FR1563879A - - Google Patents

Info

Publication number
FR1563879A
FR1563879A FR1563879DA FR1563879A FR 1563879 A FR1563879 A FR 1563879A FR 1563879D A FR1563879D A FR 1563879DA FR 1563879 A FR1563879 A FR 1563879A
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Application granted granted Critical
Publication of FR1563879A publication Critical patent/FR1563879A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
FR1563879D 1968-02-09 1968-02-09 Expired FR1563879A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR139375 1968-02-09

Publications (1)

Publication Number Publication Date
FR1563879A true FR1563879A (de) 1969-04-18

Family

ID=8645800

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1563879D Expired FR1563879A (de) 1968-02-09 1968-02-09

Country Status (4)

Country Link
DE (1) DE1906324C3 (de)
FR (1) FR1563879A (de)
GB (1) GB1223543A (de)
NL (1) NL6901879A (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2128536A1 (de) * 1970-06-10 1971-12-16 Hitachi Ltd Halbleiterbauelement mit zwei MOS-Transistoren vom nicht-symmetrischen Typ
FR2158385A1 (de) * 1971-11-03 1973-06-15 Siemens Ag

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3995304A (en) * 1972-01-10 1976-11-30 Teledyne, Inc. D/A bit switch
US4599634A (en) * 1978-08-15 1986-07-08 National Semiconductor Corporation Stress insensitive integrated circuit
US4455566A (en) * 1979-06-18 1984-06-19 Fujitsu Limited Highly integrated semiconductor memory device
JPS5688350A (en) * 1979-12-19 1981-07-17 Toshiba Corp Semiconductor device
JPH0642537B2 (ja) * 1985-11-15 1994-06-01 株式会社東芝 半導体装置
DE3818533C2 (de) * 1987-06-01 1994-05-26 Mitsubishi Electric Corp Feldeffekttransistor
US5040035A (en) * 1989-12-22 1991-08-13 At&T Bell Laboratories MOS devices having improved threshold match

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE632998A (de) * 1962-05-31
GB1054513A (de) * 1963-03-21 1900-01-01
GB1054514A (de) * 1963-04-05 1900-01-01

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2128536A1 (de) * 1970-06-10 1971-12-16 Hitachi Ltd Halbleiterbauelement mit zwei MOS-Transistoren vom nicht-symmetrischen Typ
FR2158385A1 (de) * 1971-11-03 1973-06-15 Siemens Ag

Also Published As

Publication number Publication date
DE1906324B2 (de) 1979-11-29
NL6901879A (de) 1969-08-12
DE1906324C3 (de) 1983-12-29
DE1906324A1 (de) 1969-09-04
GB1223543A (en) 1971-02-24

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