NL164414C - Progammeerbaar halfgeleidergeheugenelement voorzien van een uit dielektrische lagen samengestelde laag, waarin een met een informatiesignaal overeenkomende hoeveelheid ladingsdragers wordt opgeslagen. - Google Patents

Progammeerbaar halfgeleidergeheugenelement voorzien van een uit dielektrische lagen samengestelde laag, waarin een met een informatiesignaal overeenkomende hoeveelheid ladingsdragers wordt opgeslagen.

Info

Publication number
NL164414C
NL164414C NL6915528.A NL6915528A NL164414C NL 164414 C NL164414 C NL 164414C NL 6915528 A NL6915528 A NL 6915528A NL 164414 C NL164414 C NL 164414C
Authority
NL
Netherlands
Prior art keywords
semiconductor memory
amount
memory element
information signal
element provided
Prior art date
Application number
NL6915528.A
Other languages
English (en)
Dutch (nl)
Other versions
NL6915528A (xx
Original Assignee
Sperry Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sperry Corp filed Critical Sperry Corp
Publication of NL6915528A publication Critical patent/NL6915528A/xx
Application granted granted Critical
Publication of NL164414C publication Critical patent/NL164414C/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
NL6915528.A 1968-10-14 1969-10-14 Progammeerbaar halfgeleidergeheugenelement voorzien van een uit dielektrische lagen samengestelde laag, waarin een met een informatiesignaal overeenkomende hoeveelheid ladingsdragers wordt opgeslagen. NL164414C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US76723068A 1968-10-14 1968-10-14

Publications (2)

Publication Number Publication Date
NL6915528A NL6915528A (xx) 1970-04-16
NL164414C true NL164414C (nl) 1980-12-15

Family

ID=25078877

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6915528.A NL164414C (nl) 1968-10-14 1969-10-14 Progammeerbaar halfgeleidergeheugenelement voorzien van een uit dielektrische lagen samengestelde laag, waarin een met een informatiesignaal overeenkomende hoeveelheid ladingsdragers wordt opgeslagen.

Country Status (6)

Country Link
US (1) US3590337A (xx)
JP (1) JPS4834330B1 (xx)
DE (1) DE1951787C3 (xx)
FR (1) FR2020631A1 (xx)
GB (1) GB1280519A (xx)
NL (1) NL164414C (xx)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3624618A (en) * 1967-12-14 1971-11-30 Sperry Rand Corp A high-speed memory array using variable threshold transistors
US3691535A (en) * 1970-06-15 1972-09-12 Sperry Rand Corp Solid state memory array
DE2125681C2 (de) * 1971-05-24 1982-05-13 Sperry Corp., 10104 New York, N.Y. Speicher mit Transistoren mit veränderlichem Leitfähigkeitsschwellenwert
JPS5647705B2 (xx) * 1972-03-11 1981-11-11
US3824564A (en) * 1973-07-19 1974-07-16 Sperry Rand Corp Integrated threshold mnos memory with decoder and operating sequence
US3971001A (en) * 1974-06-10 1976-07-20 Sperry Rand Corporation Reprogrammable read only variable threshold transistor memory with isolated addressing buffer
US4094008A (en) * 1976-06-18 1978-06-06 Ncr Corporation Alterable capacitor memory array
US4384299A (en) * 1976-10-29 1983-05-17 Massachusetts Institute Of Technology Capacitor memory and methods for reading, writing, and fabricating capacitor memories
US4127900A (en) * 1976-10-29 1978-11-28 Massachusetts Institute Of Technology Reading capacitor memories with a variable voltage ramp
GB2000407B (en) * 1977-06-27 1982-01-27 Hughes Aircraft Co Volatile/non-volatile logic latch circuit
EP0118506A1 (en) * 1982-08-12 1984-09-19 Ncr Corporation Non-volatile semiconductor memory device
US5723375A (en) * 1996-04-26 1998-03-03 Micron Technology, Inc. Method of making EEPROM transistor for a DRAM
US5969382A (en) 1997-11-03 1999-10-19 Delco Electronics Corporation EPROM in high density CMOS having added substrate diffusion
US5972804A (en) * 1997-08-05 1999-10-26 Motorola, Inc. Process for forming a semiconductor device
US6452856B1 (en) * 1999-02-26 2002-09-17 Micron Technology, Inc. DRAM technology compatible processor/memory chips
DE10224956A1 (de) * 2002-06-05 2004-01-08 Infineon Technologies Ag Verfahren zur Einstellung der Einsatzspannung eines Feldeffekttansistors, Feldeffekttransistor sowie integrierte Schaltung
DE102004006676A1 (de) * 2004-02-11 2005-05-04 Infineon Technologies Ag Dynamische Speicherzelle
US8941171B2 (en) 2010-07-02 2015-01-27 Micron Technology, Inc. Flatband voltage adjustment in a semiconductor device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL97896C (xx) * 1955-02-18
NL298671A (xx) * 1963-10-01
US3597667A (en) * 1966-03-01 1971-08-03 Gen Electric Silicon oxide-silicon nitride coatings for semiconductor devices
US3422321A (en) * 1966-06-20 1969-01-14 Sperry Rand Corp Oxygenated silicon nitride semiconductor devices and silane method for making same
FR1530106A (fr) * 1966-08-12 1968-06-21 Ibm Dispositifs semi-conducteurs perfectionnés et procédés de fabrication appropriés
CA924969A (en) * 1966-09-30 1973-04-24 Arthur R. Baker, Jr. Method for depositing insulating films
US3428875A (en) * 1966-10-03 1969-02-18 Fairchild Camera Instr Co Variable threshold insulated gate field effect device
US3455020A (en) * 1966-10-13 1969-07-15 Rca Corp Method of fabricating insulated-gate field-effect devices
GB1227851A (xx) * 1967-02-16 1971-04-07
DE1614455C3 (de) * 1967-03-16 1979-07-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen einer teils aus Siliciumoxid, teils aus Siliciumnitrid bestehenden Schutzschicht an der Oberfläche eines Halbleiterkörpers
US3462657A (en) * 1968-03-07 1969-08-19 Gen Electric Protection means for surface semiconductor devices having thin oxide films therein
EP1128168A3 (en) * 2000-02-23 2002-07-03 Hitachi, Ltd. Measurement apparatus for measuring physical quantity such as fluid flow

Also Published As

Publication number Publication date
DE1951787C3 (de) 1988-12-01
GB1280519A (en) 1972-07-05
NL6915528A (xx) 1970-04-16
FR2020631A1 (xx) 1970-07-17
DE1951787B2 (de) 1981-07-16
JPS4834330B1 (xx) 1973-10-20
DE1951787A1 (de) 1970-04-30
US3590337A (en) 1971-06-29

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Legal Events

Date Code Title Description
DNT Communications of changes of names of applicants whose applications have been laid open to public inspection

Free format text: SPERRY CORPORATION

V4 Discontinued because of reaching the maximum lifetime of a patent