NL127213C - - Google Patents

Info

Publication number
NL127213C
NL127213C NL127213DA NL127213C NL 127213 C NL127213 C NL 127213C NL 127213D A NL127213D A NL 127213DA NL 127213 C NL127213 C NL 127213C
Authority
NL
Netherlands
Prior art keywords
layer
semi
silicon
conductor
type
Prior art date
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL127213C publication Critical patent/NL127213C/xx

Links

Classifications

    • H10P95/00—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P10/12—
    • H10P14/24—
    • H10P14/2905—
    • H10P14/3411—
    • H10P14/3442—
    • H10P14/3444—
    • H10P14/3602—
    • H10W72/5363—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Bipolar Transistors (AREA)
NL127213D 1960-06-10 NL127213C (index.php)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US35152A US3165811A (en) 1960-06-10 1960-06-10 Process of epitaxial vapor deposition with subsequent diffusion into the epitaxial layer

Publications (1)

Publication Number Publication Date
NL127213C true NL127213C (index.php)

Family

ID=21880976

Family Applications (2)

Application Number Title Priority Date Filing Date
NL258408D NL258408A (index.php) 1960-06-10
NL127213D NL127213C (index.php) 1960-06-10

Family Applications Before (1)

Application Number Title Priority Date Filing Date
NL258408D NL258408A (index.php) 1960-06-10

Country Status (6)

Country Link
US (1) US3165811A (index.php)
BE (1) BE595672A (index.php)
CH (1) CH393543A (index.php)
DE (1) DE1163981B (index.php)
GB (1) GB972511A (index.php)
NL (2) NL127213C (index.php)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL121135C (index.php) * 1960-01-29
BE623677A (index.php) * 1961-10-20
BE636317A (index.php) * 1962-08-23 1900-01-01
NL297821A (index.php) * 1962-10-08
US3319138A (en) * 1962-11-27 1967-05-09 Texas Instruments Inc Fast switching high current avalanche transistor
US3299330A (en) * 1963-02-07 1967-01-17 Nippon Electric Co Intermetallic compound semiconductor devices
US3328214A (en) * 1963-04-22 1967-06-27 Siliconix Inc Process for manufacturing horizontal transistor structure
US3316131A (en) * 1963-08-15 1967-04-25 Texas Instruments Inc Method of producing a field-effect transistor
US3290539A (en) * 1963-09-16 1966-12-06 Rca Corp Planar p-nu junction light source with reflector means to collimate the emitted light
US3345222A (en) * 1963-09-28 1967-10-03 Hitachi Ltd Method of forming a semiconductor device by etching and epitaxial deposition
US3372069A (en) * 1963-10-22 1968-03-05 Texas Instruments Inc Method for depositing a single crystal on an amorphous film, method for manufacturing a metal base transistor, and a thin-film, metal base transistor
US3343114A (en) * 1963-12-30 1967-09-19 Texas Instruments Inc Temperature transducer
US3327181A (en) * 1964-03-24 1967-06-20 Crystalonics Inc Epitaxial transistor and method of manufacture
US3335038A (en) 1964-03-30 1967-08-08 Ibm Methods of producing single crystals on polycrystalline substrates and devices using same
US3371213A (en) * 1964-06-26 1968-02-27 Texas Instruments Inc Epitaxially immersed lens and photodetectors and methods of making same
US3341375A (en) * 1964-07-08 1967-09-12 Ibm Fabrication technique
US3436549A (en) * 1964-11-06 1969-04-01 Texas Instruments Inc P-n photocell epitaxially deposited on transparent substrate and method for making same
US3332143A (en) * 1964-12-28 1967-07-25 Gen Electric Semiconductor devices with epitaxial contour
US3421057A (en) * 1965-08-23 1969-01-07 Ibm High speed switching transistor and fabrication method therefor
US3448349A (en) * 1965-12-06 1969-06-03 Texas Instruments Inc Microcontact schottky barrier semiconductor device
DE1514654C2 (de) * 1965-12-29 1982-11-25 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen einer Halbleiterdiode
US3484311A (en) * 1966-06-21 1969-12-16 Union Carbide Corp Silicon deposition process
US3531857A (en) * 1967-07-26 1970-10-06 Hitachi Ltd Method of manufacturing substrate for semiconductor integrated circuit

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE883784C (de) * 1949-04-06 1953-06-03 Sueddeutsche App Fabrik G M B Verfahren zur Herstellung von Flaechengleichrichtern und Kristallverstaerkerschichten aus Elementen
US2561411A (en) * 1950-03-08 1951-07-24 Bell Telephone Labor Inc Semiconductor signal translating device
NL99536C (index.php) * 1951-03-07 1900-01-01
US2811653A (en) * 1953-05-22 1957-10-29 Rca Corp Semiconductor devices
BE547274A (index.php) * 1955-06-20
US2898248A (en) * 1957-05-15 1959-08-04 Ibm Method of fabricating germanium bodies
FR1193194A (fr) * 1958-03-12 1959-10-30 Perfectionnements aux procédés de fabrication par diffusion des transistors et des redresseurs à jonctions
US2967793A (en) * 1959-02-24 1961-01-10 Westinghouse Electric Corp Semiconductor devices with bi-polar injection characteristics
NL125412C (index.php) * 1959-04-15
US2981877A (en) * 1959-07-30 1961-04-25 Fairchild Semiconductor Semiconductor device-and-lead structure
US3028529A (en) * 1959-08-26 1962-04-03 Bendix Corp Semiconductor diode
US3100276A (en) * 1960-04-18 1963-08-06 Owen L Meyer Semiconductor solid circuits

Also Published As

Publication number Publication date
GB972511A (en) 1964-10-14
BE595672A (fr) 1961-02-01
CH393543A (de) 1965-06-15
NL258408A (index.php)
DE1163981B (de) 1964-02-27
US3165811A (en) 1965-01-19

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