NL131156C - - Google Patents

Info

Publication number
NL131156C
NL131156C NL131156DA NL131156C NL 131156 C NL131156 C NL 131156C NL 131156D A NL131156D A NL 131156DA NL 131156 C NL131156 C NL 131156C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Family has litigation
Publication of NL131156C publication Critical patent/NL131156C/xx
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25263235&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=NL131156(C) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H10W72/07554—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt
NL131156D 1959-08-11 NL131156C (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US833031A US2972092A (en) 1959-08-11 1959-08-11 Semiconductor devices

Publications (1)

Publication Number Publication Date
NL131156C true NL131156C (OSRAM)

Family

ID=25263235

Family Applications (2)

Application Number Title Priority Date Filing Date
NL254726D NL254726A (OSRAM) 1959-08-11
NL131156D NL131156C (OSRAM) 1959-08-11

Family Applications Before (1)

Application Number Title Priority Date Filing Date
NL254726D NL254726A (OSRAM) 1959-08-11

Country Status (5)

Country Link
US (1) US2972092A (OSRAM)
DE (1) DE1151323B (OSRAM)
FR (1) FR1262976A (OSRAM)
GB (1) GB963256A (OSRAM)
NL (2) NL131156C (OSRAM)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL231410A (OSRAM) * 1958-09-16
GB914832A (en) * 1959-12-11 1963-01-09 Gen Electric Improvements in semiconductor devices and method of fabricating the same
US3196325A (en) * 1960-02-16 1965-07-20 Microwave Ass Electrode connection to mesa type semiconductor device
US3160534A (en) * 1960-10-03 1964-12-08 Gen Telephone & Elect Method of making tunnel diodes
NL125803C (OSRAM) * 1961-01-16
US3065391A (en) * 1961-01-23 1962-11-20 Gen Electric Semiconductor devices
DE1180067C2 (de) * 1961-03-17 1970-03-12 Elektronik M B H Verfahren zum gleichzeitigen Kontaktieren mehrerer Halbleiteranordnungen
US3249829A (en) * 1962-05-18 1966-05-03 Transitron Electronic Corp Encapsulated diode assembly
US3296040A (en) * 1962-08-17 1967-01-03 Fairchild Camera Instr Co Epitaxially growing layers of semiconductor through openings in oxide mask
US3357090A (en) * 1963-05-23 1967-12-12 Transitron Electronic Corp Vibratory welding tip and method of welding
GB1053069A (OSRAM) * 1963-06-28
GB1070288A (en) * 1963-07-08 1967-06-01 Rca Corp Semiconductor devices
DE1250004B (OSRAM) * 1963-08-19
US3289053A (en) * 1963-12-26 1966-11-29 Ibm Thin film transistor
US3331995A (en) * 1964-02-25 1967-07-18 Hughes Aircraft Co Housed semiconductor device with thermally matched elements
US3331125A (en) * 1964-05-28 1967-07-18 Rca Corp Semiconductor device fabrication
DE1564530B1 (de) * 1965-06-09 1971-05-06 Rca Corp Verfahren zur herstellung von gleichrichtersaeulen
US3424954A (en) * 1966-09-21 1969-01-28 Bell Telephone Labor Inc Silicon oxide tunnel diode structure and method of making same
US3350293A (en) * 1966-11-14 1967-10-31 Components Inc Passivating silicon semiconductor devices with sputtered tungsten oxide at low temperatures
US3534234A (en) * 1966-12-15 1970-10-13 Texas Instruments Inc Modified planar process for making semiconductor devices having ultrafine mesa type geometry
US3496428A (en) * 1968-04-11 1970-02-17 Itt Diffusion barrier for semiconductor contacts
US3670218A (en) * 1971-08-02 1972-06-13 North American Rockwell Monolithic heteroepitaxial microwave tunnel die

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL153395B (nl) * 1949-02-10 Contraves Ag Verbetering van een bistabiele trekkerschakeling.
US2680220A (en) * 1950-06-09 1954-06-01 Int Standard Electric Corp Crystal diode and triode
FR1075030A (fr) * 1953-02-25 1954-10-12 Csf Perfectionnements aux redresseurs à semi-conducteurs
US2781480A (en) * 1953-07-31 1957-02-12 Rca Corp Semiconductor rectifiers
DE1078194B (de) * 1957-09-27 1960-03-24 Siemens Ag Elektrisches Bauelement mit dicht nebeneinanderliegenden Kontaktanschluessen
US2890395A (en) * 1957-10-31 1959-06-09 Jay W Lathrop Semiconductor construction
US2911539A (en) * 1957-12-18 1959-11-03 Bell Telephone Labor Inc Photocell array
DE1805708U (de) * 1959-05-21 1960-02-11 Telefunken Gmbh Halbleiteranordnung.

Also Published As

Publication number Publication date
DE1151323B (de) 1963-07-11
FR1262976A (fr) 1961-06-05
GB963256A (en) 1964-07-08
US2972092A (en) 1961-02-14
NL254726A (OSRAM)

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