NL171644C - Inrichting voor het opslaan en overdragen van informatiesignalen. - Google Patents

Inrichting voor het opslaan en overdragen van informatiesignalen.

Info

Publication number
NL171644C
NL171644C NLAANVRAGE7101994,A NL7101994A NL171644C NL 171644 C NL171644 C NL 171644C NL 7101994 A NL7101994 A NL 7101994A NL 171644 C NL171644 C NL 171644C
Authority
NL
Netherlands
Prior art keywords
storing
transmission
information signals
signals
information
Prior art date
Application number
NLAANVRAGE7101994,A
Other languages
English (en)
Other versions
NL7101994A (nl
NL171644B (nl
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of NL7101994A publication Critical patent/NL7101994A/xx
Publication of NL171644B publication Critical patent/NL171644B/nl
Application granted granted Critical
Publication of NL171644C publication Critical patent/NL171644C/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/1055—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices of the so-called bucket brigade type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76808—Input structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • H01L29/76841—Two-Phase CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
NLAANVRAGE7101994,A 1970-02-16 1971-02-15 Inrichting voor het opslaan en overdragen van informatiesignalen. NL171644C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1144770A 1970-02-16 1970-02-16

Publications (3)

Publication Number Publication Date
NL7101994A NL7101994A (nl) 1971-08-18
NL171644B NL171644B (nl) 1982-11-16
NL171644C true NL171644C (nl) 1983-04-18

Family

ID=21750413

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7101994,A NL171644C (nl) 1970-02-16 1971-02-15 Inrichting voor het opslaan en overdragen van informatiesignalen.

Country Status (9)

Country Link
US (1) US3660697A (nl)
JP (1) JPS5024228B1 (nl)
BE (1) BE762944A (nl)
CA (1) CA918255A (nl)
DE (1) DE2107038B2 (nl)
FR (1) FR2080538B1 (nl)
GB (1) GB1340618A (nl)
NL (1) NL171644C (nl)
SE (1) SE386758B (nl)

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US3816769A (en) * 1969-12-17 1974-06-11 Integrated Photomatrix Ltd Method and circuit element for the selective charging of a semiconductor diffusion region
US3770988A (en) * 1970-09-04 1973-11-06 Gen Electric Self-registered surface charge launch-receive device and method for making
US3789240A (en) * 1970-10-26 1974-01-29 Rca Corp Bucket brigade scanning of sensor array
US4032948A (en) * 1970-10-28 1977-06-28 General Electric Company Surface charge launching apparatus
US3988773A (en) * 1970-10-28 1976-10-26 General Electric Company Self-registered surface charge receive and regeneration devices and methods
FR2123592A5 (nl) * 1971-01-14 1972-09-15 Commissariat Energie Atomique
US4646119A (en) * 1971-01-14 1987-02-24 Rca Corporation Charge coupled circuits
AU461729B2 (en) * 1971-01-14 1975-06-05 Rca Corporation Charge coupled circuits
NL176406C (nl) * 1971-10-27 1985-04-01 Philips Nv Ladingsgekoppelde halfgeleiderinrichting met een halfgeleiderlichaam bevattende een aan een oppervlak grenzende halfgeleiderlaag en middelen om informatie in de vorm van pakketten meerderheidsladingsdragers in te voeren in de halfgeleiderlaag.
US4013897A (en) * 1971-11-12 1977-03-22 Hitachi, Ltd. Information signal transfer method and a charge transfer
JPS5145453B2 (nl) * 1971-12-03 1976-12-03
US3927418A (en) * 1971-12-11 1975-12-16 Sony Corp Charge transfer device
US3811055A (en) * 1971-12-13 1974-05-14 Rca Corp Charge transfer fan-in circuitry
US3792465A (en) * 1971-12-30 1974-02-12 Texas Instruments Inc Charge transfer solid state display
US4032952A (en) * 1972-04-03 1977-06-28 Hitachi, Ltd. Bulk charge transfer semiconductor device
US3801826A (en) * 1972-05-12 1974-04-02 Teletype Corp Input for shift registers
GB1444541A (en) * 1972-09-22 1976-08-04 Mullard Ltd Radiation sensitive solid state devices
NL179426C (nl) * 1973-09-17 1986-09-01 Hitachi Ltd Ladingoverdrachtinrichting.
GB1442841A (en) * 1973-11-13 1976-07-14 Secr Defence Charge coupled devices
NL7316495A (nl) * 1973-12-03 1975-06-05 Philips Nv Halfgeleiderinrichting.
US4012758A (en) * 1973-12-03 1977-03-15 U.S. Philips Corporation Bulk channel charge transfer device with bias charge
US4047216A (en) * 1974-04-03 1977-09-06 Rockwell International Corporation High speed low capacitance charge coupled device in silicon-sapphire
US3935439A (en) * 1974-07-12 1976-01-27 Texas Instruments Incorporated Variable tap weight convolution filter
US4142198A (en) * 1976-07-06 1979-02-27 Hughes Aircraft Company Monolithic extrinsic silicon infrared detectors with an improved charge collection structure
US4197553A (en) * 1976-09-07 1980-04-08 Hughes Aircraft Company Monolithic extrinsic silicon infrared detector structure employing multi-epitaxial layers
US4213137A (en) * 1976-11-16 1980-07-15 Hughes Aircraft Company Monolithic variable size detector
US4233526A (en) * 1977-04-08 1980-11-11 Nippon Electric Co., Ltd. Semiconductor memory device having multi-gate transistors
DE2729656A1 (de) * 1977-06-30 1979-01-11 Siemens Ag Feldeffekttransistor mit extrem kurzer kanallaenge
US4158209A (en) * 1977-08-02 1979-06-12 Rca Corporation CCD comb filters
USRE31612E (en) * 1977-08-02 1984-06-26 Rca Corporation CCD Input circuits
US4139784A (en) * 1977-08-02 1979-02-13 Rca Corporation CCD Input circuits
US4364076A (en) * 1977-08-26 1982-12-14 Texas Instruments Incorporated Co-planar well-type charge coupled device with enhanced storage capacity and reduced leakage current
US4379306A (en) * 1977-08-26 1983-04-05 Texas Instruments Incorporated Non-coplanar barrier-type charge coupled device with enhanced storage capacity and reduced leakage current
DE2842856C3 (de) * 1978-10-02 1981-09-03 Siemens AG, 1000 Berlin und 8000 München Ladungsverschiebespeicher in Seriell-Parallel-Seriell-Organisation mit vollständigem Grundladungsbetrieb
US4240089A (en) * 1978-10-18 1980-12-16 General Electric Company Linearized charge transfer devices
US4247788A (en) * 1978-10-23 1981-01-27 Westinghouse Electric Corp. Charge transfer device with transistor input signal divider
JPS56125854A (en) * 1980-03-10 1981-10-02 Nec Corp Integrated circuit
IT8149780A0 (it) * 1980-12-01 1981-11-27 Hughes Aircraft Co Circuito d'ingresso a modulazionedi porta con resistori al silicio policristallino
US4482909A (en) * 1982-08-02 1984-11-13 Xerox Corporation Signal equalization in quadrilinear imaging CCD arrays
JPS61185973A (ja) * 1985-02-13 1986-08-19 Nec Corp 半導体装置
US4896340A (en) * 1985-11-01 1990-01-23 Hughes Aircraft Company Partial direct injection for signal processing system
US5973367A (en) * 1995-10-13 1999-10-26 Siliconix Incorporated Multiple gated MOSFET for use in DC-DC converter
US5616945A (en) * 1995-10-13 1997-04-01 Siliconix Incorporated Multiple gated MOSFET for use in DC-DC converter
US5721545A (en) * 1995-10-23 1998-02-24 Poplevine; Pavel B. Methods and apparatus for serial-to-parallel and parallel-to-serial conversion
US6461918B1 (en) 1999-12-20 2002-10-08 Fairchild Semiconductor Corporation Power MOS device with improved gate charge performance
US6696726B1 (en) * 2000-08-16 2004-02-24 Fairchild Semiconductor Corporation Vertical MOSFET with ultra-low resistance and low gate charge
US7745289B2 (en) 2000-08-16 2010-06-29 Fairchild Semiconductor Corporation Method of forming a FET having ultra-low on-resistance and low gate charge
US6818513B2 (en) * 2001-01-30 2004-11-16 Fairchild Semiconductor Corporation Method of forming a field effect transistor having a lateral depletion structure
US6803626B2 (en) * 2002-07-18 2004-10-12 Fairchild Semiconductor Corporation Vertical charge control semiconductor device
US6677641B2 (en) 2001-10-17 2004-01-13 Fairchild Semiconductor Corporation Semiconductor structure with improved smaller forward voltage loss and higher blocking capability
US7345342B2 (en) 2001-01-30 2008-03-18 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US6930473B2 (en) * 2001-08-23 2005-08-16 Fairchild Semiconductor Corporation Method and circuit for reducing losses in DC-DC converters
US7061066B2 (en) * 2001-10-17 2006-06-13 Fairchild Semiconductor Corporation Schottky diode using charge balance structure
KR100859701B1 (ko) 2002-02-23 2008-09-23 페어차일드코리아반도체 주식회사 고전압 수평형 디모스 트랜지스터 및 그 제조 방법
US7576388B1 (en) 2002-10-03 2009-08-18 Fairchild Semiconductor Corporation Trench-gate LDMOS structures
US7638841B2 (en) 2003-05-20 2009-12-29 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
KR100994719B1 (ko) * 2003-11-28 2010-11-16 페어차일드코리아반도체 주식회사 슈퍼정션 반도체장치
US7368777B2 (en) 2003-12-30 2008-05-06 Fairchild Semiconductor Corporation Accumulation device with charge balance structure and method of forming the same
US7352036B2 (en) 2004-08-03 2008-04-01 Fairchild Semiconductor Corporation Semiconductor power device having a top-side drain using a sinker trench
US7199409B2 (en) * 2004-08-26 2007-04-03 Massachusetts Institute Of Technology Device for subtracting or adding charge in a charge-coupled device
US7265415B2 (en) 2004-10-08 2007-09-04 Fairchild Semiconductor Corporation MOS-gated transistor with reduced miller capacitance
US7952633B2 (en) * 2004-11-18 2011-05-31 Kla-Tencor Technologies Corporation Apparatus for continuous clocking of TDI sensors
WO2006108011A2 (en) 2005-04-06 2006-10-12 Fairchild Semiconductor Corporation Trenched-gate field effect transistors and methods of forming the same
US7385248B2 (en) 2005-08-09 2008-06-10 Fairchild Semiconductor Corporation Shielded gate field effect transistor with improved inter-poly dielectric
US7446374B2 (en) * 2006-03-24 2008-11-04 Fairchild Semiconductor Corporation High density trench FET with integrated Schottky diode and method of manufacture
US7319256B1 (en) * 2006-06-19 2008-01-15 Fairchild Semiconductor Corporation Shielded gate trench FET with the shield and gate electrodes being connected together
US8222874B2 (en) * 2007-06-26 2012-07-17 Vishay-Siliconix Current mode boost converter using slope compensation
WO2009039441A1 (en) 2007-09-21 2009-03-26 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US7772668B2 (en) 2007-12-26 2010-08-10 Fairchild Semiconductor Corporation Shielded gate trench FET with multiple channels
US20120273916A1 (en) 2011-04-27 2012-11-01 Yedinak Joseph A Superjunction Structures for Power Devices and Methods of Manufacture
US8174067B2 (en) 2008-12-08 2012-05-08 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
US8183892B2 (en) 2009-06-05 2012-05-22 Fairchild Semiconductor Corporation Monolithic low impedance dual gate current sense MOSFET
US8319290B2 (en) 2010-06-18 2012-11-27 Fairchild Semiconductor Corporation Trench MOS barrier schottky rectifier with a planar surface using CMP techniques
US8786010B2 (en) 2011-04-27 2014-07-22 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8836028B2 (en) 2011-04-27 2014-09-16 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8673700B2 (en) 2011-04-27 2014-03-18 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8772868B2 (en) 2011-04-27 2014-07-08 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture

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US3390273A (en) * 1966-08-08 1968-06-25 Fairchild Camera Instr Co Electronic shutter with gating and storage features
NL174503C (nl) * 1968-04-23 1984-06-18 Philips Nv Inrichting voor het overhevelen van lading.

Also Published As

Publication number Publication date
DE2107038A1 (de) 1971-09-16
FR2080538A1 (nl) 1971-11-19
NL7101994A (nl) 1971-08-18
DE2107038B2 (de) 1975-03-06
BE762944A (fr) 1971-07-16
CA918255A (en) 1973-01-02
GB1340618A (en) 1973-12-12
US3660697A (en) 1972-05-02
SE386758B (sv) 1976-08-16
FR2080538B1 (nl) 1973-12-07
NL171644B (nl) 1982-11-16
JPS5024228B1 (nl) 1975-08-14

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Legal Events

Date Code Title Description
V4 Lapsed because of reaching the maximum lifetime of a patent