NL173218C - Inrichting voor het met een ionenstraal behandelen van substraten. - Google Patents

Inrichting voor het met een ionenstraal behandelen van substraten.

Info

Publication number
NL173218C
NL173218C NLAANVRAGE7700799,A NL7700799A NL173218C NL 173218 C NL173218 C NL 173218C NL 7700799 A NL7700799 A NL 7700799A NL 173218 C NL173218 C NL 173218C
Authority
NL
Netherlands
Prior art keywords
ion beam
treating substrates
substrates
treating
ion
Prior art date
Application number
NLAANVRAGE7700799,A
Other languages
English (en)
Dutch (nl)
Other versions
NL7700799A (nl
NL173218B (nl
Original Assignee
Balzers Hochvakuum
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Balzers Hochvakuum filed Critical Balzers Hochvakuum
Publication of NL7700799A publication Critical patent/NL7700799A/xx
Publication of NL173218B publication Critical patent/NL173218B/xx
Application granted granted Critical
Publication of NL173218C publication Critical patent/NL173218C/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
NLAANVRAGE7700799,A 1976-12-27 1977-01-26 Inrichting voor het met een ionenstraal behandelen van substraten. NL173218C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1634276A CH607836A5 (it) 1976-12-27 1976-12-27

Publications (3)

Publication Number Publication Date
NL7700799A NL7700799A (nl) 1977-07-29
NL173218B NL173218B (nl) 1983-07-18
NL173218C true NL173218C (nl) 1983-12-16

Family

ID=4416485

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7700799,A NL173218C (nl) 1976-12-27 1977-01-26 Inrichting voor het met een ionenstraal behandelen van substraten.

Country Status (6)

Country Link
US (1) US4155011A (it)
CH (1) CH607836A5 (it)
DE (1) DE2755852C2 (it)
FR (1) FR2375716A1 (it)
GB (1) GB1592589A (it)
NL (1) NL173218C (it)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2412939A1 (fr) * 1977-12-23 1979-07-20 Anvar Implanteur d'ions a fort courant
US4247781A (en) * 1979-06-29 1981-01-27 International Business Machines Corporation Cooled target disc for high current ion implantation method and apparatus
US4514636A (en) * 1979-09-14 1985-04-30 Eaton Corporation Ion treatment apparatus
US4261762A (en) * 1979-09-14 1981-04-14 Eaton Corporation Method for conducting heat to or from an article being treated under vacuum
US4909314A (en) * 1979-12-21 1990-03-20 Varian Associates, Inc. Apparatus for thermal treatment of a wafer in an evacuated environment
US4743570A (en) * 1979-12-21 1988-05-10 Varian Associates, Inc. Method of thermal treatment of a wafer in an evacuated environment
US4680061A (en) * 1979-12-21 1987-07-14 Varian Associates, Inc. Method of thermal treatment of a wafer in an evacuated environment
US4453080A (en) * 1981-07-20 1984-06-05 Varian Associates, Inc. Temperature control of a workpiece under ion implantation
US5389793A (en) * 1983-08-15 1995-02-14 Applied Materials, Inc. Apparatus and methods for ion implantation
GB8417040D0 (en) * 1984-07-04 1984-08-08 Salford University Of Modifying properties of material
GB8418063D0 (en) * 1984-07-16 1984-08-22 Atomic Energy Authority Uk Temperature control in vacuum
US4733091A (en) * 1984-09-19 1988-03-22 Applied Materials, Inc. Systems and methods for ion implantation of semiconductor wafers
US4672210A (en) * 1985-09-03 1987-06-09 Eaton Corporation Ion implanter target chamber
JPS63150848A (ja) * 1986-12-12 1988-06-23 Jeol Ltd 二次イオン質量分析装置用試料ホルダ
FR2660106B1 (fr) * 1990-03-23 1994-05-13 Commissariat A Energie Atomique Dispositif pour rendre homogene l'implantation d'ions sur la surface d'echantillons plans.
US7000418B2 (en) * 2004-05-14 2006-02-21 Intevac, Inc. Capacitance sensing for substrate cooling
US8378317B1 (en) 2011-09-07 2013-02-19 Gtat Corporation Ion implant apparatus and method of ion implantation
US8633458B2 (en) 2011-11-15 2014-01-21 Gtat Corporation Ion implant apparatus and a method of implanting ions

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT227797B (de) * 1961-04-13 1963-06-10 Hans Dipl Ing Dr Techn List Einrichtung zum Einstellen und Verändern der Raumlage von in einer Behandlungskammer zu behandelnden Gegenständen
GB1280013A (en) * 1969-09-05 1972-07-05 Atomic Energy Authority Uk Improvements in or relating to apparatus bombarding a target with ions
US3778626A (en) * 1972-07-28 1973-12-11 Western Electric Co Mechanical scan system for ion implantation
US3930163A (en) * 1974-03-22 1975-12-30 Varian Associates Ion beam apparatus with separately replaceable elements
US3920233A (en) * 1974-06-11 1975-11-18 Ibm Spherical support and translation device for wafers

Also Published As

Publication number Publication date
DE2755852A1 (de) 1978-06-29
NL7700799A (nl) 1977-07-29
US4155011A (en) 1979-05-15
CH607836A5 (it) 1978-11-15
NL173218B (nl) 1983-07-18
FR2375716B1 (it) 1983-07-01
FR2375716A1 (fr) 1978-07-21
GB1592589A (en) 1981-07-08
DE2755852C2 (de) 1983-05-11

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Legal Events

Date Code Title Description
DNT Communications of changes of names of applicants whose applications have been laid open to public inspection

Free format text: BALZERS AKTIENGESELLSCHAFT

BK Erratum

Free format text: IN PAT.BUL.24/83 OF 831216 PAGE 2549 JANUARI SHOULD BE MODIFIED INTO DECEMBER;CORRECTION TO PAMPHLET

V1 Lapsed because of non-payment of the annual fee