NL152122B - Halfgeleiderinrichting met een schottky-overgang. - Google Patents

Halfgeleiderinrichting met een schottky-overgang.

Info

Publication number
NL152122B
NL152122B NL696905217A NL6905217A NL152122B NL 152122 B NL152122 B NL 152122B NL 696905217 A NL696905217 A NL 696905217A NL 6905217 A NL6905217 A NL 6905217A NL 152122 B NL152122 B NL 152122B
Authority
NL
Netherlands
Prior art keywords
semi
conductor device
schottky transition
schottky
transition
Prior art date
Application number
NL696905217A
Other languages
English (en)
Dutch (nl)
Other versions
NL6905217A (Direct
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Publication of NL6905217A publication Critical patent/NL6905217A/xx
Publication of NL152122B publication Critical patent/NL152122B/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
    • B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50—Alloying conductive materials with semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H10W72/07554—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in dispositions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/05—Etch and refill
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/139—Schottky barrier

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Oral & Maxillofacial Surgery (AREA)
  • Thermal Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
NL696905217A 1968-04-05 1969-04-03 Halfgeleiderinrichting met een schottky-overgang. NL152122B (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2301568 1968-04-05

Publications (2)

Publication Number Publication Date
NL6905217A NL6905217A (Direct) 1969-10-07
NL152122B true NL152122B (nl) 1977-01-17

Family

ID=12098649

Family Applications (1)

Application Number Title Priority Date Filing Date
NL696905217A NL152122B (nl) 1968-04-05 1969-04-03 Halfgeleiderinrichting met een schottky-overgang.

Country Status (5)

Country Link
US (1) US3636417A (Direct)
DE (1) DE1917058B2 (Direct)
FR (1) FR2007393B1 (Direct)
GB (1) GB1207093A (Direct)
NL (1) NL152122B (Direct)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3935586A (en) * 1972-06-29 1976-01-27 U.S. Philips Corporation Semiconductor device having a Schottky junction and method of manufacturing same
US3878552A (en) * 1972-11-13 1975-04-15 Thurman J Rodgers Bipolar integrated circuit and method
US3932880A (en) * 1974-11-26 1976-01-13 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with Schottky barrier
JPS5850428B2 (ja) * 1975-04-16 1983-11-10 株式会社東芝 メサ型半導体装置
JPS5254369A (en) * 1975-10-29 1977-05-02 Mitsubishi Electric Corp Schottky barrier semiconductor device
JPS5267961A (en) * 1975-12-03 1977-06-06 Mitsubishi Electric Corp Electrode formation of semiconductor unit
US4307131A (en) * 1976-01-30 1981-12-22 Thomson-Csf Method of manufacturing metal-semiconductor contacts exhibiting high injected current density
US4201998A (en) * 1977-02-18 1980-05-06 Bell Telephone Laboratories, Incorporated Devices with Schottky metal contacts filling a depression in a semi-conductor body
US4108738A (en) * 1977-02-18 1978-08-22 Bell Telephone Laboratories, Incorporated Method for forming contacts to semiconductor devices
US4543442A (en) * 1983-06-24 1985-09-24 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration GaAs Schottky barrier photo-responsive device and method of fabrication
US4782302A (en) * 1986-10-31 1988-11-01 The United States Of America As Represented By The United States Department Of Energy Detector and energy analyzer for energetic-hydrogen in beams and plasmas
JP3180776B2 (ja) * 1998-09-22 2001-06-25 日本電気株式会社 電界効果型トランジスタ
DE102015101966B4 (de) * 2015-02-11 2021-07-08 Infineon Technologies Austria Ag Verfahren zum Herstellen eines Halbleiterbauelements mit Schottkykontakt und Halbleiterbauelement

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3290127A (en) * 1964-03-30 1966-12-06 Bell Telephone Labor Inc Barrier diode with metal contact and method of making
GB1139495A (en) * 1966-08-17 1969-01-08 Ass Elect Ind Schottky barrier semi-conductor devices

Also Published As

Publication number Publication date
FR2007393B1 (Direct) 1973-10-19
US3636417A (en) 1972-01-18
DE1917058B2 (de) 1976-11-18
NL6905217A (Direct) 1969-10-07
DE1917058A1 (de) 1969-10-23
GB1207093A (en) 1970-09-30
FR2007393A1 (Direct) 1970-01-09

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Legal Events

Date Code Title Description
NL80 Information provided on patent owner name for an already discontinued patent

Owner name: MATSUSHITA

V4 Discontinued because of reaching the maximum lifetime of a patent