14 The United States Of America As Represented By The Secretary Of The Navy Zinc-diffused narrow stripe AlGaAs/GaAs double heterostructure laser
JPS6066891A (ja) * 1983-09-22 1985-04-17 Toshiba Corp 半導体レ−ザ装置
JP2529854B2 (ja) * 1987-06-26 1996-09-04 国際電信電話株式会社 赤外半導体レ−ザ
JP3024611B2 (ja) 1997-10-20 2000-03-21 日本電気株式会社 半導体レーザおよびその製造方法
US6301282B1 (en) * 1998-07-29 2001-10-09 Lucent Technologies Inc. Long wavelength semiconductor lasers incorporating waveguides based on surface plasmons
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US7442629B2 (en) * 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US7733289B2 (en) * 2007-10-31 2010-06-08 The Invention Science Fund I, Llc Electromagnetic compression apparatus, methods, and systems
US20090218523A1 (en) * 2008-02-29 2009-09-03 Searete Llc, A Limited Liability Corporation Of The State Of Delaware Electromagnetic cloaking and translation apparatus, methods, and systems
US20090218524A1 (en) * 2008-02-29 2009-09-03 Searete Llc, A Limited Liability Corporation Of The State Of Delaware Electromagnetic cloaking and translation apparatus, methods, and systems
US8817380B2 (en) * 2008-05-30 2014-08-26 The Invention Science Fund I Llc Emitting and negatively-refractive focusing apparatus, methods, and systems
US8638505B2 (en) * 2008-05-30 2014-01-28 The Invention Science Fund 1 Llc Negatively-refractive focusing and sensing apparatus, methods, and systems
US8638504B2 (en) * 2008-05-30 2014-01-28 The Invention Science Fund I Llc Emitting and negatively-refractive focusing apparatus, methods, and systems
US8773775B2 (en) * 2008-05-30 2014-07-08 The Invention Science Fund I Llc Emitting and negatively-refractive focusing apparatus, methods, and systems
US9019632B2 (en) * 2008-05-30 2015-04-28 The Invention Science Fund I Llc Negatively-refractive focusing and sensing apparatus, methods, and systems
US8164837B2 (en) * 2008-05-30 2012-04-24 The Invention Science Fund I, Llc Negatively-refractive focusing and sensing apparatus, methods, and systems
US7869131B2 (en) * 2008-05-30 2011-01-11 The Invention Science Fund I Emitting and negatively-refractive focusing apparatus, methods, and systems
US8773776B2 (en) * 2008-05-30 2014-07-08 The Invention Science Fund I Llc Emitting and negatively-refractive focusing apparatus, methods, and systems
US8531782B2 (en) * 2008-05-30 2013-09-10 The Invention Science Fund I Llc Emitting and focusing apparatus, methods, and systems
US8736982B2 (en) * 2008-05-30 2014-05-27 The Invention Science Fund I Llc Emitting and focusing apparatus, methods, and systems
US8493669B2 (en) * 2008-05-30 2013-07-23 The Invention Science Fund I Llc Focusing and sensing apparatus, methods, and systems
US7872812B2 (en) * 2008-05-30 2011-01-18 The Invention Science Fund I, Llc Emitting and focusing apparatus, methods, and systems
US8837058B2 (en) * 2008-07-25 2014-09-16 The Invention Science Fund I Llc Emitting and negatively-refractive focusing apparatus, methods, and systems
US8730591B2 (en) * 2008-08-07 2014-05-20 The Invention Science Fund I Llc Negatively-refractive focusing and sensing apparatus, methods, and systems
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
US20120146172A1 (en) 2010-06-18 2012-06-14 Sionyx, Inc. High Speed Photosensitive Devices and Associated Methods
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
JP2014525091A (ja) 2011-07-13 2014-09-25 サイオニクス、インク． 生体撮像装置および関連方法
US9209345B2 (en) 2013-06-29 2015-12-08 Sionyx, Inc. Shallow trench textured regions and associated methods

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS502235B1 (nl) * 1970-09-07 1975-01-24
DE2137892C3 (de) * 1971-07-29 1978-05-18 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiterlaser
US3993964A (en) * 1974-07-26 1976-11-23 Nippon Electric Company, Ltd. Double heterostructure stripe geometry semiconductor laser device
US3790902A (en) * 1972-09-05 1974-02-05 Bell Telephone Labor Inc Fundamental transverse mode operation in solid state lasers
JPS5148959B2 (nl) * 1973-04-10 1976-12-23
JPS5751276B2 (nl) * 1973-10-23 1982-11-01
US3958263A (en) * 1973-11-12 1976-05-18 Bell Telephone Laboratories, Incorporated Stress reduction in algaas-algaasp multilayer structures
JPS50159288A (nl) * 1974-06-11 1975-12-23
GB1482936A (en) * 1974-10-29 1977-08-17 Standard Telephones Cables Ltd Semiconductor lasers
GB1531238A (en) * 1975-01-09 1978-11-08 Standard Telephones Cables Ltd Injection lasers

Also Published As

Publication number Publication date
DE2710813C2 (nl) 1988-01-14
GB1556527A (en) 1979-11-28
NL178467C (nl) 1986-03-17
FR2506532A1 (fr) 1982-11-26
FR2506532B1 (nl) 1983-11-25
NL178467B (nl) 1985-10-16
US4105955A (en) 1978-08-08
JPS5641190B2 (nl) 1981-09-26
JPS52109884A (en) 1977-09-14
DE2710813A1 (de) 1977-09-22

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Legal Events

Date Code Title Description
BB A search report has been drawn up
BC A request for examination has been filed
A85 Still pending on 85-01-01
DNT Communications of changes of names of applicants whose applications have been laid open to public inspection

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V1 Lapsed because of non-payment of the annual fee