NL153723B - Veldeffecttransistor voorzien van een geisoleerde stuurelektrode. - Google Patents

Veldeffecttransistor voorzien van een geisoleerde stuurelektrode.

Info

Publication number
NL153723B
NL153723B NL717107901A NL7107901A NL153723B NL 153723 B NL153723 B NL 153723B NL 717107901 A NL717107901 A NL 717107901A NL 7107901 A NL7107901 A NL 7107901A NL 153723 B NL153723 B NL 153723B
Authority
NL
Netherlands
Prior art keywords
field effect
effect transistor
control electrode
insulated control
transistor equipped
Prior art date
Application number
NL717107901A
Other languages
English (en)
Dutch (nl)
Other versions
NL7107901A (de
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of NL7107901A publication Critical patent/NL7107901A/xx
Publication of NL153723B publication Critical patent/NL153723B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
NL717107901A 1970-06-10 1971-06-09 Veldeffecttransistor voorzien van een geisoleerde stuurelektrode. NL153723B (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP45049444A JPS4936515B1 (de) 1970-06-10 1970-06-10

Publications (2)

Publication Number Publication Date
NL7107901A NL7107901A (de) 1971-12-14
NL153723B true NL153723B (nl) 1977-06-15

Family

ID=12831280

Family Applications (1)

Application Number Title Priority Date Filing Date
NL717107901A NL153723B (nl) 1970-06-10 1971-06-09 Veldeffecttransistor voorzien van een geisoleerde stuurelektrode.

Country Status (4)

Country Link
US (1) US3719864A (de)
JP (1) JPS4936515B1 (de)
DE (1) DE2128536C3 (de)
NL (1) NL153723B (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3831187A (en) * 1973-04-11 1974-08-20 Rca Corp Thyristor having capacitively coupled control electrode
NL7606483A (nl) * 1976-06-16 1977-12-20 Philips Nv Inrichting voor het mengen van signalen.
JPS5725287U (de) * 1980-07-21 1982-02-09
GB2154820B (en) * 1984-01-23 1988-05-25 Int Rectifier Corp Photovoltaic relay
US4721986A (en) * 1984-02-21 1988-01-26 International Rectifier Corporation Bidirectional output semiconductor field effect transistor and method for its maufacture
JP2503900B2 (ja) * 1993-07-30 1996-06-05 日本電気株式会社 半導体装置及びそれを用いたモ―タドライバ回路
DE69616013T2 (de) * 1995-07-19 2002-06-06 Koninklijke Philips Electronics N.V., Eindhoven Halbleiteranordnung vom hochspannungs-ldmos-typ

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE643857A (de) * 1963-02-14
US3264493A (en) * 1963-10-01 1966-08-02 Fairchild Camera Instr Co Semiconductor circuit module for a high-gain, high-input impedance amplifier
US3295030A (en) * 1963-12-18 1966-12-27 Signetics Corp Field effect transistor and method
US3305708A (en) * 1964-11-25 1967-02-21 Rca Corp Insulated-gate field-effect semiconductor device
US3461360A (en) * 1965-06-30 1969-08-12 Ibm Semiconductor devices with cup-shaped regions
FR1522584A (fr) * 1966-03-28 1968-04-26 Matsushita Electronics Corp Transistor à effet de champ à électrodes de commande isolées
FR1546644A (fr) * 1966-09-19 1968-11-22 Matsushita Electronics Corp Dispositif semi-conducteur
US3440500A (en) * 1966-09-26 1969-04-22 Itt High frequency field effect transistor
FR1530926A (fr) * 1966-10-13 1968-06-28 Rca Corp Procédé pour la fabrication de dispositifs à effet de champ à électrodes de commande isolées
FR1540755A (fr) * 1966-10-13 1968-09-27 Rca Corp Transistor tétrode à effet de champ
GB1173150A (en) * 1966-12-13 1969-12-03 Associated Semiconductor Mft Improvements in Insulated Gate Field Effect Transistors
FR1534511A (fr) * 1966-12-20 1968-07-26 Texas Instruments Inc Triode semiconductrice du type métal-oxyde
FR1563879A (de) * 1968-02-09 1969-04-18
GB1171874A (en) * 1968-04-26 1969-11-26 Hughes Aircraft Co Field Effect Transistor.
NL6906840A (de) * 1968-07-12 1970-01-14

Also Published As

Publication number Publication date
DE2128536C3 (de) 1986-07-10
DE2128536A1 (de) 1971-12-16
JPS4936515B1 (de) 1974-10-01
NL7107901A (de) 1971-12-14
DE2128536B2 (de) 1980-09-25
US3719864A (en) 1973-03-06

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee
NL80 Information provided on patent owner name for an already discontinued patent

Owner name: HITACHI