DE2439986B2 - Halbleiterfestwertspeicher - Google Patents

Halbleiterfestwertspeicher

Info

Publication number
DE2439986B2
DE2439986B2 DE19742439986 DE2439986A DE2439986B2 DE 2439986 B2 DE2439986 B2 DE 2439986B2 DE 19742439986 DE19742439986 DE 19742439986 DE 2439986 A DE2439986 A DE 2439986A DE 2439986 B2 DE2439986 B2 DE 2439986B2
Authority
DE
Germany
Prior art keywords
semi
solid storage
conductor solid
conductor
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19742439986
Other languages
English (en)
Other versions
DE2439986C3 (de
DE2439986A1 (de
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of DE2439986A1 publication Critical patent/DE2439986A1/de
Publication of DE2439986B2 publication Critical patent/DE2439986B2/de
Application granted granted Critical
Publication of DE2439986C3 publication Critical patent/DE2439986C3/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
DE2439986A 1973-08-23 1974-08-21 Halbleiterfestwertspeicher Expired DE2439986C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US39142573A 1973-08-23 1973-08-23

Publications (3)

Publication Number Publication Date
DE2439986A1 DE2439986A1 (de) 1975-07-10
DE2439986B2 true DE2439986B2 (de) 1976-05-06
DE2439986C3 DE2439986C3 (de) 1982-04-15

Family

ID=23546533

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2439986A Expired DE2439986C3 (de) 1973-08-23 1974-08-21 Halbleiterfestwertspeicher

Country Status (10)

Country Link
JP (1) JPS5710513B2 (de)
BE (1) BE819134A (de)
CA (1) CA1042550A (de)
CH (1) CH565429A5 (de)
DE (1) DE2439986C3 (de)
FR (1) FR2241845B1 (de)
GB (1) GB1456608A (de)
IT (1) IT1015218B (de)
NL (1) NL7409643A (de)
SE (1) SE400846B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2855744A1 (de) * 1978-12-22 1980-07-17 Siemens Ag Mos-integrierte schaltungsanordnung zur unterdrueckung von in wortleitungstreibern von halbleiterspeichern fliessenden ruhestroemen

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4025908A (en) * 1975-06-24 1977-05-24 International Business Machines Corporation Dynamic array with clamped bootstrap static input/output circuitry
JPS5341968A (en) * 1976-09-29 1978-04-15 Hitachi Ltd Semiconductor circuit
US4151603A (en) * 1977-10-31 1979-04-24 International Business Machines Corporation Precharged FET ROS array

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3614750A (en) * 1969-07-15 1971-10-19 Ncr Co Read-only memory circuit
DE2128014A1 (de) * 1971-06-05 1972-12-14 Ibm Deutschland Halbleiterfestwertspeicher

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2855744A1 (de) * 1978-12-22 1980-07-17 Siemens Ag Mos-integrierte schaltungsanordnung zur unterdrueckung von in wortleitungstreibern von halbleiterspeichern fliessenden ruhestroemen

Also Published As

Publication number Publication date
BE819134A (fr) 1974-12-16
DE2439986C3 (de) 1982-04-15
IT1015218B (it) 1977-05-10
JPS5710513B2 (de) 1982-02-26
NL7409643A (nl) 1975-02-25
GB1456608A (en) 1976-11-24
AU7126074A (en) 1976-01-22
FR2241845A1 (de) 1975-03-21
SE7410608L (de) 1975-02-24
CH565429A5 (de) 1975-08-15
FR2241845B1 (de) 1976-06-25
SE400846B (sv) 1978-04-10
DE2439986A1 (de) 1975-07-10
CA1042550A (en) 1978-11-14
JPS5074348A (de) 1975-06-19

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee